Infineon Technologies BFP183WE6327BTSA1

Overview

BFP183WE6327BTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor in SOT343 package, designed for broadband amplifier stages operating at 900 MHz and 1.8 GHz. It delivers f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz, and G_ms = 22 dB at 900 MHz with I_C = 15 mA, V_CE = 8 V. Used in cellular front-end LNA modules requiring high gain and low noise under 30 mA bias.

For engineers reviewing the BFP183WE6327BTSA1 datasheet, BFP183WE6327BTSA1 pinout, BFP183WE6327BTSA1 application, or BFP183WE6327BTSA1 equivalent, key selection criteria include minimum noise figure at 900 MHz, transition frequency, maximum stable power gain, collector-emitter breakdown voltage (V_CEO = 12 V), and SOT343 thermal resistance (R_thJS = 205 K/W).

Technical Context

This NPN bipolar RF transistor operates in common-emitter configuration with emitter-grounded AC biasing. Its f_T of 8 GHz and C_cb = 0.34 pF (typ.) enable stable broadband amplification up to 1.8 GHz while maintaining low noise performance.

The device supports DC bias ranges from I_C = 2 mA to 30 mA and V_CE = 8 V, with h_FE = 70–140 and C_eb = 1.1 pF (typ.), making it suitable for impedance-matched 50 Ω transceiver front-ends where gain flatness and noise optimization are critical.

Key Specifications

Pinout & Package

SOT343 (4-pin plastic leadless package) with visible leads, RoHS-compliant and halogen-free. Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Emitter (dual emitter), Pin 4 = Base. Dual-emitter configuration supports balanced input or cascode biasing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise bipolar RF transistor applications.

Compared with BFP183WE6327BTSA1, BFP196FESD trades 0.2 dB NF for 2 GHz higher f_T, while MRF581W offers marginally lower noise but lacks dual-emitter flexibility and has different thermal behavior due to SOT323 packaging.

Availability

BFP183WE6327BTSA1 is available at Aetrix Electronics and suitable for GSM/EDGE receiver modules, automotive telematics RF front-ends, and ISM-band wireless metering systems requiring stable component supply with AEC-Q101 qualification and low-noise RF performance.

Supply support for BFP183WE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949.

The BFP183W series belongs to Infineon's discrete RF transistor product line, engineered specifically for high-gain, low-noise amplifier stages in cellular, automotive, and industrial wireless infrastructure applications.

FAQ

What is the recommended DC bias condition for achieving NF_min = 0.9 dB?

The minimum noise figure is achieved at I_C = 5 mA and V_CE = 8 V with source impedance Z_S = Z_Sopt. This condition requires external matching network design using the provided Z_Sopt values (0.9 + j1.1 Ω at 900 MHz). Operating outside this bias point increases NF by ≥0.3 dB.

Can BFP183WE6327BTSA1 be used in cascode configuration?

Yes - the dual-emitter SOT343 pinout (Pins 1 and 3 both emitter) enables direct implementation of cascode topology. Pin 1 serves as the input transistor emitter, Pin 3 as the cascode transistor emitter, allowing improved reverse isolation and higher output impedance without additional die area.

Is thermal derating required above 58 °C board temperature?

Yes - total power dissipation must be linearly derated above TS = 58 °C using R_thJS = 205 K/W. At TS = 80 °C, maximum allowable P_tot drops to 350 mW; at TS = 100 °C, it falls to 250 mW. Derating curve is published in Infineon Application Note AN077.

Does this part support pulse operation?

Yes - permissible pulse load data shows P_totmax/P_totDC reaches 5× for t_p = 10 µs (D = 0). For 100 µs pulses, peak power can reach 2× DC rating. Pulse operation requires strict adherence to the R_thJS vs. t_p curve and junction temperature limits (T_J ≤ 150 °C).