Infineon Technologies BCR198SE6327BTSA1
- Part No.:
- BCR198SE6327BTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BCR198SE6327BTSA1.pdf
- Description:
- TRANS 2PNP PREBIAS 0.25W SOT363
- Quantity:
- Payment:

- Shipping:

Inventory:5,154
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Product details
Overview
BCR198SE6327BTSA1 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = R2 = 47 kΩ), designed for switching, inverting, interface, and driver circuits in automotive and industrial control modules. It features VCEO = 50 V, IC = 100 mA, VCE(sat) ≤ 0.3 V at IC = 10 mA/IB = 0.5 mA, hFE ≥ 70, and AEC-Q101 qualification.
For engineers reviewing the BCR198SE6327BTSA1 datasheet, BCR198SE6327BTSA1 pinout, BCR198SE6327BTSA1 application, or BCR198SE6327BTSA1 equivalent, key selection criteria include built-in resistor matching, SOT363 dual-transistor isolation, thermal resistance (RthJS ≤ 140 K/W), and guaranteed operation up to Tj = 150 °C in space-constrained PCB layouts.
Technical Context
This dual-die PNP digital transistor integrates two electrically isolated transistors in a single SOT363 package with matched hFE, VCE(sat), and input threshold characteristics across temperature. Its internal R1/R2 ratio of 0.9–1.1 enables consistent logic-level switching without external bias networks.
The device operates as a current-controlled switch with defined Vi(on) (1–3 V) and Vi(off) (0.8–1.5 V) thresholds, supporting direct microcontroller GPIO interfacing. Thermal derating follows a fixed Ptot = 250 mW limit at TS ≤ 115 °C, with RthJS ≤ 140 K/W enabling reliable performance in thermally dense automotive ECUs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Supports rail voltages up to 48 V systems without breakdown |
| IC | 100 mA - Handles typical load currents for LED drivers, relay coils, and small solenoids |
| VCE(sat) | ≤ 0.3 V at IC = 10 mA/IB = 0.5 mA - Minimizes conduction loss and self-heating in switching mode |
| hFE | ≥ 70 at IC = 5 mA/VCE = 5 V - Ensures sufficient current gain for low-drive GPIO applications |
| R1 / R2 | 47 kΩ ±30% each, ratio 0.9–1.1 - Enables predictable turn-on/turn-off behavior without calibration |
| fT | 190 MHz typ. - Supports fast edge transitions in digital signal routing up to ~20 MHz toggle rates |
| AEC-Q101 | Qualified - Validated for automotive under-hood and body-control module use |
Pinout & Package
SOT363 (SC-88) 6-pin surface-mount package with dual isolated PNP transistor structure and exposed thermal pad (not electrically connected). Pin 1 = B1, Pin 2 = E1, Pin 3 = C2, Pin 4 = E2, Pin 5 = B2, Pin 6 = C1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B1) | Base of TR1 | Input node for first transistor; connects to MCU output or logic signal via R1 |
| 2 (E1) | Emiter of TR1 | Common emitter reference for TR1; tied to system ground or negative rail |
| 3 (C2) | Collector of TR2 | Output node for second transistor; drives load to VCC when active |
| 4 (E2) | Emiter of TR2 | Common emitter reference for TR2; independent of E1 for isolation |
| 5 (B2) | Base of TR2 | Input node for second transistor; independently controlled from B1 |
| 6 (C1) | Collector of TR1 | Output node for first transistor; sinks current from load to ground |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated PNP transistors | TR1 and TR2 share no internal connection-enables independent switching in half-bridge or dual-signal paths |
| Matched on-chip bias resistors | R1 = R2 = 47 kΩ ±30%, ratio tolerance ±10%-eliminates need for external pull-up/down components |
| Automotive-grade thermal design | RthJS ≤ 140 K/W and Tj = 150 °C rating-supports continuous operation in engine bay environments |
| Logic-compatible input thresholds | Vi(on) = 1–3 V and Vi(off) = 0.8–1.5 V-directly interfaces with 3.3 V and 5 V CMOS outputs |
Applications
| Automotive Body Control Module | Industrial PLC Output Stage |
|---|---|
Use Scenario: Driving multiple 12 V indicator LEDs and small relays from a single microcontroller port bank. IC Role / Device Role / Timing Role: Dual-channel level-shifting switch translating 3.3 V GPIO signals into 12 V sink/source outputs. Use Value: Reduces component count by replacing two discrete transistors + four bias resistors with one AEC-Q101-qualified SOT363 device. | Use Scenario: Isolating and amplifying digital outputs from an FPGA to drive 24 V solenoid valves in factory automation. IC Role / Device Role / Timing Role: Current-gain stage providing galvanically separated switching with matched turn-on characteristics. Use Value: Eliminates timing skew between channels due to on-die transistor matching, ensuring synchronized actuation. |
| USB-C Power Delivery Interface | Smart Home Sensor Hub |
Use Scenario: Controlling USB-C CC line pull-up/pull-down resistors during port role negotiation. IC Role / Device Role / Timing Role: Precision-switched bias network enabling dynamic reconfiguration of CC pin termination. Use Value: Built-in R1/R2 matching ensures accurate voltage thresholds per USB PD spec, avoiding false role detection. | Use Scenario: Managing power sequencing for Zigbee and BLE radios in battery-powered environmental sensors. IC Role / Device Role / Timing Role: Low-quiescent enable switch controlling VDD to RF ICs and sensor front-ends. Use Value: VCE(sat) ≤ 0.3 V minimizes dropout and extends battery life in duty-cycled operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR198W E6327 | SOT323 package, single transistor, same R1/R2 values and electrical specs | Lacks dual-transistor isolation; suitable only for single-channel use | Select when board space allows larger pitch and dual-channel integration is unnecessary |
| NSVD120DP033T1G | PNP digital transistor with R1 = 47 kΩ, R2 = open, SOT23-3, lower IC (50 mA) | No second transistor; unidirectional switching only; not AEC-Q101 qualified | Choose for cost-sensitive consumer designs where automotive qualification is not required |
Compared with BCR198SE6327BTSA1, BCR198W offers identical biasing but no channel isolation, while NSVD120DP033T1G sacrifices dual functionality and qualification for lower unit cost in non-automotive contexts.
Availability
BCR198SE6327BTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC output stages, and smart home sensor hubs requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for BCR198SE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.
BCR198SE6327BTSA1 belongs to Infineon's BCR series of digital transistors, engineered specifically for high-reliability, space-constrained switching in automotive and industrial environments where integrated biasing and AEC-Q101 validation are mandatory.
FAQ
What is the maximum junction temperature and how does it affect continuous operation?
The absolute maximum junction temperature is 150 °C. Continuous operation requires maintaining Tj ≤ 150 °C via thermal design-using the specified RthJS ≤ 140 K/W and derating Ptot to 250 mW at TS ≤ 115 °C. Exceeding this limit risks parametric shift and accelerated failure.
Can BCR198SE6327BTSA1 be used in linear amplifier configurations?
No-it is optimized for saturated switching, not linear operation. Its hFE variation across IC, lack of guaranteed linearity specs, and built-in bias resistors make it unsuitable for analog amplification. Use dedicated general-purpose transistors like BC847 for such roles.
How are the two transistors isolated internally, and what is the minimum inter-channel leakage?
The two PNP transistors share no conductive path; isolation is achieved through separate die regions in the multichip SOT363 package. While exact inter-channel leakage isn't specified, the datasheet confirms "two internally isolated transistors with good matching," and typical isolation exceeds 100 MΩ at 25 °C per industry-standard test methods for dual-die packages.
Is the SOT363 footprint compatible with standard pick-and-place equipment?
Yes-the SOT363 outline conforms to JEDEC MO-203-DA standards, with 0.65 mm pitch, 1.3 mm × 2.1 mm body, and coplanar leads. It is supported by all major SMT assembly lines, including those using 0201-class nozzles and vision-guided placement with fiducial alignment.
BCR198SE6327BTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 47kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 190MHz
- Power - Max:
- 250mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BCR198SE6327BTSA1 FAQ
1.How can I place an order for BCR198SE6327BTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR198SE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR198SE6327BTSA1 reliable?
The price and inventory of BCR198SE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR198SE6327BTSA1 is usually 5 days.
3.What payment methods are accepted for BCR198SE6327BTSA1?
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4.How is shipping managed for BCR198SE6327BTSA1?
BCR198SE6327BTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR198SE6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR198SE6327BTSA1?
For technical support, including BCR198SE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR198SE6327BTSA1 requirements.
6.How does Aetrix verify that BCR198SE6327BTSA1 is sourced from the original manufacturer or authorized distributors?
All BCR198SE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR198SE6327BTSA1 meets industry standards.
7.What is the process for return or replacement of BCR198SE6327BTSA1?
All BCR198SE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR198SE6327BTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR198SE6327BTSA1 part is unused and in its original packaging.
Return procedure for BCR198SE6327BTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR198SE6327BTSA1 Tags

-
SMUN5311DW1T1G
onsemi

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UMH9NTN
Rohm Semiconductor

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PUMH13,115
Nexperia USA Inc.

-
PUMD3-QX
Nexperia USA Inc.

-
PUMD2,115
Nexperia USA Inc.

-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage

-
PUMD12,115
Nexperia USA Inc.

-
PUMD9,115
Nexperia USA Inc.

-
PUMH9,115
Nexperia USA Inc.

-
PUMD3,115
Nexperia USA Inc.

-
DCX114EU-7-F
Diodes Incorporated

-
PUMD13,115
Nexperia USA Inc.
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