Infineon Technologies BFP182WH6327XTSA1

Overview

BFP182WH6327XTSA1 from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise, high-gain broadband amplification at collector currents from 1 mA to 20 mA; features f_T = 8 GHz, noise figure F = 0.9 dB at 900 MHz, V_CEO = 12 V, P_tot = 250 mW, and SOT343 package; used in 900 MHz cellular front-end LNA stages.

For engineers reviewing the BFP182WH6327XTSA1 datasheet, BFP182WH6327XTSA1 pinout, BFP182WH6327XTSA1 application, or BFP182WH6327XTSA1 equivalent, key selection criteria include noise figure at 900 MHz, transition frequency, DC current gain (h_FE = 70–140), thermal resistance (R_thJS ≤ 235 K/W), and RoHS-compliant SOT343 footprint compatibility.

Technical Context

This device operates as a single NPN RF transistor with Gummel-Poon SPICE model parameters fully extracted and validated up to 6 GHz. Its internal parasitic network includes L_BI = 0.43 nH, C_BE = 68 fF, and C_CB = 46 fF, enabling accurate small-signal modeling for LNA design.

Designed for broadband operation, it delivers maximum stable power gain (G_ms) of 22 dB at 900 MHz and transducer gain |S₂₁|² = 18 dB under 50 Ω conditions - critical for impedance-matched RF front-ends in mobile handsets and IoT transceivers.

Key Specifications

Pinout & Package

Package: SOT343 - surface-mount, 4-pin plastic package with exposed thermal pad; dimensions 2.1 mm × 2.1 mm × 0.9 mm; RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Compared with BFP196WH6327XTSA1 and MRF581W, BFP182WH6327XTSA1 offers optimal balance of ultra-low noise (0.9 dB), AEC-Q101 compliance, and SOT343 size - making it preferred for space-constrained automotive and handset LNAs where NF is primary spec.

Availability

BFP182WH6327XTSA1 is available at Aetrix Electronics and suitable for cellular handset LNA design, automotive keyless entry receivers, and ISM-band transceiver front-ends requiring stable component supply and full traceability.

Supply support for BFP182WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global R&D and manufacturing infrastructure.

BFP182WH6327XTSA1 belongs to Infineon's BFP series of silicon RF transistors, engineered specifically for low-noise, high-linearity amplification in 300 MHz–2.5 GHz wireless infrastructure and mobile terminal applications.

FAQ

What is the recommended bias condition for minimum noise figure?

For minimum noise figure (0.9 dB), bias at I_C = 3 mA and V_CE = 6 V with source impedance Z_S = Z_Sopt = 25 + j15 Ω, as characterized in the official Infineon datasheet revision 2007-04-20. External matching must replicate this complex impedance using microstrip or lumped LC networks.

Is the SOT343 package thermally enhanced?

Yes - the SOT343 package includes an exposed thermal pad on the bottom side, and R_thJS ≤ 235 K/W is measured from junction to soldering point. Optimal thermal performance requires ≥20 mm² of 2-oz copper connected to the pad via ≥4 thermal vias to inner ground planes.

Does BFP182WH6327XTSA1 support pulsed RF operation?

Yes - the device supports pulsed operation with duty cycle D = 0 and pulse width t_p ≥ 100 ns, where peak power can reach 3× DC-rated P_tot (750 mW). Derating curves in datasheet Figure 5 define exact limits based on t_p and ambient temperature.

How does the dual-emitter configuration affect PCB layout?

The dual-emitter pins (1 and 3) must be shorted together with minimal trace length (<0.5 mm) and connected to RF ground via separate vias. This reduces common-emitter inductance and improves S₁₁ below 1 GHz - critical for broadband input match stability.