Infineon Technologies BFP182WE6327HTSA1

Overview

BFP182WE6327HTSA1 from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise, high-gain broadband amplification at collector currents from 1 mA to 20 mA; features f_T = 8 GHz, noise figure F = 0.9 dB at 900 MHz, V_CEO = 12 V, P_tot = 250 mW, and SOT343 package; used in 900 MHz cellular front-end LNA stages.

For engineers reviewing the BFP182WE6327HTSA1 datasheet, BFP182WE6327HTSA1 pinout, BFP182WE6327HTSA1 application, or BFP182WE6327HTSA1 equivalent, key selection criteria include verified noise figure at 900 MHz, transition frequency under 15 mA bias, C_cb and C_eb capacitance values, thermal resistance R_thJS ≤ 235 K/W, and AEC-Q101 qualification status.

Technical Context

This device operates as a single NPN RF transistor with Gummel-Poon SPICE model parameters fully extracted and validated up to 6 GHz. Its internal parasitic network includes L_BI = 0.43 nH, C_BE = 68 fF, and C_CE = 232 fF, enabling accurate small-signal modeling in RF design tools.

It supports stable operation under pulsed conditions (D = 0) with R_thJS decreasing to 0.005 K/W at t_p = 100 ns, and delivers maximum stable power gain G_ms = 22 dB and maximum available gain G_ma = 16.5 dB at 900 MHz and 1.8 GHz respectively under matched Z_Sopt/Z_Lopt conditions.

Key Specifications

Pinout & Package

Package: SOT343 - surface-mount plastic package with four terminals, 1.3 mm × 1.1 mm footprint, 0.95 mm height, RoHS-compliant lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFP196W and MRF581, BFP182WE6327HTSA1 offers optimal balance of 0.9 dB noise figure, 8 GHz f_T, and SOT343 miniaturization for space-constrained 900 MHz receiver designs requiring AEC-Q101 compliance.

Availability

BFP182WE6327HTSA1 is available at Aetrix Electronics and suitable for cellular handset front-end, automotive telematics receivers, and GPS L1 band preamplifier designs requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for BFP182WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, headquartered in Munich.

The BFP182W series belongs to Infineon's high-frequency discrete transistor product line, designed specifically for low-noise, broadband RF amplification in wireless infrastructure and mobile terminal applications.

FAQ

What is the recommended DC bias condition for minimum noise figure?

The datasheet specifies F = 0.9 dB at I_C = 3 mA, V_CE = 6 V, and Z_S = Z_Sopt. This condition requires external source impedance matching to approximately 25 + j15 Ω using a microstrip stub or lumped LC network - not 50 Ω. Deviation increases noise by ≥0.3 dB.

Is the SOT343 package thermally adequate for continuous 250 mW operation?

Yes, but only if soldered to a PCB with ≥2 cm² copper pour connected to pin 2 (collector) and pins 1/3 (emitters). The R_thJS ≤ 235 K/W rating assumes direct thermal conduction from solder joint to board; insufficient copper area raises junction temperature beyond 150 °C at full P_tot.

Does the dual-emitter configuration require separate external connections?

No - pins 1 and 3 are internally bonded to the same emitter region and must be shorted externally on the PCB. Using them as independent nodes violates the device's parasitic model and degrades gain flatness above 1 GHz due to unbalanced current distribution.

Can this transistor be used in Class-C or switching applications?

No - the BFP182WE6327HTSA1 is characterized and optimized exclusively for linear Class-A RF amplification. Its h_FE roll-off above 20 mA and lack of specified switching parameters (t_on/t_off, storage time) make it unsuitable for digital or PA switching use cases.