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Infineon Technologies BCR183SE6433BTMA1
- Part No.:
- BCR183SE6433BTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BCR183SE6433BTMA1.pdf
- Description:
- TRANS 2PNP PREBIAS 0.25W SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:3,131
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Product details
Overview
BCR183SE6433BTMA1 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = R2 = 10 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features dual isolated transistors in one SC74 (SOT-363) package, AEC-Q101 qualification, 50 V VCEO, 100 mA IC, and 250 mW Ptot at TS ≤ 115°C.
For engineers reviewing the BCR183SE6433BTMA1 datasheet, BCR183SE6433BTMA1 pinout, BCR183SE6433BTMA1 application, or BCR183SE6433BTMA1 equivalent, key selection criteria include built-in resistor matching (R1/R2 = 0.9–1.1), low VCE(sat) (≤0.3 V @ IC = 10 mA, IB = 0.5 mA), thermal resistance RthJS ≤ 140 K/W, and RoHS-compliant Pb-free packaging.
Technical Context
This device integrates two matched PNP transistors with monolithically embedded base-emitter resistors-R1 and R2-enabling direct logic-level interfacing without external bias components. Its dual-transistor topology supports complementary switching or differential signal conditioning in compact space-constrained designs.
The SC74 package provides six terminals with isolated emitter-collector paths per transistor (TR1: E1/B1/C1; TR2: E2/B2/C2), supporting independent control of each channel. Thermal performance is optimized for surface-mount operation up to 115°C case temperature, with junction-to-solder-point thermal resistance rated at ≤140 K/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V automotive supply rails with margin. |
| IC | 100 mA - Continuous collector current rating; suitable for driving LEDs, small relays, or logic buffers. |
| VCE(sat) | ≤0.3 V @ IC=10 mA, IB=0.5 mA - Low saturation voltage minimizes power loss and self-heating in switching mode. |
| R1 / R2 | 10 kΩ ±30% - Integrated bias resistors eliminate external components and ensure consistent turn-on behavior across temperature. |
| R1/R2 ratio | 0.9–1.1 - Tight resistor matching enables balanced current sharing and stable dual-transistor operation. |
| fT | 200 MHz typ. - Sufficient gain-bandwidth for high-speed digital switching up to ~10 MHz edge rates. |
| RthJS | ≤140 K/W - Junction-to-solder-point thermal resistance supports reliable operation at 115°C case temperature. |
Pinout & Package
BCR183SE6433BTMA1 uses the SC74 (SOT-363) package: 6-pin, surface-mount, dual-transistor layout with internal isolation between TR1 and TR2. Pin 1 = E1, Pin 2 = B1, Pin 3 = C2, Pin 4 = E2, Pin 5 = B2, Pin 6 = C1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | Emitter of TR1 | Common reference node for first transistor; tied to ground or low-side return path in switch configuration. |
| 2 (B1) | Base of TR1 | Control input for TR1; driven through internal R1 resistor from external signal source. |
| 3 (C2) | Collector of TR2 | Output node for second transistor; connects to load or next-stage input in push-pull or differential pair setups. |
| 4 (E2) | Emitter of TR2 | Reference node for TR2; electrically isolated from E1 to support independent biasing or floating configurations. |
| 5 (B2) | Base of TR2 | Control input for TR2; biased via internal R2, enabling synchronous or complementary switching with TR1. |
| 6 (C1) | Collector of TR1 | Primary output node for TR1; used for load switching, level translation, or active pull-down functions. |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated PNP transistors | Two thermally and electrically independent switching elements in one SC74 footprint-reduces board area by ~40% vs. discrete solutions. |
| Matched on-chip bias resistors | R1 = R2 = 10 kΩ ±30%, ratio tolerance 0.9–1.1-ensures consistent DC operating points across temperature and process variation. |
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and body electronics-supports 15-year lifecycle reliability requirements. |
| Low VCE(sat) | ≤0.3 V at IC/IB = 20-reduces conduction loss to <1.5 mW at 5 mA load current, improving efficiency in battery-powered systems. |
| Pb-free & RoHS compliant | Meets EU Directive 2011/65/EU-enables use in consumer, industrial, and automotive markets without hazardous substance restrictions. |
Applications
| Automotive Door Module Switching | Industrial PLC Input Buffer |
|---|---|
Use Scenario: Controlling window lift motors and mirror actuators in door control units using 12 V supply rails. IC Role / Device Role / Timing Role: Digital switch driving MOSFET gate or relay coil; operates as level-shifting inverter between microcontroller GPIO and load. Use Value: Built-in R1/R2 eliminates 4 external resistors per channel, reducing BOM count and PCB footprint while maintaining AEC-Q101 compliance. | Use Scenario: Isolating and conditioning 24 V DC field signals into 3.3 V logic levels for PLC main controller inputs. IC Role / Device Role / Timing Role: Interface circuit converting industrial voltage levels to safe MCU-compatible signals with noise immunity. Use Value: Dual-transistor structure allows simultaneous buffering of two independent input channels in same footprint, cutting layout complexity. |
| LED Driver for Dashboard Backlight | Smart Sensor Signal Conditioning |
Use Scenario: Driving segmented LED backlight arrays in automotive instrument clusters requiring precise current control. IC Role / Device Role / Timing Role: Constant-current sink switch regulating LED brightness via PWM-controlled base drive. Use Value: Low VCE(sat) ensures minimal voltage drop across transistor, preserving headroom for LED forward voltage and improving dimming linearity. | Use Scenario: Amplifying and inverting analog sensor outputs (e.g., pressure or temperature) before ADC sampling in embedded sensor nodes. IC Role / Device Role / Timing Role: Inverter stage providing signal polarity correction and gain staging prior to digitization. Use Value: Matched hFE and R1/R2 across TR1/TR2 enables differential amplification with <0.5% gain mismatch over –40°C to +125°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR183WE6327HTSA1 | Same dual-PNP topology but in SOT-323 (SC-70) package; R1/R2 = 10 kΩ, RthJS ≤ 105 K/W, Ptot = 250 mW @ TS ≤ 124°C. | Higher thermal capability suits higher ambient environments (e.g., under-hood); smaller footprint limits routing flexibility. | Select when board space is critical and thermal management allows tighter layout. |
| BC847BPDW1T1G | PNP+NPN matched pair in SOT-363; no integrated bias resistors; hFE = 200–450; requires external base resistors. | Supports complementary switching topologies (e.g., push-pull drivers); lacks built-in biasing for simple logic interfacing. | Select when bidirectional drive or higher gain is required, and external bias design is acceptable. |
Compared with BCR183SE6433BTMA1, the BCR183WE6327HTSA1 offers better thermal performance in a smaller package but less accessible trace routing, while the BC847BPDW1T1G enables complementary operation at the cost of added external components and reduced integration.
Availability
BCR183SE6433BTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial programmable logic controllers, and smart sensor interface designs requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for BCR183SE6433BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.
BCR183SE6433BTMA1 belongs to Infineon's BCR family of digital transistors-engineered for simplified logic interfacing and robust switching in harsh-environment applications such as automotive ECUs and industrial automation.
FAQ
What is the maximum operating temperature for BCR183SE6433BTMA1?
The device is rated for junction temperature up to 150°C and case temperature up to 115°C. At TS = 115°C, total power dissipation is derated to 250 mW. Thermal resistance from junction to solder point is ≤140 K/W, enabling reliable operation in automotive cabin and under-dash environments.
Does BCR183SE6433BTMA1 require external base resistors?
No. It integrates two precision-matched bias resistors (R1 = R2 = 10 kΩ) internally-one per transistor-eliminating the need for external base resistors in standard switching and inverting configurations. This simplifies PCB layout and improves consistency across production batches.
How is pin 1 identified on the SC74 package?
Pin 1 is marked by a dot or notch on the top surface of the SC74 (SOT-363) package, located adjacent to the leadframe corner nearest the marking side. The pinout follows standard orientation: looking at the top marking side with pins facing down, pin 1 is bottom-left, progressing counter-clockwise as E1–B1–C2–E2–B2–C1.
Is BCR183SE6433BTMA1 suitable for PWM-driven loads?
Yes. With fT = 200 MHz typ. and VCE(sat) ≤ 0.3 V, it supports PWM frequencies up to several MHz for LED dimming or motor control. Pulse load capability is validated per JEDEC standards, with permissible peak power up to 3× DC rating for pulse widths <100 µs and duty cycle <2%.
BCR183SE6433BTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 10kOhms
- Resistor - Emitter Base (R2):
- 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 200MHz
- Power - Max:
- 250mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BCR183SE6433BTMA1 FAQ
1.How can I place an order for BCR183SE6433BTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR183SE6433BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR183SE6433BTMA1 reliable?
The price and inventory of BCR183SE6433BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR183SE6433BTMA1 is usually 5 days.
3.What payment methods are accepted for BCR183SE6433BTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR183SE6433BTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR183SE6433BTMA1?
BCR183SE6433BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR183SE6433BTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR183SE6433BTMA1?
For technical support, including BCR183SE6433BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR183SE6433BTMA1 requirements.
6.How does Aetrix verify that BCR183SE6433BTMA1 is sourced from the original manufacturer or authorized distributors?
All BCR183SE6433BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR183SE6433BTMA1 meets industry standards.
7.What is the process for return or replacement of BCR183SE6433BTMA1?
All BCR183SE6433BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR183SE6433BTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR183SE6433BTMA1 part is unused and in its original packaging.
Return procedure for BCR183SE6433BTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR183SE6433BTMA1 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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