Infineon Technologies BF 775 E6327
- Part No.:
- BF 775 E6327
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar RF Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BF 775 E6327.pdf
- Description:
- RF TRANS NPN 15V 5GHZ SOT23-3
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BF775 E6327 from Infineon Technologies is an NPN silicon RF transistor in SOT23 package, rated for VCEO = 15 V, IC = 45 mA, fT = 3.5–5 GHz, and optimized for low-noise amplification in UHF TV-Sat tuners. It delivers 13 dB transducer gain at 900 MHz with 1.4 dB noise figure under 2 mA/6 V bias.
For engineers reviewing the BF775 E6327 datasheet, BF775 E6327 pinout, BF775 E6327 application in tuner front-ends, or BF775 E6327 equivalent for RF small-signal amplification, this page provides verified electrical parameters, thermal resistance (RthJS ≤ 365 K/W), junction temperature limit (150 °C), and RoHS-compliant SOT23 mechanical data.
Technical Context
This transistor operates as a high-frequency small-signal amplifier with DC current gain (hFE) of 70–140 at 15 mA/8 V. Its transition frequency (fT) exceeds 3.5 GHz, enabling stable gain up to 1.8 GHz where |S21|² remains ≥7.5 dB into 50 Ω.
Capacitance values are tightly specified: Ccb = 0.39–0.55 pF, Cce = 0.23 pF (typ), and Ceb = 0.64 pF (typ) at 1 MHz, supporting impedance matching in 450–2150 MHz tuner IF/RF stages. ESD sensitivity requires handling per AEC-Q101 Class 1B protocols.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 15 V - Maximum collector-emitter voltage before breakdown; sets safe operating range in tuner LNA bias networks. |
| fT | 3.5–5 GHz - Transition frequency defines usable bandwidth ceiling for small-signal amplification in UHF bands. |
| hFE | 70–140 - DC current gain at 15 mA/8 V; enables predictable base drive design in cascode or common-emitter stages. |
| F (NF) | 1.4 dB max @ 900 MHz - Noise figure determines minimum detectable signal level in satellite receiver front-ends. |
| Ptot | 280 mW @ TS ≤ 48 °C - Total power dissipation limit governs thermal derating on PCBs without heatsinking. |
| RthJS | ≤365 K/W - Junction-to-soldering-point thermal resistance informs board layout copper area requirements for thermal management. |
Pinout & Package
SOT23 plastic surface-mount package with gull-wing leads, 3-pin configuration, and JEDEC MO-215 compliant outline. Marking "LOs" identifies device variant; tape-and-reel packaging supports automated assembly (3,000 pcs/reel, ø180 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base (B) | Control electrode for forward-biased junction; requires stable DC bias network to maintain hFE and minimize distortion. |
| 2 | Emitter (E) | Current sink terminal; typically grounded via RF choke or capacitor in common-emitter LNA configurations. |
| 3 | Collector (C) | Output node; connected to tuned load or matching network; must withstand VCEO and handle RF power delivery. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive tuner modules requiring reliability under thermal cycling and vibration stress. |
| RoHS-compliant packaging | Lead-free SOT23 construction meets EU Directive 2011/65/EU; no exemption required for Pb content. |
| Low Ccb capacitance | 0.39–0.55 pF minimizes Miller effect, preserving gain stability above 1 GHz in broadband amplifier designs. |
| Gma = 16 dB @ 900 MHz | Maximum available power gain enables single-stage LNA implementation without cascading, reducing component count. |
Applications
| Digital Satellite TV Tuner | UHF Wireless Microphone Receiver |
|---|---|
Use Scenario: Front-end low-noise amplification of 950–2150 MHz satellite IF signals prior to downconversion. IC Role / Device Role / Timing Role: NPN RF transistor configured as common-emitter LNA with emitter degeneration for linearity control. Use Value: 1.4 dB noise figure and 13 dB transducer gain at 900 MHz ensure >10 dB SNR margin in weak-signal reception. | Use Scenario: RF preamplifier stage in portable UHF wireless microphone receivers operating at 863–865 MHz. IC Role / Device Role / Timing Role: Small-signal amplifier with fixed 15 mA collector bias, matched to 50 Ω input/output for plug-and-play integration. Use Value: 7.5 dB |S21|² at 1.8 GHz maintains sufficient gain headroom across full UHF band without active tuning. |
| CATV Set-Top Box Tuner | ISM Band Sensor Transmitter |
Use Scenario: First-stage amplification in 54–862 MHz CATV tuner modules with integrated channel selection filters. IC Role / Device Role / Timing Role: High-linearity NPN transistor biased at 15 mA/8 V to suppress intermodulation distortion from adjacent-channel interference. Use Value: hFE = 70–140 ensures consistent gain across production lots, simplifying factory calibration. | Use Scenario: Low-power RF driver in 902–928 MHz ISM-band sensor nodes transmitting telemetry over short range. IC Role / Device Role / Timing Role: Class-A small-signal amplifier delivering 280 mW Ptot-limited output into 50 Ω load. Use Value: RthJS ≤ 365 K/W allows continuous operation at ambient up to 85 °C without thermal shutdown in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN RF transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP181W | fT = 7 GHz, Ccb = 0.25 pF (typ), VCEO = 12 V | Higher fT supports wider bandwidth but lower breakdown voltage limits use in 15 V supply rails. | Select when >5 GHz operation is required and supply voltage is ≤12 V. |
| MMDT2222A | hFE = 100–300 (min), fT = 300 MHz, VCEO = 40 V | Lower fT restricts use to VHF and below; higher VCEO suits general-purpose switching over RF amplification. | Select for cost-sensitive non-RF applications where gain consistency matters more than frequency response. |
Compared with BFP181W and MMDT2222A, BF775 E6327 uniquely balances 5 GHz fT, 15 V VCEO, and 1.4 dB NF-making it optimal for UHF TV-Sat tuners where both noise performance and supply compatibility are critical.
Availability
BF775 E6327 is available at Aetrix Electronics and suitable for digital satellite TV tuners, UHF wireless microphone receivers, CATV set-top box front-ends, and ISM-band sensor transmitters requiring stable component supply and AEC-Q101 reliability validation.
Supply support for BF775 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and R&D centers.
The BF775 belongs to Infineon's RF bipolar transistor product line, engineered specifically for low-noise, high-gain amplification in consumer and automotive broadcast tuner applications up to 2.15 GHz.
FAQ
What is the maximum operating frequency for stable gain in BF775 E6327?
The BF775 E6327 maintains ≥7.5 dB transducer gain up to 1.8 GHz with 50 Ω source/load termination. Its fT of 3.5–5 GHz indicates usable small-signal amplification beyond 2 GHz, but practical gain flatness is validated only to 1.8 GHz per datasheet AC characteristics table.
Is BF775 E6327 suitable for automotive applications?
Yes-BF775 E6327 is qualified to AEC-Q101 Rev D for stress testing including temperature cycling, humidity bias, and mechanical shock. Its 150 °C junction temperature rating and RoHS-compliant SOT23 package meet automotive tuner module requirements per ISO/TS 16949 production standards.
How does the noise figure vary with bias conditions?
Noise figure is specified as 1.4 dB maximum at IC = 2 mA, VCE = 6 V, and 900 MHz. At higher collector currents (e.g., 15 mA), F increases to ~2.0 dB due to increased shot noise; optimal NF occurs near 1–3 mA, confirmed by Infineon's Application Note AN2007-02.
Can BF775 E6327 replace BC847 in RF circuits?
No-BC847 is a general-purpose NPN transistor with fT ≈ 300 MHz and no RF-optimized capacitance or noise specifications. BF775 E6327 has 10× higher fT, lower Ccb, and guaranteed 1.4 dB NF, making it unsuitable as a drop-in replacement for switching or audio applications where BC847 is used.
BF 775 E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Voltage - Collector Emitter Breakdown (Max):
- 15V
- Frequency - Transition:
- 5GHz
- Noise Figure (dB Typ @ f):
- 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
- Gain:
- 10.5dB ~ 16dB
- Power - Max:
- 280mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 15mA, 8V
- Current - Collector (Ic) (Max):
- 45mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BF 775 E6327 FAQ
1.How can I place an order for BF 775 E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BF 775 E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BF 775 E6327 reliable?
The price and inventory of BF 775 E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF 775 E6327 is usually 5 days.
3.What payment methods are accepted for BF 775 E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF 775 E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BF 775 E6327?
BF 775 E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BF 775 E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BF 775 E6327?
For technical support, including BF 775 E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF 775 E6327 requirements.
6.How does Aetrix verify that BF 775 E6327 is sourced from the original manufacturer or authorized distributors?
All BF 775 E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF 775 E6327 meets industry standards.
7.What is the process for return or replacement of BF 775 E6327?
All BF 775 E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BF 775 E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BF 775 E6327 part is unused and in its original packaging.
Return procedure for BF 775 E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BF 775 E6327 Tags

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BFR182WH6327XTSA1
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BFR92PE6327HTSA1
Infineon Technologies

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BFR360FH6327XTSA1
Infineon Technologies

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BFU550AR
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BFR460L3E6327XTMA1
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MMBTH81
onsemi

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BFU520WX
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BFP840FESDH6327XTSA1
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BFP650H6327XTSA1
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BFU520AR
NXP USA Inc.

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BFS483H6327XTSA1
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