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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

NXP Semiconductors BFG97,115

Name: BFG97,115
Brand: NXP Semiconductors
SKU: BFG97,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFG97,115

Manufacturer:: NXP Semiconductors

Category:: Bipolar RF Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: BFG97,115.pdf

Description:: RF TRANS NPN 15V 5.5GHZ SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:3,339

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Product details

Overview

BFG97,115 from NXP Semiconductors is an NPN planar epitaxial wideband RF transistor in SOT223 package, rated for 5 GHz operation with 5.5 GHz transition frequency (f_T), 16 dB maximum unilateral power gain at 500 MHz, and 750 mV output voltage into 75 Ω load - designed specifically for MATV (Master Antenna Television) amplifier stages.

For engineers reviewing the BFG97,115 datasheet, BFG97,115 pinout, BFG97,115 application, or BFG97,115 equivalent, this page delivers verified DC gain (h_FE = 25–80), thermal resistance (R_{th j-s} = 50 K/W), intermodulation distortion performance (d_im ≥ −56 dB), collector-base voltage rating (V_CBO = 20 V), and SOT223 mechanical footprint details required for RF layout validation and MATV signal chain design.

Technical Context

The BFG97,115 employs a planar epitaxial structure optimized for broadband small-signal amplification up to 5 GHz, with low feedback capacitance (C_re = 1 pF) and emitter capacitance (C_e = 6.5 pF) enabling stable high-frequency operation. Its SOT223 package integrates a thermally enhanced collector tab for direct PCB heatsinking.

Designed for fixed-gain, low-distortion MATV front-end amplifiers, it operates at V_CE = 10 V and I_C = 70 mA under standard test conditions, delivering 750 mV output voltage at −60 dB input distortion level and 75 Ω termination - meeting DIN 45004B broadcast linearity requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	5.5 GHz typical - enables stable small-signal amplification up to 5 GHz band without oscillation risk
G_UM @ 500 MHz	16 dB typical - provides sufficient gain margin for single-stage MATV distribution amplifiers
V_O @ 75 Ω	750 mV typical - meets broadcast-level output drive capability for 75 Ω coaxial distribution
h_FE	25–80 at I_C = 70 mA, V_CE = 10 V - supports predictable DC biasing in Class-A amplifier designs
R_{th j-s}	50 K/W - allows direct thermal coupling from junction to solder point, critical for sustained RF power handling
d_im	≥ −56 dB at f(p+q−r) = 443.25 MHz - ensures compliance with MATV multi-channel intermodulation limits
V_CBO	20 V max - provides headroom for transient voltage spikes in cable TV signal paths

Pinout & Package

SOT223 plastic surface-mounted package with integrated heatsink tab; 4-lead configuration (pin 4 is collector tab, electrically connected to collector and thermally coupled to PCB copper pour).

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Primary current sink node; dual emitter pins (1 & 3) reduce series inductance for RF stability
2	Base	Control terminal for DC bias and RF input; requires impedance-matched 50 Ω source for minimal reflection
3	Emitter	Second emitter connection - used in parallel with pin 1 to lower emitter inductance and improve high-frequency gain flatness
4	Collector	Power output node and thermal interface; must be soldered to large copper area for heat dissipation and RF grounding

Key Features

Feature	Design Value
Wideband 5 GHz operation	Validated f_T = 5.5 GHz and G_UM > 12 dB at 800 MHz - supports full UHF MATV band (470–862 MHz) with margin
Dual-emitter configuration	Pins 1 and 3 both connected to emitter - reduces parasitic inductance and improves gain uniformity above 500 MHz
Low feedback capacitance	C_re = 1 pF - minimizes internal signal coupling, enhancing unconditional stability in 75 Ω amplifier designs
MATV-optimized linearity	d_im ≥ −56 dB and d₂ ≥ −53 dB - meets DIN 45004B second- and third-order distortion limits for multi-channel cable TV
Thermally enhanced SOT223	R_{th j-s} = 50 K/W with collector tab - enables 1 W total power dissipation when mounted on ≥2 cm² 2-oz copper

Applications

CATV Distribution Amplifier	MATV Headend Booster
Use Scenario: Amplifying downstream RF signals from cable provider headend to multiple dwelling units via 75 Ω coaxial trunk lines. IC Role / Device Role / Timing Role: Small-signal RF amplifier in first gain stage of active splitter/distribution module. Use Value: Delivers 750 mV output into 75 Ω while maintaining d_im ≥ −56 dB - preserves channel integrity across 80+ QAM carriers.	Use Scenario: Boosting weak antenna signals before splitting to individual apartment units in multi-tenant buildings. IC Role / Device Role / Timing Role: Low-noise, high-linearity gain block in MATV master amplifier rack. Use Value: 16 dB G_UM at 500 MHz and dual-emitter layout ensure flat gain response from 50–860 MHz without peaking.
UHF Band LNA	RF Signal Generator Output Stage
Use Scenario: Front-end amplification of terrestrial digital TV (DTT) signals in rooftop antenna systems operating 470–700 MHz. IC Role / Device Role / Timing Role: Single-transistor LNA with fixed bias, optimized for 75 Ω input/output matching. Use Value: C_e = 6.5 pF and C_re = 1 pF enable simple microstrip matching networks - reducing external component count by 30% vs. discrete alternatives.	Use Scenario: Final gain stage in benchtop RF signal generators requiring clean, broadband output up to 1 GHz. IC Role / Device Role / Timing Role: Linear driver amplifier preceding attenuator and output connector. Use Value: V_CEO = 15 V rating and 100 mA I_C limit allow safe operation into mismatched loads - preventing damage during user calibration errors.

CATV Distribution Amplifier

MATV Headend Booster

Use Scenario: Amplifying downstream RF signals from cable provider headend to multiple dwelling units via 75 Ω coaxial trunk lines.

IC Role / Device Role / Timing Role: Small-signal RF amplifier in first gain stage of active splitter/distribution module.

Use Value: Delivers 750 mV output into 75 Ω while maintaining d_im ≥ −56 dB - preserves channel integrity across 80+ QAM carriers.

Use Scenario: Boosting weak antenna signals before splitting to individual apartment units in multi-tenant buildings.

IC Role / Device Role / Timing Role: Low-noise, high-linearity gain block in MATV master amplifier rack.

Use Value: 16 dB G_UM at 500 MHz and dual-emitter layout ensure flat gain response from 50–860 MHz without peaking.

UHF Band LNA

RF Signal Generator Output Stage

Use Scenario: Front-end amplification of terrestrial digital TV (DTT) signals in rooftop antenna systems operating 470–700 MHz.

IC Role / Device Role / Timing Role: Single-transistor LNA with fixed bias, optimized for 75 Ω input/output matching.

Use Value: C_e = 6.5 pF and C_re = 1 pF enable simple microstrip matching networks - reducing external component count by 30% vs. discrete alternatives.

Use Scenario: Final gain stage in benchtop RF signal generators requiring clean, broadband output up to 1 GHz.

IC Role / Device Role / Timing Role: Linear driver amplifier preceding attenuator and output connector.

Use Value: V_CEO = 15 V rating and 100 mA I_C limit allow safe operation into mismatched loads - preventing damage during user calibration errors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF small-signal amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFG31	PNP complement with identical SOT223 package, f_T = 4.5 GHz, G_UM = 14 dB at 500 MHz, and V_EBO = 3 V	Used in complementary push-pull MATV amplifiers; not interchangeable in single-ended NPN designs	Select BFG31 only when designing symmetrical Class-AB output stages requiring matched NPN/PNP pairs.
MRF901	TO-92 packaged NPN RF transistor, f_T = 5 GHz, G_UM = 15 dB at 500 MHz, but R_{th j-a} = 200 K/W (no thermal tab)	Limited to low-duty-cycle or low-power applications due to inferior thermal performance	Choose MRF901 only for prototyping or space-constrained non-thermal designs - not for production MATV amplifiers.

Compared with BFG97,115, BFG31 offers complementary polarity for push-pull topologies but lacks identical gain/linearity specs, while MRF901 matches f_T but cannot sustain 1 W dissipation - making BFG97,115 the sole option for thermally demanding, high-linearity MATV distribution amplifiers.

Availability

BFG97,115 is available at Aetrix Electronics and suitable for CATV distribution amplifiers, MATV headend boosters, and UHF band LNAs requiring stable component supply, long-term obsolescence management, and traceable sourcing for broadcast infrastructure programs.

Supply support for BFG97,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in high-performance RF, analog, and mixed-signal solutions for automotive, industrial, and consumer applications.

The BFG97,115 belongs to NXP's legacy discrete RF transistor family engineered for broadcast-grade signal integrity in cable TV and MATV systems - emphasizing linearity, thermal robustness, and 75 Ω system compatibility.

FAQ

What is the maximum operating frequency supported by the BFG97,115?

The BFG97,115 has a typical transition frequency (f_T) of 5.5 GHz, validated at I_C = 70 mA and V_CE = 10 V. Its maximum unilateral power gain remains above 12 dB at 800 MHz, confirming reliable small-signal amplification across the full UHF MATV band (470–862 MHz). Operation beyond 1 GHz requires careful microstrip layout and thermal management.

Can the BFG97,115 be used in place of the BFG31?

No - the BFG97,115 is an NPN transistor, while the BFG31 is its PNP complement. They share the same SOT223 package and target MATV applications, but their polarity, bias requirements, and gain characteristics differ. Substituting BFG97,115 for BFG31 would reverse circuit functionality and likely cause failure. The BFG97,115 must be used only in NPN-configured amplifier stages.

What is the thermal resistance specification for the BFG97,115?

The BFG97,115 has a thermal resistance from junction to soldering point (R_{th j-s}) of 50 K/W, measured at the collector tab (pin 4). This value assumes direct soldering of the tab to ≥2 cm² of 2-ounce copper on the PCB. It enables 1 W total power dissipation when ambient temperature and board layout meet the derating curve in Figure 4 of the datasheet.

Does the BFG97,115 require external matching components for 75 Ω systems?

Yes - the BFG97,115 is not internally matched. Its S-parameters (S11, S22) show significant reactance at 75 Ω, requiring external microstrip or lumped-element matching networks. Figures 22–25 in the datasheet provide S-parameter plots at 50 Ω reference; adaptation to 75 Ω demands recalculated network values using tools like ADS or AWR, validated with the test circuit in Figure 2.

What is the intermodulation distortion performance of the BFG97,115 at 793.25 MHz?

At f(p+q−r) = 793.25 MHz, the BFG97,115 achieves d_im ≥ −53 dB (typical) when biased at I_C = 70 mA and V_CE = 10 V, with output voltage V_O = 700 mV into 75 Ω. This meets DIN 45004B requirements for multi-channel cable TV systems carrying >30 QAM channels, as confirmed in Figure 9 of the datasheet.

BFG97,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 15V

Frequency - Transition:: 5.5GHz

Noise Figure (dB Typ @ f):: -

Gain:: -

Power - Max:: 1W

DC Current Gain (hFE) (Min) @ Ic, Vce:: 25 @ 70mA, 10V

Current - Collector (Ic) (Max):: 100mA

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-73

BFG97,115 FAQ

1.How can I place an order for BFG97,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFG97,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFG97,115 reliable?

The price and inventory of BFG97,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFG97,115 is usually 5 days.

3.What payment methods are accepted for BFG97,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFG97,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFG97,115?

BFG97,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFG97,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFG97,115?

For technical support, including BFG97,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFG97,115 requirements.

6.How does Aetrix verify that BFG97,115 is sourced from the original manufacturer or authorized distributors?

All BFG97,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFG97,115 meets industry standards.

7.What is the process for return or replacement of BFG97,115?

All BFG97,115 units undergo pre-shipment inspection (PSI). If there is an issue with BFG97,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFG97,115 part is unused and in its original packaging.

Return procedure for BFG97,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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