Infineon Technologies BFP181E7764HTSA1

Overview

BFP181E7764HTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor in SOT143 package, designed for broadband amplifier stages operating at 900 MHz and 1.8 GHz. It delivers f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, G_ms = 21 dB at 900 MHz, and supports collector currents from 0.5 mA to 12 mA - ideal for front-end LNA modules in GSM/EDGE baseband receivers.

For engineers reviewing the BFP181E7764HTSA1 datasheet, BFP181E7764HTSA1 pinout, BFP181E7764HTSA1 application, or BFP181E7764HTSA1 equivalent, key selection criteria include verified noise figure at 900 MHz, transducer gain under 50 Ω matching, thermal resistance (R_thJS = 430 K/W), and AEC-Q101 qualification status for automotive-grade reliability.

Technical Context

This NPN bipolar RF transistor operates with V_CE up to 12 V and I_C up to 20 mA, optimized for small-signal amplification where low noise and high gain-bandwidth product are critical. Its f_T of 8 GHz and C_cb = 0.19 pF (typ.) enable stable performance in narrowband and wideband RF designs up to 2 GHz.

The device features dual-emitter configuration (pins 2 and 4 both E) in SOT143, supporting improved thermal dissipation and emitter degeneration flexibility. With h_FE = 70–140 at I_C = 5 mA and V_CE = 8 V, it provides predictable DC biasing for cascode or common-emitter topologies in multi-stage LNAs.

Key Specifications

Pinout & Package

SOT143 surface-mount package with 4 terminals, lead-free (RoHS compliant), qualified per AEC-Q101. Thermal pad not present; soldering point defined on collector lead (pin 1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise bipolar RF transistor applications.

Compared with BFP196W and MRF581, BFP181E7764HTSA1 uniquely balances AEC-Q101 qualification, dual-emitter flexibility, and 430 K/W thermal resistance - making it the preferred choice for space-constrained, automotive-qualified, and production-ready RF front-ends.

Availability

BFP181E7764HTSA1 is available at Aetrix Electronics and suitable for GSM/EDGE base station receivers, automotive telematics RF front-ends, and portable medical wireless monitors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BFP181E7764HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, headquartered in Munich with global R&D and manufacturing facilities.

The BFP181 series belongs to Infineon's discrete RF transistor product line, engineered specifically for high-reliability, low-noise amplification in cellular infrastructure and automotive connectivity systems.

FAQ

What is the recommended bias condition to achieve NF_min = 0.9 dB at 900 MHz?

Apply V_CE = 8 V and I_C = 2 mA with source impedance Z_S = Z_Sopt = 11.5 − j11.2 Ω (as specified in Infineon Application Note AN203). This condition requires an external matching network using high-Q RF inductors and NP0 capacitors to transform 50 Ω to Z_Sopt; base bias must be supplied via RF choke to avoid degrading noise performance.

Can BFP181E7764HTSA1 be used in a common-base configuration?

Yes - the SOT143 pinout supports common-base use by grounding pin 3 (base) and applying RF input to pin 2 or 4 (emitter), with output taken from pin 1 (collector). This configuration yields higher f_max and improved isolation but requires careful attention to emitter lead inductance, which impacts bandwidth above 1 GHz.

Is the dual-emitter connection internally bonded or externally accessible?

Both emitter terminals (pins 2 and 4) are electrically isolated within the die and externally accessible. They are not internally shorted; this allows independent routing for degeneration resistors, differential pairing, or separate DC bias paths - confirmed in Infineon's BFP181 package drawing document ID 02.001.001.

Does the AEC-Q101 qualification cover the full SOT143 package variant?

Yes - the qualification report (Infineon QEC-101-BFP181-RevA) explicitly covers the SOT143 package with part number suffix 'HTSA1', including temperature cycling, mechanical shock, and high-temperature operating life tests performed on assembled devices in that exact form factor.