Infineon Technologies BF771E6765N

Overview

BF771E6765N from Infineon Technologies is an NPN silicon RF transistor designed for RF amplification and modulation stages in TV and VCR tuner front-ends. It features f_T = 6–8 GHz, V_CEO = 12 V, I_C = 80 mA, P_tot = 580 mW at T_S ≤ 69°C, and is qualified to AEC-Q101 for automotive-grade reliability.

For engineers reviewing the BF771E6765N datasheet, BF771E6765N pinout, BF771E6765N application in tuner IF/RF stages, or BF771E6765N equivalent for low-noise VHF/UHF amplification, this page delivers verified electrical specs, SOT23 package mapping, thermal resistance data, noise figure (F = 1 dB @ 900 MHz), and real-world substitution guidance.

Technical Context

This transistor operates in common-emitter configuration with emitter-grounded or base-grounded biasing for RF gain stages. Its f_T ≥ 6 GHz and low C_cb = 0.66 pF (typ.) support stable amplification up to 1.8 GHz, while G_ma = 15 dB @ 900 MHz and F = 1 dB enable high-sensitivity tuner front-end design.

Designed for pulsed DC operation (h_FE measured under pulse conditions), it delivers consistent h_FE = 70–140 at I_C = 30 mA / V_CE = 8 V. The SOT23 package enables compact layout with R_thJS ≤ 140 K/W, supporting thermal management in space-constrained tuner modules.

Key Specifications

Pinout & Package

Package: SOT23 - Surface-mount plastic package with gull-wing leads, 3-pin configuration, JEDEC TO-236AB compliant, footprint compatible with BCW66-type layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFP180, BF771E6765N offers lower cost and SOT23 compatibility but trades 1–2 dB noise and 1 GHz f_T; versus MMBT918, it delivers 8× higher f_T and 50% lower noise-making it the only viable choice for UHF tuner amplification.

Availability

BF771E6765N is available at Aetrix Electronics and suitable for TV tuner modules, automotive infotainment RF front-ends, and VCR RF modulator assemblies requiring stable component supply across long production lifecycles.

Supply support for BF771E6765N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D centers.

The BF771 belongs to Infineon's RF bipolar transistor product line, engineered specifically for high-linearity, low-noise amplification in consumer and automotive broadcast receiver applications.

FAQ

Is BF771E6765N suitable for 5G NR sub-6 GHz front-end designs?

No. While its f_T reaches 8 GHz, BF771E6765N lacks specified S-parameters, linearity (OIP3), and thermal derating data above 2 GHz required for 5G NR. Its characterization stops at 1.8 GHz, and G_ma drops to 10 dB at that frequency-insufficient for modern cellular PA driver requirements.

What is the recommended bias network for stable 900 MHz amplification?

Use a 10 kΩ base resistor from V_CC to pin 1, 100 Ω emitter degeneration resistor to ground (pin 2), and 100 nF RF bypass capacitor from emitter to ground. Collector (pin 3) connects to 50 Ω microstrip with series DC blocking capacitor; ensure ground vias within 2 mm of emitter pad.

Does BF771E6765N require external ESD protection in tuner PCB layout?

No additional external ESD protection is required beyond standard PCB handling precautions. The device itself is ESD-sensitive (HBM Class 1B per JESD22-A114), but its AEC-Q101 qualification includes on-chip ESD structures rated to ±2 kV HBM-sufficient for tuner module assembly when handled per JEDEC standards.

Can BF771E6765N replace BCW66 in existing designs?

Yes, with verification. Both use SOT23 and share pinout (B-E-C), but BF771E6765N has higher f_T (6–8 GHz vs. ~250 MHz), lower noise (1 dB vs. ~5 dB), and tighter h_FE spread (70–140 vs. 100–300). Layout is drop-in compatible, but bias networks may need adjustment for optimal noise/gain trade-off.