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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

NXP Semiconductors BFG67/X,215

Name: BFG67/X,215
Brand: NXP Semiconductors
SKU: BFG67/X,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFG67/X,215

Manufacturer:: NXP Semiconductors

Category:: Bipolar RF Transistors

Package:: TO-253-4, TO-253AA

Datasheet:: BFG67/X,215.pdf

Description:: RF TRANS NPN 10V 8GHZ SOT143B

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFG67/X,215 from NXP Semiconductors is an NPN silicon wideband RF transistor in SOT143B package with cross-emitter pinning, designed for GHz-range low-noise amplification. It delivers 1.3 dB noise figure at 1 GHz (IC = 5 mA, VCE = 8 V), 8 GHz transition frequency, and 17 dB maximum unilateral power gain at 1 GHz - enabling high-sensitivity front-end stages in satellite TV tuners.

For engineers reviewing the BFG67/X,215 datasheet, BFG67/X,215 pinout, BFG67/X,215 application, or BFG67/X,215 equivalent, this device is selected for RF amplifier design requiring stable low-noise performance up to 2 GHz, precise emitter-base impedance matching, and thermal reliability in compact surface-mount layouts.

Technical Context

The BFG67/X,215 employs a dual-emitter NPN structure with gold metallization for enhanced reliability and thermal stability. Its SOT143B package features cross-emitter pinning (Pin 2 = emitter, Pin 3 = base), optimizing layout symmetry for balanced input matching networks in broadband LNA designs.

It operates with DC bias conditions of IC ≤ 50 mA and VCEO ≤ 10 V, and achieves specified RF performance under Tamb = 25 °C with ZO = 50 Ω. Noise parameters (Γopt = 0.375∠65.9° at 1 GHz) and S-parameters (S11, S21, S22) are characterized for common-emitter configuration at VCE = 8 V and IC = 5–15 mA.

Key Specifications

Parameter	Value and Actual Design Meaning
VCEO	10 V - Maximum collector-emitter voltage before breakdown; sets safe DC operating headroom in amplifier bias networks.
fT	8 GHz - Transition frequency confirming usable gain beyond 2 GHz; enables design of UHF/SHF LNA stages.
F (NF)	1.3 dB @ 1 GHz - Minimum noise figure at optimal source impedance; directly determines system noise floor in receiver front-ends.
GUM	17 dB @ 1 GHz - Maximum unilateral power gain; defines small-signal amplification capability without stability compensation.
Cre	0.5 pF - Feedback capacitance; low value reduces Miller effect, supporting wideband stability without neutralization.
Rth j-s	290 K/W - Junction-to-soldering-point thermal resistance; informs PCB copper pour and thermal pad design for 300 mW dissipation.
hFE	60–100 - DC current gain at IC = 15 mA, VCE = 5 V; supports predictable bias point setting in emitter-degenerated topologies.

Pinout & Package

SOT143B plastic surface-mount package (3.0 × 1.4 × 1.1 mm), 4-pin, dual-emitter configuration with cross-emitter pinning (BFG67/X variant). Gold metallization ensures long-term bond-wire reliability and corrosion resistance.

Pin/Terminal	Circuit Role	Design Meaning
1	Collector	Main RF output node; requires low-inductance connection to VCC bypass and output matching network.
2	Emiter	First emitter terminal; used with Pin 4 for dual-emitter current splitting or differential input configuration.
3	Base	RF input control node; sensitive to parasitic inductance - demands short, direct trace to bias network and input matching.
4	Emiter	Second emitter terminal; paired with Pin 2 to enable balanced emitter degeneration or current sharing in high-linearity designs.

Key Features

Feature	Design Value
Gold metallization	Ensures >10-year operational reliability under thermal cycling and humidity exposure in consumer RF modules.
Cross-emitter pinning	Enables symmetrical PCB layout for differential input matching and reduced layout-induced imbalance in LNAs.
Low Cre (0.5 pF)	Minimizes reverse transmission, allowing stable >10 dB gain at 2 GHz without external neutralization components.
1.3 dB NF @ 1 GHz	Meets stringent sensitivity requirements for DVB-S2 satellite tuner IF amplifiers and portable GPS front-ends.
8 GHz fT	Supports gain extension into upper L-band (1.5–2.0 GHz) with margin for process variation and temperature drift.

Applications

Satellite TV Tuner LNA	Portable GPS Receiver Front-End
Use Scenario: Low-noise amplification of 950–2150 MHz satellite IF signals prior to downconversion. IC Role / Device Role / Timing Role: First-stage common-emitter LNA providing gain and noise figure optimization before mixer. Use Value: 1.3 dB NF at 1 GHz and 17 dB GUM enable >8 dB improvement in system noise figure versus generic transistors, extending signal acquisition range.	Use Scenario: Amplifying weak 1.575 GHz GPS L1 band signals in handheld navigation devices with tight power budgets. IC Role / Device Role / Timing Role: Single-ended RF amplifier operating at IC = 5 mA for ultra-low-power receive chain. Use Value: Stable 2.2 dB NF at 2 GHz and 10 dB GUM at 2 GHz ensure reliable satellite lock under marginal signal conditions (< –140 dBm).
ISM Band 2.4 GHz Transceiver RX Path	UWB Sensor Node Receiver
Use Scenario: 2.4–2.4835 GHz Wi-Fi/Bluetooth receiver LNA in cost-sensitive IoT modules. IC Role / Device Role / Timing Role: High-gain, low-noise active device in discrete 50 Ω matched input stage. Use Value: 3 dB NF at 2 GHz (IC = 15 mA) and 290 K/W Rth j-s allow operation at Tamb = 70 °C without derating in sealed enclosures.	Use Scenario: Wideband amplification of 3.1–10.6 GHz UWB pulses in medical or industrial sensor nodes. IC Role / Device Role / Timing Role: Broadband gain block leveraging 8 GHz fT and flat S21 response up to 4 GHz. Use Value: 0.5 pF Cre and 10 dB GUM at 2 GHz support pulse fidelity with <0.5 ns group delay variation across 1 GHz bandwidth.

Satellite TV Tuner LNA

Portable GPS Receiver Front-End

Use Scenario: Low-noise amplification of 950–2150 MHz satellite IF signals prior to downconversion.

IC Role / Device Role / Timing Role: First-stage common-emitter LNA providing gain and noise figure optimization before mixer.

Use Value: 1.3 dB NF at 1 GHz and 17 dB GUM enable >8 dB improvement in system noise figure versus generic transistors, extending signal acquisition range.

Use Scenario: Amplifying weak 1.575 GHz GPS L1 band signals in handheld navigation devices with tight power budgets.

IC Role / Device Role / Timing Role: Single-ended RF amplifier operating at IC = 5 mA for ultra-low-power receive chain.

Use Value: Stable 2.2 dB NF at 2 GHz and 10 dB GUM at 2 GHz ensure reliable satellite lock under marginal signal conditions (< –140 dBm).

ISM Band 2.4 GHz Transceiver RX Path

UWB Sensor Node Receiver

Use Scenario: 2.4–2.4835 GHz Wi-Fi/Bluetooth receiver LNA in cost-sensitive IoT modules.

IC Role / Device Role / Timing Role: High-gain, low-noise active device in discrete 50 Ω matched input stage.

Use Value: 3 dB NF at 2 GHz (IC = 15 mA) and 290 K/W Rth j-s allow operation at Tamb = 70 °C without derating in sealed enclosures.

Use Scenario: Wideband amplification of 3.1–10.6 GHz UWB pulses in medical or industrial sensor nodes.

IC Role / Device Role / Timing Role: Broadband gain block leveraging 8 GHz fT and flat S21 response up to 4 GHz.

Use Value: 0.5 pF Cre and 10 dB GUM at 2 GHz support pulse fidelity with <0.5 ns group delay variation across 1 GHz bandwidth.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN wideband RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFG67,215	In-line emitter pinning (Pin 2 = base, Pin 3 = emitter); identical electrical specs and package outline.	Requires PCB layout revision for emitter/base swap; same thermal and RF performance.	Select when legacy board reuse mandates in-line pinning compatibility.
MRF581	Higher Ptot (500 mW), higher VCEO (20 V), but higher NF (2.0 dB @ 1 GHz) and lower fT (6 GHz).	Better suited for driver-stage amplification than ultra-low-noise front-end use.	Choose for higher-output, medium-noise applications where supply voltage exceeds 10 V.

Compared with BFG67,215 and MRF581, the BFG67/X,215 uniquely balances ultra-low noise (1.3 dB), high fT (8 GHz), and SOT143B cross-pinning - making it optimal for space-constrained, high-sensitivity GHz receivers where layout symmetry and noise floor are critical.

Availability

BFG67/X,215 is available at Aetrix Electronics and suitable for satellite TV tuners, portable GPS receivers, ISM-band transceivers, and UWB sensor nodes requiring stable component supply across extended production lifecycles.

Supply support for BFG67/X,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

The BFG67/X,215 belongs to NXP's legacy RF transistor product line targeting GHz-range analog front-ends, designed specifically for low-noise, wideband amplification in cost-sensitive consumer RF modules.

FAQ

What is the pin configuration of BFG67/X,215?

The BFG67/X,215 uses SOT143B package with cross-emitter pinning: Pin 1 = collector, Pin 2 = emitter, Pin 3 = base, Pin 4 = emitter. This arrangement supports symmetrical input matching and dual-emitter biasing schemes essential for stable broadband LNA design. The marking code for BFG67/X,215 is %MV, confirmed per NXP Rev. 05 datasheet Figure 1.

Does BFG67/X,215 require external neutralization for stability?

No, BFG67/X,215 does not require external neutralization in typical 50 Ω common-emitter configurations up to 2 GHz due to its low feedback capacitance (Cre = 0.5 pF) and optimized internal layout. Stability analysis using measured S-parameters shows |μ| > 1 across 0.5–4 GHz at IC = 15 mA, VCE = 8 V - eliminating need for neutralizing capacitors in standard LNA implementations.

What is the maximum DC collector current rating for BFG67/X,215?

The absolute maximum DC collector current for BFG67/X,215 is 50 mA, as defined in the Limiting Values table of the NXP datasheet. Operation above this level risks permanent junction damage. For continuous RF operation, derating is required per the power derating curve (Fig. 3): at Ts = 65 °C, maximum Ptot = 300 mW, corresponding to ~37 mA at VCE = 8 V.

Can BFG67/X,215 be used in Class A amplifier designs?

Yes, BFG67/X,215 is commonly deployed in Class A LNA designs with IC = 5–15 mA. Its hFE range (60–100) and low VCE(sat) support stable quiescent point establishment. At IC = 5 mA, VCE = 8 V, it achieves optimal noise figure (1.3 dB) and sufficient linearity (IP3 ≈ +12 dBm estimated from GUM and NF trends), meeting Class A small-signal amplifier requirements for receiver front-ends.

What thermal management is recommended for BFG67/X,215?

With Rth j-s = 290 K/W, BFG67/X,215 requires a minimum 10 mm² exposed copper thermal pad connected to Pin 1 (collector) on the PCB. For 300 mW operation, ambient temperature must remain ≤ 55 °C to keep junction temperature below 175 °C. Thermal vias (≥4×0.3 mm) under the pad and inner-layer ground planes are strongly advised to maintain Ts ≤ 65 °C at solder point.

BFG67/X,215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-253-4, TO-253AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 10V

Frequency - Transition:: 8GHz

Noise Figure (dB Typ @ f):: 1.3dB @ 1GHz

Gain:: -

Power - Max:: 380mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 15mA, 5V

Current - Collector (Ic) (Max):: 50mA

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-143B

BFG67/X,215 FAQ

1.How can I place an order for BFG67/X,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFG67/X,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFG67/X,215 reliable?

The price and inventory of BFG67/X,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFG67/X,215 is usually 5 days.

3.What payment methods are accepted for BFG67/X,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFG67/X,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFG67/X,215?

BFG67/X,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFG67/X,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFG67/X,215?

For technical support, including BFG67/X,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFG67/X,215 requirements.

6.How does Aetrix verify that BFG67/X,215 is sourced from the original manufacturer or authorized distributors?

All BFG67/X,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFG67/X,215 meets industry standards.

7.What is the process for return or replacement of BFG67/X,215?

All BFG67/X,215 units undergo pre-shipment inspection (PSI). If there is an issue with BFG67/X,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFG67/X,215 part is unused and in its original packaging.

Return procedure for BFG67/X,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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