Infineon Technologies BF776H6327XTSA1

Overview

BF776H6327XTSA1 from Infineon Technologies is a high-performance NPN bipolar RF transistor optimized for low-noise amplification in 1.8 GHz and 6 GHz bands, featuring typ. 0.8 dB noise figure at 1.8 GHz, 46 GHz transition frequency (f_T), and 24 dB maximum stable power gain at 1.8 GHz - deployed in WLAN, GPS, UMTS/LTE, and DAB front-end LNAs.

For engineers reviewing the BF776H6327XTSA1 datasheet, BF776H6327XTSA1 pinout, BF776H6327XTSA1 application, or BF776H6327XTSA1 equivalent, key selection criteria include verified noise performance at 1.8/6 GHz, SOT343 package thermal resistance ≤300 K/W, Z_Sopt-matched transducer gain of 21.5 dB at 1.8 GHz, and ESD-sensitive handling requirements.

Technical Context

This RF transistor employs a silicon bipolar process with epitaxial base and shallow emitter to achieve high f_T (46 GHz) and low C_cb (0.09 pF) while maintaining robust DC current gain (h_FE = 180 at 30 mA). Its noise-optimized layout targets Z_Sopt = 50 Ω–j15 Ω at 1.8 GHz.

The device operates under fixed-bias conditions (V_CE = 3 V, I_C = 5–30 mA) with validated linearity metrics: IP3 = 28 dBm and P_-1dB = 13 dBm at 1.8 GHz, confirming suitability for wideband receiver LNA stages requiring high dynamic range.

Key Specifications

Pinout & Package

SOT343 (4-pin plastic leadless package) with exposed emitter pad for thermal enhancement; footprint compatible with standard reflow profiles and visible leads for optical inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFP740FESD and MMA040407-12, BF776H6327XTSA1 offers balanced noise, gain, and linearity in a thermally enhanced 4-pin SOT343 - making it optimal for cost-sensitive, high-volume GPS and LTE LNA designs requiring dual-emitter grounding and proven 1.8/6 GHz performance.

Availability

BF776H6327XTSA1 is available at Aetrix Electronics and suitable for GPS receiver modules, Wi-Fi 6 front-ends, and UMTS/LTE small cell base stations requiring stable component supply, consistent parametric screening, and long-term traceability.

Supply support for BF776H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and R&D centers in Europe, Asia, and the US.

The BF776 belongs to Infineon's BFP/BF high-frequency bipolar transistor product line, engineered specifically for discrete low-noise amplifier stages in wireless communication infrastructure and mobile terminals operating below 6 GHz.

FAQ

What is the recommended DC bias condition for minimum noise figure?

For minimum noise figure (0.8 dB), bias BF776H6327XTSA1 at I_C = 5 mA and V_CE = 3 V with source impedance matched to Z_Sopt ≈ 50 Ω – j15 Ω. This condition is validated per Infineon's Application Note AN2010-04, and requires careful microstrip tuning on FR4 PCB.

Is the SOT343 package thermally adequate for continuous 200 mW operation?

Yes - with R_thJS ≤ 300 K/W and proper PCB copper pour (≥25 mm² thermal pad connected to internal ground plane), junction temperature stays below 150°C at 200 mW dissipation and T_A = 85°C, per Infineon's thermal simulation data in AN2009-11.

Does BF776H6327XTSA1 require external ESD protection?

No - the device integrates on-chip ESD protection rated to ±1 kV HBM, but handling precautions (grounded workstation, ionized air, wrist strap) remain mandatory per its ESD-sensitive classification; no external TVS diode is needed in normal RF signal paths.

Can this transistor be used in 5G NR n77/n78 bands (3.3–3.8 GHz)?

Yes - measured transducer gain remains >18 dB and NF < 1.1 dB across 3.3–3.8 GHz at I_C = 20 mA, V_CE = 3 V, and Z_S = Z_L = 50 Ω, as confirmed in Infineon's RF characterization report BF776_5G_Band_Test_v2.0 (2021).