Infineon Technologies BF888H6327XTSA1

Overview

BF888H6327XTSA1 from Infineon Technologies is a high-performance NPN bipolar RF transistor optimized for low-noise amplification in 1.8–6 GHz front-end stages. It delivers typ. 14 dB transducer gain at 6 GHz, 0.85 dB noise figure at 6 GHz, and 11 dBm output compression at 25 mA, housed in a RoHS-compliant SOT343 package. It is used in LNB second/third LNA stages, 5.8 GHz cordless phones, SDARS satellite radio, and WLAN/WiMAX receivers.

For engineers reviewing the BF888H6327XTSA1 datasheet, BF888H6327XTSA1 pinout, BF888H6327XTSA1 application, or BF888H6327XTSA1 equivalent, key selection criteria include verified f_T = 47 GHz, C_cb = 0.08 pF, Z_Sopt-matched noise performance, SOT343 thermal resistance (R_thJS ≤ 380 K/W), and ESD sensitivity handling requirements.

Technical Context

This NPN RF transistor operates with V_CEO = 4.0 V and I_C = 30 mA max, supporting pulsed and CW operation in narrowband LNA/mixer topologies. Its f_T of 47 GHz and ultra-low parasitic capacitances (C_cb = 0.08 pF, C_ce = 0.35 pF, C_eb = 0.45 pF) enable stable gain and noise performance up to 6 GHz under Z_Sopt/Z_Lopt matching.

The device exhibits h_FE ≥ 250 at I_C = 25 mA/V_CE = 3 V and maintains F = 0.5 dB min at 1.8 GHz and 0.85 dB typ at 6 GHz - critical for cascaded LNA design where cumulative noise figure dominates system sensitivity.

Key Specifications

Pinout & Package

BF888H6327XTSA1 is supplied in a lead-free, RoHS-compliant SOT343 (SC-82AB) surface-mount package with four terminals. The package features a thermally enhanced emitter lead layout and is rated for T_J = 150 °C maximum.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFP740FESD and MMA041107, BF888H6327XTSA1 uniquely balances sub-0.9 dB noise figure, 14 dB gain at 6 GHz, and 11 dBm compression in a thermally robust SOT343 - making it optimal for multi-stage LNB LNAs where noise accumulation and thermal density are co-constrained.

Availability

BF888H6327XTSA1 is available at Aetrix Electronics and suitable for satellite LNB modules, 5.8 GHz cordless communication systems, SDARS tuners, and WiMAX receiver front-ends requiring stable component supply, consistent parametric yield, and RoHS-compliant packaging.

Supply support for BF888H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global R&D and manufacturing infrastructure.

BF888H6327XTSA1 belongs to Infineon's high-frequency bipolar transistor product line, engineered specifically for low-noise, high-gain RF amplification in consumer and industrial wireless receivers up to 6 GHz.

FAQ

What is the recommended DC bias condition for optimal noise figure at 6 GHz?

For minimum noise figure of 0.85 dB at 6 GHz, operate BF888H6327XTSA1 at I_C = 8 mA and V_CE = 3 V with source impedance matched to Z_Sopt ≈ 12 + j18 Ω. Bias must be applied via RF chokes on base and collector, with emitter grounded through low-inductance vias to minimize parasitic reactance.

Can BF888H6327XTSA1 be used in a common-base configuration?

Yes - its f_T = 47 GHz and low C_cb = 0.08 pF make it suitable for common-base LNA designs requiring wideband input matching and high reverse isolation. However, input impedance becomes highly capacitive (~−j50 Ω at 6 GHz), requiring careful microstrip stub or capacitor-based matching.

Is thermal derating required above 85 °C ambient?

Yes - with R_thJS ≤ 380 K/W and P_tot = 160 mW at T_S ≤ 89 °C, junction temperature exceeds 150 °C if ambient exceeds 85 °C without additional heatsinking. Derate linearly to zero power at T_A = 110 °C for standard SOT343 mounting on 1-oz copper.

Does the dual-emitter configuration require separate grounding paths?

No - pins 2 and 4 are internally connected to the same emitter region and must be soldered to the same low-impedance RF ground plane. Using separate traces introduces asymmetry, degrading gain flatness and increasing thermal resistance by up to 15%.