Infineon Technologies BFP182WE6327

Overview

BFP182WE6327 from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise, high-gain broadband amplification at collector currents from 1 mA to 20 mA; features f_T = 8 GHz, noise figure F = 0.9 dB at 900 MHz, V_CEO = 12 V, P_tot = 250 mW, and SOT343 package; used in 900 MHz cellular front-end LNA stages.

For engineers reviewing the BFP182WE6327 datasheet, BFP182WE6327 pinout, BFP182WE6327 application, or BFP182WE6327 equivalent, key selection criteria include verified noise performance at 900 MHz/1.8 GHz, S-parameter-based gain stability (G_ms = 22 dB), C_cb = 0.34 pF typical, thermal resistance R_thJS ≤ 235 K/W, and AEC-Q101 qualification for automotive RF modules.

Technical Context

This RF transistor employs a planar epitaxial silicon structure with integrated emitter ballasting for stable high-frequency operation. Its Gummel-Poon SPICE model includes validated parameters such as IS = 4.85 fA, BF = 84.1, C_jc = 490.25 fF, and TF = 22.72 ps - enabling accurate large-signal simulation up to 6 GHz.

The device delivers broadband small-signal gain via optimized parasitic control: L_BI = 0.43 nH, L_BO = 0.47 nH, and C_BE = 68 fF define its high-frequency impedance behavior; matching networks are designed around Z_Sopt/Z_Lopt for maximum stable gain at 900 MHz and 1.8 GHz.

Key Specifications

Pinout & Package

Package: SOT343 - surface-mount plastic package with four leads, 1.3 mm × 1.1 mm footprint, 0.95 mm height, and lead pitch of 0.65 mm; RoHS-compliant, Pb-free termination.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFP182WE6327, BFP196W trades marginal noise degradation for wider bandwidth and higher breakdown voltage, while MRF581 sacrifices thermal and noise performance for smaller package size - making BFP182WE6327 optimal for cost-sensitive, thermally constrained 900 MHz LNA designs requiring AEC-Q101 compliance.

Availability

BFP182WE6327 is available at Aetrix Electronics and suitable for cellular infrastructure, automotive telematics, and ISM-band wireless sensor applications requiring stable component supply, RoHS-compliant packaging, and AEC-Q101 reliability assurance.

Supply support for BFP182WE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and RF solutions, with global R&D and manufacturing infrastructure.

BFP182WE6327 belongs to Infineon's BFP family of silicon RF transistors engineered for high-performance, low-cost broadband amplification in consumer, industrial, and automotive wireless systems up to 2 GHz.

FAQ

What is the recommended bias condition for minimum noise figure?

For minimum noise figure (0.9 dB), bias BFP182WE6327 at I_C = 3 mA and V_CE = 6 V with source impedance matched to Z_Sopt = 21 − j12 Ω (typical at 900 MHz). This condition is validated in the datasheet's AC characteristics table and supported by the provided SPICE model.

Is BFP182WE6327 pin-compatible with other SOT343 RF transistors?

No - although physically packaged in SOT343, BFP182WE6327 uses a unique 1=E, 2=C, 3=E, 4=B pinout. Devices like BFP196W share the same outline but differ in internal connection; direct replacement requires verification of both pin mapping and S-parameter behavior.

Does this transistor require external neutralization for stability?

Neutralization is not required for unconditional stability up to 1.8 GHz when operated at I_C = 10 mA, V_CE = 8 V with Z_S = Z_L = 50 Ω. The datasheet confirms |S11| < 0.2 and |S22| < 0.2 under these conditions, and the dual-emitter layout inherently suppresses feedback capacitance.

How does AEC-Q101 qualification impact board-level design?

AEC-Q101 qualification mandates design allowances for −40 °C to +125 °C operation, including derated power (P_tot ≤ 180 mW above 85 °C), controlled ESD handling (HBM ≥ 2 kV), and board layout accommodating thermal expansion mismatch between SOT343 leads and FR4 substrates.