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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFP182RE7764HTSA1

Name: BFP182RE7764HTSA1
Brand: Infineon Technologies
SKU: BFP182RE7764HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFP182RE7764HTSA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SOT-143R

Datasheet:: BFP182RE7764HTSA1.pdf

Description:: RF TRANS NPN 12V 8GHZ SOT143R-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFP182RE7764HTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor designed for broadband amplifier stages in 900 MHz and 1.8 GHz cellular front-ends. It delivers f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, and G_ms = 22 dB at 900 MHz with V_CE = 8 V, I_C = 10 mA, and Z_S = Z_Sopt, enabling high-gain LNA designs in compact SOT143R packages.

For engineers reviewing the BFP182RE7764HTSA1 datasheet, BFP182RE7764HTSA1 pinout, BFP182RE7764HTSA1 application, or BFP182RE7764HTSA1 equivalent, key selection criteria include verified noise figure at 900/1800 MHz, SOT143R thermal resistance (R_thJS = 325 K/W), maximum stable gain under matched conditions, and AEC-Q101 qualification status for automotive-grade reliability.

Technical Context

This NPN bipolar transistor operates in common-emitter configuration with emitter-grounded biasing for RF amplification. Its f_T ≥ 6 GHz (typ. 8 GHz) and C_cb = 0.25 pF (typ.) support stable broadband gain up to 2 GHz while maintaining low input capacitance and high current gain (h_FE = 70–140).

The device uses a triple-metal, silicon planar process optimized for RF linearity and noise performance. Thermal design is constrained by R_thJS = 325 K/W and P_tot = 250 mW at T_S ≤ 69 °C, requiring careful PCB copper area allocation on the collector lead per AN077.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	8 GHz typical - enables stable gain extension beyond 1.8 GHz in narrowband and broadband LNAs
NF_min	0.9 dB at 900 MHz - sets baseline noise floor for cellular receiver sensitivity
G_ms	22 dB at 900 MHz - defines maximum stable power gain under source/load matching
V_CEO	12 V - limits supply rail headroom in single-supply RF amplifier stages
C_cb	0.25 pF typical - contributes to Miller effect suppression and bandwidth control
h_FE	100 typical at I_C = 10 mA - ensures predictable DC bias stability across production lots
R_thJS	325 K/W - dictates minimum copper area required on collector pad for thermal compliance

Pinout & Package

Package: SOT143R - surface-mount plastic package with four leads, optimized for RF performance and thermal dissipation via collector lead soldering point.

Pin/Terminal	Circuit Role	Design Meaning
1 (E)	Emitter	DC return path and RF ground reference; connected directly to ground plane for minimal inductance
2 (C)	Collector	Main RF output node and primary thermal path; requires dedicated copper pour per AN077
3 (E)	Emitter	Second emitter terminal for improved grounding and reduced parasitic inductance in high-frequency layout
4 (B)	Base	RF input control node; sensitive to layout parasitics due to low impedance drive requirement

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive ambient temperature range (−40 °C to +150 °C) and mechanical stress testing
RoHS-compliant packaging	Pb-free SOT143R construction meeting EU Directive 2011/65/EU without exemptions
Low C_cb / C_eb ratio	C_cb/C_eb ≈ 0.31 supports high reverse isolation and unconditional stability up to 2 GHz
Matched noise and gain contours	Z_Sopt defined for simultaneous NF_min and G_ms optimization at 900 MHz and 1.8 GHz
ESD-sensitive handling	Class 1C (≥1 kV HBM) - requires grounded workstation and ionized air during assembly

Applications

Cellular Base Station Receiver LNA

GSM/EDGE Handset Front-End

Use Scenario: Low-noise amplification of 900 MHz receive signals prior to downconversion in macrocell BTS receivers.

IC Role / Device Role / Timing Role: First-stage LNA transistor with matched Z_Sopt input network and 50 Ω output interface.

Use Value: 0.9 dB NF_min directly improves system noise figure and extends cell coverage radius by ~15%.

Use Scenario: High-linearity, low-current LNA in dual-band GSM/EDGE mobile handset transceivers.

IC Role / Device Role / Timing Role: Bias-stable NPN RF amplifier operating at I_C = 3 mA for battery life optimization.

Use Value: 22 dB G_ms at 900 MHz enables single-transistor gain staging without cascading, reducing component count.

Automotive Telematics Receiver

ISM Band 868 MHz Sensor Hub

Use Scenario: Receive-path amplification in AEC-Q101-compliant LTE-V2X or GNSS modules embedded in vehicle ECUs.

IC Role / Device Role / Timing Role: Qualified RF transistor for safety-critical wireless subsystems requiring extended temperature operation.

Use Value: Junction temperature rating of 150 °C and qualification report ensure functional integrity under hood thermal cycling.

Use Scenario: Low-power wideband amplifier in battery-operated industrial sensor nodes operating in 868 MHz ISM band.

IC Role / Device Role / Timing Role: Single-transistor LNA biased at I_C = 1–5 mA to balance NF and current consumption.

Use Value: 0.25 pF C_cb minimizes Miller feedback, enabling stable 10–15 dB gain with simple microstrip matching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise bipolar RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP196F	f_T = 10 GHz, NF_min = 1.1 dB @ 1.8 GHz, SOT343 package	Higher frequency capability but higher noise at 900 MHz; smaller footprint increases layout sensitivity	Prefer for >2 GHz designs where gain-bandwidth trade-off favors f_T over NF_min
MRF581	f_T = 5 GHz, NF_min = 1.0 dB @ 900 MHz, TO-92 package	Through-hole mounting, higher R_thJA, no AEC-Q101 qualification	Select only for non-automotive prototyping or legacy through-hole systems requiring manual assembly

Compared with BFP182RE7764HTSA1, BFP196F offers higher f_T at the cost of elevated noise at sub-1 GHz, while MRF581 provides comparable noise but lacks automotive qualification and thermal performance - making the BFP182R optimal for production-grade 900 MHz LNAs needing reliability and manufacturability.

Availability

BFP182RE7764HTSA1 is available at Aetrix Electronics and suitable for cellular infrastructure receivers, automotive telematics modules, and ISM-band sensor hubs requiring stable component supply, RoHS compliance, and AEC-Q101 validation.

Supply support for BFP182RE7764HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and RF solutions, headquartered in Munich.

The BFP182R belongs to Infineon's RF bipolar transistor product line, engineered specifically for high-performance, low-noise amplification in 800–2000 MHz wireless infrastructure and automotive communication systems.

FAQ

What is the recommended bias condition for minimum noise figure at 900 MHz?

The datasheet specifies NF_min = 0.9 dB at I_C = 3 mA, V_CE = 6 V, and Z_S = Z_Sopt. This requires an external input matching network tuned to Z_Sopt ≈ 12 + j15 Ω (typical), not 50 Ω. DC blocking and bias decoupling must preserve this impedance transformation.

Is the BFP182RE7764HTSA1 suitable for 5G sub-6 GHz applications?

No - its f_T = 8 GHz and verified AC characteristics extend only to 1.8 GHz. At 3.5 GHz, gain drops significantly and noise figure degrades beyond 2.5 dB. For sub-6 GHz, Infineon's BFP640 or BFP740 series are specified alternatives with f_T > 20 GHz.

How does the dual-emitter configuration (Pins 1 and 3) impact layout?

The two emitter terminals reduce series inductance by providing parallel RF ground paths. Layout best practice is to connect both pins directly to the same low-inductance ground plane using separate short traces - splitting them or routing one to a different net introduces imbalance and degrades NF and gain flatness above 1 GHz.

Does the AEC-Q101 qualification cover full temperature range operation?

Yes - qualification includes temperature cycling (−40 °C to +150 °C), high-temperature operating life (1000 hrs at 150 °C), and mechanical shock/vibration tests. Electrical parameters are guaranteed across −40 °C to +125 °C operating range; junction limit remains 150 °C.

BFP182RE7764HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SOT-143R

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 12V

Frequency - Transition:: 8GHz

Noise Figure (dB Typ @ f):: 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Gain:: 22dB

Power - Max:: 250mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 10mA, 8V

Current - Collector (Ic) (Max):: 35mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT143-4-1

BFP182RE7764HTSA1 FAQ

1.How can I place an order for BFP182RE7764HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFP182RE7764HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFP182RE7764HTSA1 reliable?

The price and inventory of BFP182RE7764HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP182RE7764HTSA1 is usually 5 days.

3.What payment methods are accepted for BFP182RE7764HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP182RE7764HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFP182RE7764HTSA1?

BFP182RE7764HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFP182RE7764HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFP182RE7764HTSA1?

For technical support, including BFP182RE7764HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP182RE7764HTSA1 requirements.

6.How does Aetrix verify that BFP182RE7764HTSA1 is sourced from the original manufacturer or authorized distributors?

All BFP182RE7764HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP182RE7764HTSA1 meets industry standards.

7.What is the process for return or replacement of BFP182RE7764HTSA1?

All BFP182RE7764HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFP182RE7764HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFP182RE7764HTSA1 part is unused and in its original packaging.

Return procedure for BFP182RE7764HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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