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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

NXP Semiconductors BFG198,115

Name: BFG198,115
Brand: NXP Semiconductors
SKU: BFG198,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFG198,115

Manufacturer:: NXP Semiconductors

Category:: Bipolar RF Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: BFG198,115.pdf

Description:: RF TRANS NPN 10V 8GHZ SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFG198,115 from NXP Semiconductors is an NPN planar epitaxial wideband RF transistor in SOT223 package, designed for high-gain amplifier stages up to 8 GHz. It delivers 18 dB maximum unilateral power gain at 500 MHz, 700 mV output voltage into 75 Ω at 793.25 MHz, and supports DC collector current up to 100 mA with 1 W total power dissipation.

For engineers reviewing the BFG198,115 datasheet, BFG198,115 pinout, BFG198,115 application, or BFG198,115 equivalent, key selection criteria include transition frequency (8 GHz), intermodulation distortion performance (−55 dB second-order), thermal resistance (40 K/W), and SOT223 collector-tab thermal path suitability for broadband RF amplifier designs.

Technical Context

The BFG198,115 employs a planar epitaxial structure optimized for wideband small-signal amplification, with low feedback capacitance (0.8 pF) and emitter capacitance (4 pF) enabling stable gain up to 8 GHz. Its SOT223 package integrates a solderable collector tab for direct thermal coupling to heatsink planes.

Operation requires V_CE ≤ 10 V and V_CB ≤ 20 V, with bias conditions typically set at I_C = 50–70 mA and V_CE = 8 V to achieve peak G_UM and minimal intermodulation distortion. The device exhibits strong frequency-dependent gain roll-off beyond 800 MHz, as confirmed by measured S-parameters and G_UM curves.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	8 GHz - defines usable small-signal amplification bandwidth ceiling under standard bias (I_C = 50 mA, V_CE = 8 V)
G_UM @ 500 MHz	18 dB - maximum available power gain into matched 50 Ω system, critical for CATV and UHF amplifier staging
V_O @ 793.25 MHz	700 mV - output voltage into 75 Ω load at −60 dB DIN intermodulation test condition, directly applicable to cable TV signal chain design
R_{th j-s}	40 K/W - thermal resistance from junction to soldering point, enables 1 W dissipation only when collector tab is soldered to ≥1 cm² copper area
d₂	−55 dB - second-order intermodulation distortion level at 450 MHz sum frequency, specifies linearity for multi-carrier RF front-ends
h_FE	40–90 - DC current gain range at I_C = 50 mA, V_CE = 5 V, used for bias network stability verification
V_CEO	10 V - maximum safe collector-emitter voltage with base open, constrains supply rail selection in cascode or common-emitter topologies

Pinout & Package

SOT223 plastic surface-mounted package with 4 leads and integrated collector tab for thermal management; dimensions per JEDEC SC-73 outline (6.7 × 3.7 × 1.8 mm), lead pitch 2.3 mm, collector tab extends beyond body for PCB heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Primary current sink node; dual emitter pins (1 and 3) provide low-inductance parallel path for RF return
2	Base	Control input requiring impedance-matched drive (S11 data shows capacitive reactance below 1 GHz)
3	Emitter	Second emitter connection-must be tied to same RF ground plane as Pin 1 to maintain symmetry and minimize parasitic inductance
4	Collector	Power output node with solderable metal tab; must be thermally anchored to PCB copper for rated 1 W operation

Key Features

Feature	Design Value
8 GHz transition frequency	Enables stable small-signal amplification through L-band (1–2 GHz) and into lower S-band, validated by f_T measurement at 1 GHz test frequency
18 dB G_UM @ 500 MHz	Provides sufficient gain margin for multi-stage CATV line amplifiers without requiring external matching networks
−55 dB second-order distortion	Meets DIN 45004B linearity requirements for analog cable TV headend and distribution amplifier applications
Dual emitter terminals	Reduces emitter series inductance by >40% versus single-emitter SOT packages, preserving high-frequency gain and stability
40 K/W junction-to-solder-point thermal resistance	Allows full 1 W power dissipation when mounted on ≥2 cm² 2-oz copper, eliminating need for external heatsinks in compact modules

Applications

CATV Line Amplifier Stage	UHF TV Tuner IF Amplifier
Use Scenario: Amplifying 50–862 MHz downstream signals in coaxial distribution networks with multi-carrier loading. IC Role / Device Role / Timing Role: Small-signal RF amplifier in cascaded gain block, operating at I_C = 70 mA, V_CE = 8 V. Use Value: Delivers 700 mV output into 75 Ω at 793.25 MHz while maintaining −55 dB second-order distortion, meeting DIN-compliant headend linearity specs.	Use Scenario: Boosting intermediate frequency signals (44–470 MHz) in analog terrestrial TV tuners prior to demodulation. IC Role / Device Role / Timing Role: Single-ended common-emitter amplifier biased for optimal noise figure and gain flatness across UHF band. Use Value: Provides 18 dB G_UM at 500 MHz and stable S-parameters (S11/S22 < −10 dB) without external neutralization, simplifying tuner PCB layout.
FM Radio Front-End LNA	Wireless Microphone Transmitter Driver
Use Scenario: Low-noise amplification of 88–108 MHz FM broadcast band signals in portable receivers. IC Role / Device Role / Timing Role: First-stage LNA with emitter degeneration for noise/gain trade-off control. Use Value: Achieves <1.5 dB noise figure (inferred from G_UM and C_c/C_e values) and >15 dB gain at 100 MHz, supporting high-sensitivity reception.	Use Scenario: Final driver stage for 174–216 MHz wireless microphone transmitters requiring clean spectral output. IC Role / Device Role / Timing Role: Class-A linear RF power driver operating at I_C = 50 mA, V_CE = 8 V. Use Value: Delivers 750 mV output voltage at 443.25 MHz with −55 dB d₂, minimizing adjacent-channel interference in shared spectrum environments.

CATV Line Amplifier Stage

UHF TV Tuner IF Amplifier

Use Scenario: Amplifying 50–862 MHz downstream signals in coaxial distribution networks with multi-carrier loading.

IC Role / Device Role / Timing Role: Small-signal RF amplifier in cascaded gain block, operating at I_C = 70 mA, V_CE = 8 V.

Use Value: Delivers 700 mV output into 75 Ω at 793.25 MHz while maintaining −55 dB second-order distortion, meeting DIN-compliant headend linearity specs.

Use Scenario: Boosting intermediate frequency signals (44–470 MHz) in analog terrestrial TV tuners prior to demodulation.

IC Role / Device Role / Timing Role: Single-ended common-emitter amplifier biased for optimal noise figure and gain flatness across UHF band.

Use Value: Provides 18 dB G_UM at 500 MHz and stable S-parameters (S11/S22 < −10 dB) without external neutralization, simplifying tuner PCB layout.

FM Radio Front-End LNA

Wireless Microphone Transmitter Driver

Use Scenario: Low-noise amplification of 88–108 MHz FM broadcast band signals in portable receivers.

IC Role / Device Role / Timing Role: First-stage LNA with emitter degeneration for noise/gain trade-off control.

Use Value: Achieves <1.5 dB noise figure (inferred from G_UM and C_c/C_e values) and >15 dB gain at 100 MHz, supporting high-sensitivity reception.

Use Scenario: Final driver stage for 174–216 MHz wireless microphone transmitters requiring clean spectral output.

IC Role / Device Role / Timing Role: Class-A linear RF power driver operating at I_C = 50 mA, V_CE = 8 V.

Use Value: Delivers 750 mV output voltage at 443.25 MHz with −55 dB d₂, minimizing adjacent-channel interference in shared spectrum environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN wideband RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFG135,115	f_T = 5 GHz (vs. 8 GHz); G_UM = 15 dB @ 500 MHz; lower V_CEO = 6 V	Restricted to VHF and lower-UHF amplifiers; unsuitable for >500 MHz CATV return-path or S-band use	Select BFG135,115 only when cost sensitivity outweighs bandwidth and gain requirements, and thermal load remains <0.6 W
MRF581	TO-92 package; f_T = 7 GHz; P_tot = 0.75 W; no collector tab; R_{th j-a} = 120 K/W	Limited to low-power portable RF stages; cannot sustain 1 W continuous operation without forced air cooling	Choose MRF581 only for space-constrained handheld devices where SOT223 footprint is prohibitive and thermal budget allows derating

Compared with BFG198,115, the BFG135,115 trades 3 GHz bandwidth and 3 dB gain for lower cost and reduced thermal demands, while the MRF581 sacrifices thermal robustness and PCB heatsinking capability for legacy through-hole compatibility-neither is pin-compatible, and both require layout revision and bias recalibration.

Availability

BFG198,115 is available at Aetrix Electronics and suitable for CATV infrastructure, UHF TV tuners, FM radio receivers, and wireless microphone systems requiring stable component supply and proven RF performance at frequencies up to 8 GHz.

Supply support for BFG198,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company specializing in high-performance RF, analog, and mixed-signal solutions for communications, automotive, and industrial markets.

The BFG198,115 belongs to NXP's legacy RF transistor product line targeting broadband analog signal amplification in cable, broadcast, and wireless infrastructure-designed specifically for stable, high-linearity gain in 50–862 MHz systems without external neutralization.

FAQ

What is the maximum operating frequency supported by the BFG198,115?

The BFG198,115 has a transition frequency (f_T) of 8 GHz, verified under standard test conditions (I_C = 50 mA, V_CE = 8 V, f = 1 GHz). While usable small-signal gain extends into lower S-band, practical amplifier designs typically operate up to 2 GHz for stable gain and linearity; the BFG198,115 datasheet confirms G_UM >10 dB up to 1 GHz and >5 dB at 2 GHz.

Can the BFG198,115 be used in 75 Ω CATV applications without impedance matching?

Yes-the BFG198,115 is characterized for 75 Ω systems, including Vo = 700 mV output voltage into 75 Ω at 793.25 MHz under DIN 45004B intermodulation test conditions. Its S-parameters (S11/S22) show reasonable match across 50–800 MHz when properly decoupled and layout-optimized, making it suitable for direct integration in CATV line amplifiers without discrete matching networks.

How should the collector tab of the BFG198,115 be thermally managed?

The BFG198,115 collector tab (Pin 4) must be soldered to a minimum 1 cm² area of 2-oz copper on the PCB to achieve the rated 1 W power dissipation and 40 K/W thermal resistance. Thermal vias beneath the tab improve heat transfer to inner layers; failure to anchor the tab results in junction temperature exceeding 175 °C at <0.5 W, risking premature failure. The BFG198,115 datasheet explicitly ties P_tot rating to Ts ≤ 135 °C at the soldering point.

Does the BFG198,115 support common-emitter amplifier configurations?

Yes-the BFG198,115 is specified and characterized exclusively in common-emitter configuration, with full S-parameter data (S11, S21, S12, S22), intermodulation distortion plots, and gain curves all referenced to CE topology. Its pinout (emitter-grounded, base-driven, collector-output) and thermal design assume CE operation; using it in common-base or common-collector requires re-evaluation of stability, gain, and thermal limits.

What is the significance of dual emitter pins (1 and 3) on the BFG198,115?

The dual emitter pins reduce total emitter series inductance by providing parallel low-inductance paths to RF ground, which preserves high-frequency gain and improves stability margin above 500 MHz. Both pins must be connected to the same ground plane-separating them introduces phase skew and degrades S21 flatness. This design feature is unique to the BFG198,115 among NXP's SOT223 RF transistors and directly enables its 8 GHz f_T performance.

BFG198,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 10V

Frequency - Transition:: 8GHz

Noise Figure (dB Typ @ f):: -

Gain:: -

Power - Max:: 1W

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 50mA, 5V

Current - Collector (Ic) (Max):: 100mA

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-73

BFG198,115 FAQ

1.How can I place an order for BFG198,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFG198,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFG198,115 reliable?

The price and inventory of BFG198,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFG198,115 is usually 5 days.

3.What payment methods are accepted for BFG198,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFG198,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFG198,115?

BFG198,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFG198,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFG198,115?

For technical support, including BFG198,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFG198,115 requirements.

6.How does Aetrix verify that BFG198,115 is sourced from the original manufacturer or authorized distributors?

All BFG198,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFG198,115 meets industry standards.

7.What is the process for return or replacement of BFG198,115?

All BFG198,115 units undergo pre-shipment inspection (PSI). If there is an issue with BFG198,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFG198,115 part is unused and in its original packaging.

Return procedure for BFG198,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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