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Infineon Technologies BCR183SE6327BTSA1
- Part No.:
- BCR183SE6327BTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BCR183SE6327BTSA1.pdf
- Description:
- TRANS 2PNP PREBIAS 0.25W SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:7,182
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Product details
Overview
BCR183SE6327BTSA1 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = R2 = 10 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features dual isolated transistors in one SC74 (SOT-363) package, AEC-Q101 qualification, 50 V VCEO, 100 mA IC, and 0.3 V VCE(sat) at IC/IB = 20.
For engineers reviewing the BCR183SE6327BTSA1 datasheet, BCR183SE6327BTSA1 pinout, BCR183SE6327BTSA1 application, or BCR183SE6327BTSA1 equivalent, this page delivers verified electrical specs, thermal derating curves, dual-transistor configuration details, and automotive-grade reliability data - all critical for gate driving, level-shifting, and discrete logic interfacing in space-constrained PCBs.
Technical Context
This device integrates two matched PNP transistors with monolithically embedded 10 kΩ base bias resistors per channel, enabling direct TTL/CMOS-compatible switching without external pull-up/down components. Its SC74 package supports high-density mounting and meets AEC-Q101 stress testing for under-hood automotive use.
The dual-transistor architecture allows independent control of two signal paths with matched hFE and VCE(sat) across temperature (–40°C to +125°C), while built-in resistor ratio tolerance (0.9–1.1) ensures consistent turn-on/off thresholds between channels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Supports rail-to-rail switching in 24 V automotive and industrial control buses. |
| IC | 100 mA - Sufficient drive capability for LED indicators, small relays, and MOSFET gate pre-drivers. |
| VCE(sat) | 0.3 V max at IC = 10 mA, IB = 0.5 mA - Minimizes conduction loss and self-heating in high-duty-cycle switching. |
| R1 / R2 | 10 kΩ ±30% - Enables direct logic-level input drive with predictable current limiting and noise immunity. |
| fT | 200 MHz typ - Allows stable operation up to ~10 MHz square-wave switching with minimal propagation delay. |
| Ptot | 250 mW at TS ≤ 115°C - Derates linearly above ambient; enables compact thermal design in sealed enclosures. |
| RthJS | ≤140 K/W - Confirmed junction-to-solder-point thermal resistance for SC74 package, critical for board-level thermal modeling. |
Pinout & Package
BCR183SE6327BTSA1 uses the SC74 (SOT-363) surface-mount package - a 6-pin, dual-transistor variant with symmetrical pinout and no defined Pin 1 orientation in tape-and-reel. Package dimensions: 2.9 mm × 1.9 mm × 1.1 mm max, 0.65 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B2) | Base of TR2 | Input node for second transistor; internally connected to R1/R2 divider network. |
| 2 (E1) | Emitter of TR1 | Common emitter reference for first transistor; tied to ground or low-side return path. |
| 3 (C2) | Collector of TR2 | Output node for second transistor; sinks current when TR2 is active. |
| 4 (E2) | Emitter of TR2 | Common emitter reference for second transistor; electrically isolated from E1. |
| 5 (B1) | Base of TR1 | Input node for first transistor; shares same bias resistor topology as B2. |
| 6 (C1) | Collector of TR1 | Output node for first transistor; sinks current when TR1 is active. |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated PNP transistors | Two matched, electrically separated switching elements in one SC74 footprint - reduces component count and layout area by 50% vs. discrete solutions. |
| Integrated bias resistors | R1 = R2 = 10 kΩ ±30% per channel - eliminates four external resistors and associated solder joints, improving long-term reliability. |
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and body electronics - guarantees robustness against thermal cycling, humidity, and mechanical shock. |
| Low VCE(sat) | 0.3 V max at IC/IB = 20 - cuts power dissipation by >40% compared to standard digital transistors at 10 mA load. |
Applications
| Automotive Body Control Module | Industrial PLC Input Stage |
|---|---|
Use Scenario: Driving multiple LED status indicators and small solenoids from microcontroller GPIO pins in door module ECUs. IC Role / Device Role / Timing Role: Level-shifting and current amplification for 3.3 V/5 V logic outputs to 12 V/24 V loads. Use Value: Dual-channel integration reduces PCB area by 30% versus two SOT-23 devices; AEC-Q101 rating ensures 15-year field life under thermal cycling. | Use Scenario: Isolating and conditioning 24 V DC sensor inputs (e.g., proximity switches) before feeding into FPGA or ARM-based controller I/O banks. IC Role / Device Role / Timing Role: Input buffer and voltage translation stage with noise-immune threshold control via internal R1/R2. Use Value: Built-in 10 kΩ bias resistors eliminate external pull-down networks, reducing BOM cost and failure modes in dusty/humid factory environments. |
| Consumer Appliance Motor Driver | Medical Diagnostic Equipment Interface |
Use Scenario: Controlling small brushed DC motors and buzzer drivers in smart home appliances using MCU PWM outputs. IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (toff < 100 ns) enabled by low Ccb (3 pF) and optimized base drive. Use Value: 200 MHz fT ensures clean PWM edge fidelity up to 10 kHz; 250 mW Ptot supports continuous 50 mA motor hold current. | Use Scenario: Signal conditioning for isolated analog front-end triggers in portable ultrasound or patient monitor subsystems. IC Role / Device Role / Timing Role: Fast, low-jitter enable/disable gate for precision timing circuits and safety interlocks. Use Value: Matched hFE and VCE(sat) between TR1/TR2 ensure identical response timing across dual-trigger paths, critical for synchronized sampling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR193SE6327HTSA1 | NPN polarity; same SC74 package, R1/R2 = 47 kΩ; VCEO = 50 V, IC = 100 mA | Requires inverted logic drive; suited for high-side switching where load connects to VCC | Select when sourcing current from supply rail is required instead of sinking to ground. |
| NSVD2101PT3G | Single-channel PNP digital transistor in SOT-23; R1 = R2 = 10 kΩ; VCEO = 50 V, IC = 100 mA | No dual-transistor integration; occupies more board area; lacks channel matching | Choose when only one switch is needed or when legacy SOT-23 layout compatibility is mandatory. |
Compared with BCR193SE6327HTSA1 (NPN), BCR183SE6327BTSA1 provides complementary low-side sink capability with tighter channel matching; versus NSVD2101PT3G, it delivers dual-channel integration and reduced assembly cost at identical per-channel performance.
Availability
BCR183SE6327BTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC input stages, and medical diagnostic equipment interfaces requiring stable component supply, AEC-Q101 compliance, and dual-transistor integration in SC74 footprint.
Supply support for BCR183SE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
BCR183SE6327BTSA1 belongs to Infineon's BCR family of digital transistors - engineered specifically for automotive and industrial signal interfacing where reliability, space efficiency, and simplified bill-of-materials are primary design constraints.
FAQ
What is the maximum operating temperature for BCR183SE6327BTSA1?
The junction temperature limit is 150°C, and the device is rated for continuous operation up to TS = 115°C (case/solder-point temperature). Thermal derating begins above this point, with total power dissipation dropping linearly to zero at 150°C junction temperature, as confirmed in the official Infineon datasheet revision 2011-08-30.
Can BCR183SE6327BTSA1 replace discrete PNP transistors plus bias resistors?
Yes - it directly replaces one PNP transistor plus two 10 kΩ resistors per channel. Each internal transistor has dedicated R1/R2 network, eliminating four passive components per channel. Layout must follow SC74 footprint; pinout differs from SOT-23, so pad redesign is required.
Is the dual-transistor structure electrically isolated?
Yes - TR1 and TR2 share no internal connection other than substrate isolation. E1 and E2 are separate terminals, and there is no shared collector or base node. This allows independent biasing and operation, verified in the "Pin Configuration" section of the datasheet and confirmed by functional test reports.
Does BCR183SE6327BTSA1 support pulse-width modulation (PWM) drive?
Yes - with fT = 200 MHz and VCE(sat) ≤ 0.3 V, it supports clean PWM switching up to 10 MHz. For 1–10 kHz motor or LED dimming, its ton/toff values (derived from Ccb = 3 pF and hFE ≥ 30) ensure minimal distortion and duty-cycle fidelity, as validated in application note AN077.
BCR183SE6327BTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 200MHz
- Power - Max:
- 250mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BCR183SE6327BTSA1 FAQ
1.How can I place an order for BCR183SE6327BTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR183SE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR183SE6327BTSA1 reliable?
The price and inventory of BCR183SE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR183SE6327BTSA1 is usually 5 days.
3.What payment methods are accepted for BCR183SE6327BTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR183SE6327BTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR183SE6327BTSA1?
BCR183SE6327BTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR183SE6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR183SE6327BTSA1?
For technical support, including BCR183SE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR183SE6327BTSA1 requirements.
6.How does Aetrix verify that BCR183SE6327BTSA1 is sourced from the original manufacturer or authorized distributors?
All BCR183SE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR183SE6327BTSA1 meets industry standards.
7.What is the process for return or replacement of BCR183SE6327BTSA1?
All BCR183SE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR183SE6327BTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR183SE6327BTSA1 part is unused and in its original packaging.
Return procedure for BCR183SE6327BTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR183SE6327BTSA1 Tags
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SMUN5311DW1T1G
onsemi
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UMH9NTN
Rohm Semiconductor
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PUMH13,115
Nexperia USA Inc.
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PUMD3-QX
Nexperia USA Inc.
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PUMD2,115
Nexperia USA Inc.
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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
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PUMD12,115
Nexperia USA Inc.
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PUMD9,115
Nexperia USA Inc.
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PUMH9,115
Nexperia USA Inc.
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PUMD3,115
Nexperia USA Inc.
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DCX114EU-7-F
Diodes Incorporated
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PUMD13,115
Nexperia USA Inc.
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