Infineon Technologies BCR183SH6327XTSA1

Overview

BCR183SH6327XTSA1 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = R2 = 10 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control systems. It features dual isolated transistors in one SC74 (SOT-363) package, AEC-Q101 qualification, 50 V V_CEO, 100 mA I_C, and 0.3 V V_CE(sat) at I_C/I_B = 20.

For engineers reviewing the BCR183SH6327XTSA1 datasheet, BCR183SH6327XTSA1 pinout, BCR183SH6327XTSA1 application, or BCR183SH6327XTSA1 equivalent, this page delivers verified electrical specs, thermal derating curves, dual-transistor configuration details, and automotive-grade reliability data essential for signal-level logic interfacing and load switching design.

Technical Context

This device integrates two matched PNP transistors with monolithically embedded base-emitter bias resistors (R1 = R2 = 10 kΩ ±30%), enabling direct TTL/CMOS-compatible logic-level drive without external components. Its dual-die SC74 package ensures tight parameter matching across temperature (–40°C to 125°C) and supports high-density PCB layouts.

The transistor operates in common-emitter switching mode with guaranteed V_CE(sat) ≤ 0.3 V at I_C = 10 mA / I_B = 0.5 mA, and exhibits f_T ≥ 200 MHz for fast edge response in digital signal routing. Thermal resistance R_thJS is 133 K/W, supporting continuous operation up to T_S = 118°C.

Key Specifications

Pinout & Package

BCR183SH6327XTSA1 uses the SC74 (SOT-363) surface-mount package: 6-pin, 2.9 mm × 1.9 mm footprint, 1.1 mm max height, RoHS-compliant, tape-and-reel packaging (3,000 pcs/reel, ø180 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP digital transistor applications.

Compared with BCR193SH6327XTSA1 and NSVDU2D12PZT2G, BCR183SH6327XTSA1 uniquely delivers dual PNP switching in one AEC-Q101-qualified SC74 package-reducing component count, interconnect parasitics, and thermal mismatch in safety-critical automotive and industrial interfaces.

Availability

BCR183SH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial programmable logic controllers, and medical diagnostic equipment requiring stable component supply and long-term lifecycle support.

Supply support for BCR183SH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BCR183SH6327XTSA1 belongs to Infineon's BCR family of digital transistors-engineered specifically for automotive-grade logic interfacing, replacing discrete BJT-resistor combinations in ECU, lighting, and sensor interface subsystems.

FAQ

What is the maximum operating junction temperature for BCR183SH6327XTSA1?

The absolute maximum junction temperature (T_j) is 150°C, validated per AEC-Q101 stress testing. Derated power dissipation begins at T_S = 118°C, where P_tot drops linearly to 0 mW at 150°C. This allows sustained operation in under-hood environments up to 125°C ambient when mounted on 2-layer FR4 with 1 cm² copper pour.

Can BCR183SH6327XTSA1 replace discrete PNP transistors and resistors in existing designs?

Yes-its pin-compatible SC74 footprint and integrated 10 kΩ bias resistors allow drop-in replacement of two discrete PNP BJTs plus four resistors. Layout changes are limited to removing passive components; no logic inversion or timing adjustment is required due to matched h_FE and V_CE(sat) across both channels.

Is the R1/R2 ratio tightly controlled, and why does it matter?

R1/R2 is specified 0.9–1.1 (±10%), ensuring balanced base current division between the two transistors. This tight ratio minimizes gain mismatch and output timing skew in dual-channel applications such as differential line drivers or redundant signal paths in functional safety systems.

Does BCR183SH6327XTSA1 support pulsed operation beyond its DC power rating?

Yes-pulse derating curves show P_tot(max)/P_tot(DC) reaches 10× for t_p < 10 µs at D = 0. Pulse thermal resistance R_thJS drops to ≤10 K/W under short pulses, enabling peak currents up to 500 mA for brief actuation events like relay coil energization without exceeding T_j limits.