Infineon Technologies BFP 182 E7764

Overview

BFP182 from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise, high-gain broadband amplification at collector currents from 1 mA to 20 mA; features f_T = 8 GHz, noise figure F = 0.9 dB at 900 MHz, and V_CEO = 12 V; used in 900 MHz cellular front-end LNA stages.

For engineers reviewing the BFP182 datasheet, BFP182 pinout, BFP182 application, or BFP182 equivalent, key selection criteria include noise performance at 900/1800 MHz, SOT143 thermal resistance (R_thJS ≤ 325 K/W), DC current gain (h_FE = 70–140), and ESD-sensitive handling requirements.

Technical Context

This RF transistor employs a planar epitaxial silicon structure with optimized emitter-base and collector-base junctions for broadband small-signal amplification. Its Gummel-Poon SPICE model includes verified parameters such as IS = 4.85 fA, BF = 84.1, CJC = 490 fF, and TF = 22.7 ps - enabling accurate AC and transient simulation up to 6 GHz.

The device operates with Z_Sopt and Z_Lopt matching for maximum stable gain (G_ms = 22 dB at 900 MHz) and maximum available gain (G_ma = 16.5 dB at 1.8 GHz); its package-equivalent circuit includes L_BI = 0.89 nH and C_BE = 189 fF for precise layout modeling.

Key Specifications

Pinout & Package

SOT143 (4-pin plastic surface-mount package) with exposed collector pad for thermal conduction; pin 1 = Collector, pin 2 = Emitter, pin 3 = Base, pin 4 = Emitter (dual-emitter configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFP196 and MRF581, the BFP182 uniquely balances 8 GHz f_T, 0.9 dB noise, dual-emitter SOT143 layout, and AEC-Q101 qualification - making it optimal for automotive and portable cellular front-ends where thermal symmetry and noise floor are critical.

Availability

BFP182 is available at Aetrix Electronics and suitable for GSM receiver LNAs, ISM-band transceiver front-ends, and automotive telematics RF modules requiring stable component supply and RoHS-compliant sourcing.

Supply support for BFP182 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global R&D and manufacturing infrastructure.

The BFP182 belongs to Infineon's RF bipolar transistor product line, designed specifically for high-linearity, low-noise amplification in 800–2500 MHz wireless infrastructure and mobile terminal applications.

FAQ

Is the BFP182 pin-compatible with the BFP181?

Yes - both use identical SOT143 pinout (1=C, 2=E, 3=B, 4=E) and share mechanical footprint, though BFP182 offers improved f_T (8 GHz vs. 6 GHz) and lower noise figure (0.9 dB vs. 1.1 dB at 900 MHz). No PCB redesign is needed for drop-in replacement in most LNA layouts.

What is the recommended bias network for 900 MHz LNA operation?

Infineon recommends a 10 kΩ base resistor (R_B) and 100 Ω emitter degeneration resistor (R_E) for I_C ≈ 3 mA, V_CE ≈ 8 V operation. The dual-emitter pins (2 and 4) should be tied together externally unless using asymmetric cascode configurations.

Does the BFP182 require special ESD handling beyond standard J-STD-020?

Yes - the BFP182 is explicitly marked ESD-sensitive (Class 1B per JEDEC JS-001), requiring grounded workstations, ionized air, and conductive foam storage. Handling without wrist straps or dissipative mats risks latent damage to the base-emitter junction, degrading h_FE and noise performance.

Can the BFP182 be used in Class-A power amplifier applications?

No - it is rated for P_tot = 250 mW at T_S ≤ 69 °C and optimized for small-signal gain, not power efficiency. Its G_ms and |S21|² values indicate linear operation only; attempting Class-A PA use risks thermal runaway due to insufficient heat dissipation in SOT143 at >100 mW output.