Infineon Technologies BF799WH6327XTSA1

Overview

BF799WH6327XTSA1 from Infineon Technologies is an NPN silicon RF transistor optimized for linear broadband amplifier operation up to 500 MHz, with f_T = 800–1100 MHz (IC = 5–20 mA), V_CEO = 20 V, I_C = 35 mA, and low noise figure of 3 dB at 100 MHz - used as SAW filter driver in analog/digital TV tuners.

For engineers reviewing the BF799WH6327XTSA1 datasheet, BF799WH6327XTSA1 pinout, BF799WH6327XTSA1 application, or BF799WH6327XTSA1 equivalent, key selection criteria include RF gain linearity at V_CE = 10 V, thermal resistance R_thJS ≤ 155 K/W, SOT323 package footprint compatibility, and noise performance in 50 Ω impedance-matched front-end stages.

Technical Context

This RF transistor employs epitaxial planar technology with gold-metallized base contact for stable high-frequency performance. Its f_T exceeds 800 MHz under standard bias (IC = 5 mA, V_CE = 10 V), and Cob is tightly specified at 0.96 pF (typ.) to minimize Miller effect in broadband amplifiers.

The device operates in common-emitter configuration with defined DC current gain (h_FE = 35–250) and low V_CEsat (0.1–0.3 V at IC = 20 mA), enabling efficient small-signal amplification while maintaining thermal stability up to T_j = 150 °C.

Key Specifications

Pinout & Package

SOT323 (SC-70) surface-mount plastic package with 3-pin configuration: compact 2.1 × 1.25 mm footprint, 0.65 mm pin pitch, and gull-wing leads suitable for reflow assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFP181W and MRF901, BF799WH6327XTSA1 uniquely balances 20 V ruggedness, 500 MHz linear bandwidth, SOT323 miniaturization, and 3 dB noise figure - making it optimal for cost-sensitive, space-constrained TV tuner front-ends.

Availability

BF799WH6327XTSA1 is available at Aetrix Electronics and suitable for TV tuner modules, SAW filter driver circuits, and UHF broadband preamplifiers requiring stable component supply, RoHS compliance, and consistent RF performance across production batches.

Supply support for BF799WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, industrial, and RF solutions, with global R&D and manufacturing infrastructure.

The BF799W belongs to Infineon's RF bipolar transistor product line, designed specifically for high-linearity, low-noise amplification in consumer broadcast and wireless receiver front-ends up to 500 MHz.

FAQ

What is the maximum operating frequency for linear amplification with BF799WH6327XTSA1?

The BF799WH6327XTSA1 maintains usable linear gain up to 500 MHz in broadband amplifier configurations. Its transition frequency f_T reaches 1100 MHz under high-current bias (IC = 20 mA), but practical small-signal gain bandwidth is limited by matching network losses and Cob-induced roll-off - verified in Infineon's EHT07116 characterization plot.

Can BF799WH6327XTSA1 replace BC847 in RF applications?

No - BC847 is a general-purpose low-frequency transistor (f_T ≈ 300 MHz, no RF-optimized Cob or noise specs). BF799WH6327XTSA1 has 3× higher f_T, 0.96 pF Cob (vs. ~4 pF for BC847), and 3 dB noise figure, making it unsuitable as a drop-in replacement for digital switching but essential for RF signal integrity.

Is thermal derating required for continuous operation at ambient 85 °C?

Yes - at T_A = 85 °C, junction temperature must stay ≤ 150 °C. With R_thJS ≤ 155 K/W and typical PCB thermal resistance, maximum allowable P_tot drops to ~180 mW. Derating curves in Infineon's document EHT07117 confirm 280 mW is only valid at T_S = 107 °C (solder point temperature).

Does BF799WH6327XTSA1 support DC bias networks for Class-A operation?

Yes - its h_FE range (35–250) and V_BEsat ≤ 0.95 V allow robust DC bias design using emitter degeneration resistors and base voltage dividers. Application Note AN077 provides layout guidance for stable thermal biasing in SOT323 packages without oscillation risk.