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Infineon Technologies BCR198SH6827XTSA1
- Part No.:
- BCR198SH6827XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar Transistor Arrays, Pre-Biased
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BCR198SH6827XTSA1.pdf
- Description:
- TRANS 2PNP PREBIAS 0.25W SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:5,071
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Product details
Overview
BCR198SH6827XTSA1 from Infineon Technologies is a PNP silicon digital transistor with integrated bias resistors (R1 = R2 = 47 kΩ), designed for switching, inverting, interfacing, and driver circuits in automotive and industrial control systems. It features VCEO = 50 V, IC = 100 mA, VCE(sat) ≤ 0.3 V at IC = 10 mA/IB = 0.5 mA, hFE ≥ 70, and AEC-Q101 qualification.
For engineers reviewing the BCR198SH6827XTSA1 datasheet, BCR198SH6827XTSA1 pinout, BCR198SH6827XTSA1 application, or BCR198SH6827XTSA1 equivalent, this part supports compact logic-level interface design with built-in resistor matching, thermal derating up to 115°C case temperature, and SOT363 packaging for space-constrained PCB layouts.
Technical Context
This dual-transistor device integrates two electrically isolated PNP transistors in a single SOT363 package with matched characteristics-enabling differential signaling, push-pull output stages, or redundant switching paths. Its internal R1/R2 ratio of 0.9–1.1 ensures consistent turn-on/off thresholds across both elements under varying temperature conditions.
The device operates with a maximum junction temperature of 150°C and thermal resistance RthJS ≤ 140 K/W, supporting stable performance in thermally demanding environments such as engine control units and power supply sequencers where discrete bias networks would otherwise increase layout complexity and component count.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Supports rail-to-rail switching in 24 V automotive systems without breakdown risk. |
| IC | 100 mA - Sufficient drive capability for LED indicators, small relays, and gate drivers. |
| VCE(sat) | ≤ 0.3 V @ 10 mA/0.5 mA - Minimizes conduction loss and self-heating in high-duty-cycle applications. |
| hFE | ≥ 70 @ 5 mA/5 V - Ensures reliable saturation with low base drive current, reducing MCU GPIO loading. |
| R1 / R2 | 47 kΩ ±30% - Integrated bias network eliminates external resistors, saving board area and assembly cost. |
| fT | 190 MHz - Enables fast edge response in pulse-width modulation and signal conditioning circuits. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness. |
Pinout & Package
SOT363 (SC-88) surface-mount package with 6-pin configuration and lead pitch of 0.65 mm; moisture sensitivity level MSL3 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 = B1 | Base of Transistor 1 | Input node for first PNP switch; connected internally to R1 and R2 network. |
| 2 = E1 | Emiter of Transistor 1 | Common emitter connection point; referenced to system ground or negative rail. |
| 3 = C2 | Collector of Transistor 2 | Output node for second transistor; used in complementary or mirrored configurations. |
| 4 = E2 | Emiter of Transistor 2 | Second emitter terminal; electrically isolated from E1 but co-packaged. |
| 5 = B2 | Base of Transistor 2 | Independent input for second transistor; enables dual-channel control from one footprint. |
| 6 = C1 | Collector of Transistor 1 | Main output path for TR1; routed to load or next stage with minimal parasitic inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated PNP transistors | Two matched devices in one SOT363 package reduce footprint by ~40% vs. discrete solutions. |
| Integrated bias resistors | R1 = R2 = 47 kΩ ±30% eliminates need for external pull-up/down components and associated layout routing. |
| AEC-Q101 qualification | Validated for automotive applications including under-hood ECUs and body control modules. |
| Thermal derating support | Ptot = 250 mW up to TS = 115°C enables operation in sealed enclosures without forced cooling. |
| RoHS-compliant packaging | Pb-free terminations and halogen-free molding compound meet EU Directive 2011/65/EU requirements. |
Applications
| Automotive Door Module | Industrial PLC Output Stage |
|---|---|
Use Scenario: Driving window lift motor direction control logic and mirror adjustment switches. IC Role / Device Role / Timing Role: Dual PNP switch providing active-low enable signals to H-bridge drivers while sharing common ground reference. Use Value: Matched hFE and VCE(sat) ensure symmetrical timing between up/down commands, preventing mechanical jerk or stall. | Use Scenario: Isolating microcontroller GPIOs from 24 V DC solenoid loads in factory automation I/O cards. IC Role / Device Role / Timing Role: Level-shifting interface that converts 3.3 V logic to 24 V sink outputs with integrated base biasing. Use Value: Eliminates four external resistors per channel, reducing BOM count and improving long-term reliability over discrete resistor-transistor combinations. |
| LED Status Indicator Array | Power Supply Sequencing Control |
Use Scenario: Driving multiple panel-mounted LEDs in medical diagnostic equipment with shared cathode return. IC Role / Device Role / Timing Role: High-side switch array enabling simultaneous on/off control of grouped indicators via MCU-controlled bases. Use Value: Low VCE(sat) minimizes voltage drop across each LED string, preserving brightness consistency across all channels. | Use Scenario: Enabling/disabling auxiliary rails (e.g., 5 V, 3.3 V, 1.8 V) in multi-rail DC/DC converters during startup/shutdown sequences. IC Role / Device Role / Timing Role: Precision-controlled enable gate for PMOS pass transistors, using matched turn-on thresholds to synchronize ramp timing. Use Value: Tight R1/R2 ratio (0.9–1.1) ensures <±5% variation in enable delay between parallel sequencing paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCR198WH6327XTSA1 | SOT323 package; lower Ptot = 250 mW at TS ≤ 124°C; same R1/R2 values and electrical specs. | Better suited for single-transistor use cases requiring smaller footprint and higher thermal limit. | Select when only one transistor is needed and board space is extremely constrained. |
| BC857B,215 | Standard PNP BJT without integrated resistors; hFE = 200–450; requires external base bias network. | Offers higher gain and wider VCE range but increases component count and layout complexity. | Choose when precise gain control or adjustable biasing is required beyond fixed-resistor topology. |
Compared with BCR198WH6327XTSA1, the BCR198SH6827XTSA1 provides dual-transistor integration in SOT363, enabling matched switching without inter-device skew; versus BC857B,215, it trades off external flexibility for reduced BOM and improved production repeatability in volume automotive designs.
Availability
BCR198SH6827XTSA1 is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC output stages, LED status indicator arrays, and power supply sequencing control requiring stable component supply and AEC-Q101 compliance.
Supply support for BCR198SH6827XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.
The BCR198S series belongs to Infineon's digital transistor product line, engineered specifically for automotive and industrial interface applications where integrated biasing, matched dual-element performance, and AEC-Q101 reliability are mandatory.
FAQ
What is the maximum allowable continuous collector current for BCR198SH6827XTSA1?
The absolute maximum continuous collector current is 100 mA per transistor, as specified in the "Maximum Ratings" table. This rating assumes case temperature does not exceed 115°C and derating follows the Ptot vs. TS curve shown in datasheet Figure 5. Exceeding this value risks thermal runaway or permanent degradation of hFE.
Can BCR198SH6827XTSA1 be used in linear amplifier configurations?
No - this device is optimized for switching operation with integrated bias resistors and lacks the linearity, gain stability, and frequency compensation required for analog amplification. Its hFE variation across IC and temperature (Figure 4) and fixed R1/R2 network make it unsuitable for Class-A or AB amplifier topologies.
Is the SOT363 package compatible with standard reflow profiles for lead-free assembly?
Yes - the SOT363 package uses Pb-free terminations and complies with JEDEC J-STD-020D moisture sensitivity level MSL3. Standard lead-free reflow profiles with peak temperatures up to 260°C and time above liquidus (TAL) ≤ 60 seconds are supported, provided floor life is observed after dry pack opening.
How does the R1/R2 ratio tolerance affect switching threshold consistency between the two transistors?
The R1/R2 ratio is guaranteed between 0.9 and 1.1, meaning base voltage thresholds differ by ≤ ±10% across TR1 and TR2. This ensures synchronized turn-on behavior in differential or mirrored configurations, critical for minimizing shoot-through in half-bridge drivers or timing skew in dual-channel sequencers.
BCR198SH6827XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Resistor - Base (R1):
- 47kOhms
- Resistor - Emitter Base (R2):
- 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- 190MHz
- Power - Max:
- 250mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BCR198SH6827XTSA1 FAQ
1.How can I place an order for BCR198SH6827XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCR198SH6827XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCR198SH6827XTSA1 reliable?
The price and inventory of BCR198SH6827XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCR198SH6827XTSA1 is usually 5 days.
3.What payment methods are accepted for BCR198SH6827XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCR198SH6827XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCR198SH6827XTSA1?
BCR198SH6827XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCR198SH6827XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCR198SH6827XTSA1?
For technical support, including BCR198SH6827XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCR198SH6827XTSA1 requirements.
6.How does Aetrix verify that BCR198SH6827XTSA1 is sourced from the original manufacturer or authorized distributors?
All BCR198SH6827XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCR198SH6827XTSA1 meets industry standards.
7.What is the process for return or replacement of BCR198SH6827XTSA1?
All BCR198SH6827XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCR198SH6827XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCR198SH6827XTSA1 part is unused and in its original packaging.
Return procedure for BCR198SH6827XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCR198SH6827XTSA1 Tags
-
SMUN5311DW1T1G
onsemi
-
UMH9NTN
Rohm Semiconductor
-
PUMH13,115
Nexperia USA Inc.
-
PUMD3-QX
Nexperia USA Inc.
-
PUMD2,115
Nexperia USA Inc.
-
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
-
PUMD12,115
Nexperia USA Inc.
-
PUMD9,115
Nexperia USA Inc.
-
PUMH9,115
Nexperia USA Inc.
-
PUMD3,115
Nexperia USA Inc.
-
DCX114EU-7-F
Diodes Incorporated
-
PUMD13,115
Nexperia USA Inc.
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