Infineon Technologies BFP183E7764HTSA1

Overview

BFP183E7764HTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for broadband amplifier stages in 900 MHz and 1.8 GHz cellular infrastructure and wireless handsets, featuring f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, V_CEO = 12 V, I_C = 65 mA max, and SOT143 package.

For engineers reviewing the BFP183E7764HTSA1 datasheet, BFP183E7764HTSA1 pinout, BFP183E7764HTSA1 application, or BFP183E7764HTSA1 equivalent, key selection criteria include noise figure at 900 MHz/1.8 GHz, transducer gain under 50 Ω matching, thermal resistance (R_thJS = 295 K/W), DC current gain (h_FE = 70–140), and AEC-Q101 qualification status.

Technical Context

This NPN bipolar RF transistor operates with collector-emitter voltage up to 12 V and supports collector currents from 2 mA to 30 mA for low-noise amplification. Its transition frequency of 8 GHz and minimum noise figure of 0.9 dB at 900 MHz enable high-gain, broadband performance in front-end receiver paths.

The device uses a 4-pin SOT143 package with dual emitter configuration (Pins 2 and 4 both E), enabling improved thermal dissipation and stable biasing. C_cb = 0.3 pF (typ), C_eb = 1.1 pF (typ), and C_ce = 0.27 pF (typ) support wideband impedance matching up to 2 GHz.

Key Specifications

Pinout & Package

Package: SOT143 - surface-mount plastic package with 4 leads, designed for RF layout integrity and thermal management via collector lead soldering point.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise bipolar RF transistor applications.

Compared with BFP183E7764HTSA1, BFP196F trades 0.2 dB higher noise for 2 GHz higher f_T and smaller footprint, while MRF581 offers legacy compatibility but sacrifices thermal performance and automotive qualification.

Availability

BFP183E7764HTSA1 is available at Aetrix Electronics and suitable for GSM base station LNAs, ISM band receiver front-ends, and automotive telematics GNSS modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for BFP183E7764HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, headquartered in Munich.

The BFP183 belongs to Infineon's discrete RF bipolar transistor product line, engineered for high-frequency, low-noise amplification in cellular infrastructure, wireless handsets, and automotive connectivity systems.

FAQ

What is the recommended bias condition for minimum noise figure at 900 MHz?

For NF_min = 0.9 dB at 900 MHz, bias the BFP183E7764HTSA1 at I_C = 5 mA and V_CE = 8 V with source impedance Z_S = Z_Sopt ≈ 12 + j15 Ω. This condition is verified in the datasheet's AC characteristics table and requires external matching networks to synthesize Z_Sopt from 50 Ω systems.

Does the dual-emitter configuration require separate grounding paths on the PCB?

Yes - Pins 2 and 4 (both E) must be individually routed to low-inductance RF ground planes. Shared vias or daisy-chained traces introduce parasitic inductance that degrades stability and noise performance above 1 GHz. The dual-emitter design assumes symmetrical thermal and electrical paths to maximize gain flatness.

Is the AEC-Q101 qualification report publicly accessible?

Yes - Infineon provides the AEC-Q101 qualification report for BFP183 upon request through authorized distributors or direct technical support. It covers HTGB, HTRB, temperature cycling, and ESD testing results, confirming compliance for automotive under-hood applications up to 105 °C ambient.

How does R_thJS = 295 K/W translate to practical board-level thermal design?

R_thJS = 295 K/W means that for every 100 mW of dissipated power, the junction-to-solder-point temperature rise is ~29.5 °C. To maintain T_J ≤ 150 °C at T_S = 76 °C, maximum continuous P_tot is limited to 250 mW - consistent with the datasheet's absolute maximum rating and derating curve.