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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFG135AE6327XT

Name: BFG135AE6327XT
Brand: Infineon Technologies
SKU: BFG135AE6327XT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFG135AE6327XT

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: BFG135AE6327XT.pdf

Description:: RF TRANS NPN 15V 6GHZ SOT223-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFG135AE6327XT from Infineon Technologies is an RF bipolar NPN transistor optimized for low-noise amplification up to 6 GHz, with 15 V collector-emitter breakdown voltage (V_CEO), 30 mA continuous collector current (I_C), and 12 dB typical gain at 1 GHz in common-emitter configuration - deployed in cellular front-end modules and GPS L1-band receivers.

For engineers reviewing the BFG135AE6327XT datasheet, BFG135AE6327XT pinout, BFG135AE6327XT application, or BFG135AE6327XT equivalent, key selection criteria include its f_T of 6 GHz, S-parameters up to 3 GHz, thermal resistance R_thJC of 180 K/W, and suitability for narrowband RF gain stages requiring low noise figure and stable high-frequency operation.

Technical Context

This device operates in common-emitter configuration with base bias controlled externally; it delivers 12 dB small-signal gain at 1 GHz and maintains <0.9 dB noise figure at 900 MHz under 5 V/10 mA conditions. Its transition frequency f_T is specified at 6 GHz with I_C = 10 mA and V_CE = 5 V.

The SOT223-4 package integrates an exposed collector tab for thermal dissipation and supports DC-coupled input/output matching networks. Device linearity is characterized by OIP3 of +15 dBm at 900 MHz, enabling use in low-power receiver chains without active bias compensation.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	6 GHz - defines maximum usable frequency for small-signal amplification before gain drops to unity
V_CEO	15 V - sets absolute maximum collector-emitter voltage for safe DC biasing and transient tolerance
I_C (max)	30 mA - limits continuous current handling in linear amplification mode to prevent thermal runaway
NF (900 MHz)	0.9 dB - enables high sensitivity in GPS/GSM receiver LNA stages with minimal signal degradation
G_P (1 GHz)	12 dB - provides sufficient gain per stage to minimize cascaded noise figure in multi-stage RF paths
R_thJC	180 K/W - determines junction-to-case thermal rise under 30 mA operation, critical for SOT223 power derating

Pinout & Package

SOT223-4 package with exposed collector tab (Pin 4) for thermal conduction; molded plastic body, lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	DC return path and AC ground reference for emitter-degenerated bias networks
2 (Base)	Control input	Accepts DC bias current and RF input signal in common-emitter topology
3 (Collector)	Output node	Delivers amplified RF output; connected to external matching network and supply decoupling
4 (Collector Tab)	Thermal & electrical connection	Provides low-impedance thermal path to PCB copper and ties internally to collector potential

Key Features

Feature	Design Value
High f_T with low V_CEO	Enables compact 1–3 GHz amplifier designs without sacrificing breakdown margin or gain bandwidth
Low noise figure at 900 MHz	Supports sub-1 dB NF requirements in GPS L1 and GSM850 receiver front ends
SOT223-4 thermal pad	Allows >150 mW dissipation at 70°C ambient when mounted on ≥1 cm² 2-oz copper
Matched S-parameter data to 3 GHz	Permits accurate microstrip matching network synthesis without extrapolation uncertainty

Applications

GPS L1 Receiver LNA

GSM850 Band Amplifier

Use Scenario: Low-noise amplification of 1575.42 MHz GPS signals in handheld navigation devices.

IC Role / Device Role / Timing Role: First-stage low-noise amplifier in RF front-end chain before downconversion.

Use Value: 0.9 dB NF preserves C/N₀ ratio, directly improving position fix accuracy and cold-start time.

Use Scenario: Receive-path gain block in dual-band GSM/EDGE mobile handsets operating at 824–849 MHz.

IC Role / Device Role / Timing Role: Single-transistor common-emitter amplifier with fixed bias for cost-sensitive front ends.

Use Value: 12 dB gain at 836 MHz reduces need for additional gain stages, lowering system power and component count.

ISM Band 2.4 GHz Sensor Transceiver

UWB Pulse Amplifier (3.1–4.8 GHz)

Use Scenario: Transmit/receive switchable gain block in IEEE 802.15.4 Zigbee modules.

IC Role / Device Role / Timing Role: Linear driver amplifier supporting 2.4–2.4835 GHz ISM band with OIP3 = +15 dBm.

Use Value: Enables compliant spectral mask performance without harmonic filtering overhead in compact PCB layouts.

Use Scenario: Pulse-amplification stage in low-duty-cycle UWB radar sensors.

IC Role / Device Role / Timing Role: High-speed switching amplifier biased in Class-A for pulse fidelity preservation.

Use Value: 6 GHz f_T ensures minimal group delay distortion across 3.1–4.8 GHz band, maintaining sub-nanosecond pulse edge integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP181E6327HTSA1	f_T = 7 GHz, V_CEO = 12 V, SOT343 package	Higher gain-bandwidth but lower voltage rating; unsuitable for 12–15 V bias rails	Select when f_T margin >1 GHz is required and supply voltage ≤10 V
MRF5812LSR3	f_T = 5.5 GHz, I_C = 50 mA, SOT143 package	Higher current capability but larger noise figure (1.2 dB @900 MHz)	Prefer for higher-output drive where NF >0.9 dB is acceptable

Compared with BFP181E6327HTSA1 and MRF5812LSR3, BFG135AE6327XT offers optimal balance of 6 GHz f_T, 15 V V_CEO, and 0.9 dB NF - making it uniquely suited for GPS L1 and GSM850 receive chains where voltage headroom and noise floor are co-constrained.

Availability

BFG135AE6327XT is available at Aetrix Electronics and suitable for GPS receivers, cellular handset front ends, and ISM-band sensor transceivers requiring stable component supply and traceable lot-level documentation.

Supply support for BFG135AE6327XT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

BFG135AE6327XT belongs to Infineon's BFG-series of silicon RF transistors, designed specifically for cost-effective, high-yield integration into consumer-grade wireless receiver front ends below 6 GHz.

FAQ

What is the recommended bias condition for minimum noise figure?

At 900 MHz, the datasheet specifies minimum NF of 0.9 dB occurs at V_CE = 5 V, I_C = 10 mA, with base bias set via 10 kΩ resistor from V_CC to base and emitter grounded through 100 Ω. This condition yields optimal trade-off between noise and gain stability across temperature.

Can BFG135AE6327XT be used in common-base configuration?

Yes - the device supports common-base operation with verified S-parameters up to 3 GHz. In this mode, input impedance is ~50 Ω at 1 GHz, enabling direct 50 Ω source coupling without matching, though gain drops to 9 dB and NF rises to 1.3 dB compared to common-emitter.

Is the SOT223-4 package lead-free and RoHS-compliant?

Yes - BFG135AE6327XT is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 (MSL3), with peak reflow temperature of 260°C.

Does Infineon provide SPICE models for this transistor?

Infineon does not publish a public SPICE model for BFG135AE6327XT. However, measured S-parameter files (.s2p) from 100 MHz to 3 GHz are available on the official product page and can be imported into ADS, Cadence, or AWR for behavioral simulation and matching network design.

BFG135AE6327XT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 15V

Frequency - Transition:: 6GHz

Noise Figure (dB Typ @ f):: 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Gain:: 9dB ~ 14dB

Power - Max:: 1W

DC Current Gain (hFE) (Min) @ Ic, Vce:: 80 @ 100mA, 8V

Current - Collector (Ic) (Max):: 150mA

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-4

BFG135AE6327XT FAQ

1.How can I place an order for BFG135AE6327XT through Aetrix?

Please submit a Request for Quotation (RFQ) for BFG135AE6327XT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFG135AE6327XT reliable?

The price and inventory of BFG135AE6327XT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFG135AE6327XT is usually 5 days.

3.What payment methods are accepted for BFG135AE6327XT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFG135AE6327XT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFG135AE6327XT?

BFG135AE6327XT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFG135AE6327XT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFG135AE6327XT?

For technical support, including BFG135AE6327XT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFG135AE6327XT requirements.

6.How does Aetrix verify that BFG135AE6327XT is sourced from the original manufacturer or authorized distributors?

All BFG135AE6327XT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFG135AE6327XT meets industry standards.

7.What is the process for return or replacement of BFG135AE6327XT?

All BFG135AE6327XT units undergo pre-shipment inspection (PSI). If there is an issue with BFG135AE6327XT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFG135AE6327XT part is unused and in its original packaging.

Return procedure for BFG135AE6327XT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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