Infineon Technologies BFP193WH6327XTSA1

Overview

BFP193WH6327XTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for high-gain, broadband amplification up to 2 GHz. It delivers f_T = 8 GHz, NF_min = 1 dB at 900 MHz, and G_ma = 20.5 dB at 900 MHz in SOT343 package, serving as the active gain element in cellular front-end LNA stages and GPS receiver IF amplifiers.

For engineers reviewing the BFP193WH6327XTSA1 datasheet, BFP193WH6327XTSA1 pinout, BFP193WH6327XTSA1 application, or BFP193WH6327XTSA1 equivalent, key selection criteria include verified noise figure at 900 MHz, transducer gain under 50 Ω matching, third-order intercept point (IP3 = 29.5 dBm), and thermal resistance (R_thJS = 145 K/W) for RF board layout validation.

Technical Context

This NPN bipolar transistor operates in common-emitter configuration with DC current gain (h_FE) of 70–140 at I_C = 30 mA and V_CE = 8 V. Its RF performance is characterized under matched-impedance conditions (Z_S = Z_Sopt, Z_L = Z_Lopt) for maximum available gain and minimum noise figure.

The device uses epitaxial base technology enabling high f_T and low C_cb (0.63 pF typ.) and C_eb (2.25 pF typ.), critical for stable broadband operation from 0.2 MHz to 1.8 GHz. ESD sensitivity (HBM Class 2) mandates strict handling per AEC-Q101 qualification requirements.

Key Specifications

Pinout & Package

Package: SOT343 - surface-mount plastic package with four terminals, footprint compatible with JEDEC MO-229 standard, rated for reflow soldering per IPC/JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFP193WH6327XTSA1, BFP181W trades 2 dB gain and 0.2 dB NF for lower power dissipation, while MRF581 offers higher f_T but lacks the dual-emitter thermal path critical for sustained 30 mA operation in compact modules.

Availability

BFP193WH6327XTSA1 is available at Aetrix Electronics and suitable for GSM/UMTS front-end design, GPS/GLONASS receiver development, and ISM-band wireless metering requiring stable component supply across automotive and industrial production cycles.

Supply support for BFP193WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with headquarters in Munich and global fabrication and testing facilities.

The BFP193W belongs to Infineon's RF bipolar transistor product line, engineered specifically for high-linearity, low-noise amplification in sub-2 GHz wireless infrastructure and mobile terminal applications.

FAQ

What is the recommended bias condition for minimum noise figure?

For NF_min = 1 dB at 900 MHz, operate at I_C = 10 mA and V_CE = 8 V with source impedance Z_S = Z_Sopt = 35 + j15 Ω. This condition is validated in the datasheet's AC characteristics table and requires external matching network synthesis using measured S-parameters.

Can BFP193WH6327XTSA1 be used in Class-A power amplifier configurations?

Yes - it supports continuous-wave Class-A operation up to I_C = 30 mA and V_CE = 8 V, delivering P-1dB = 13 dBm at 900 MHz. Thermal design must ensure junction temperature remains ≤150°C using the published R_thJS = 145 K/W and PCB copper area guidelines.

Is the SOT343 package lead-free and RoHS-compliant?

Yes - BFP193WH6327XTSA1 uses a Pb-free SOT343 package with matte tin-plated leads, fully compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1).

How does the dual-emitter configuration improve thermal performance?

Pins 1 and 3 are internally connected emitters, allowing both to serve as low-inductance RF ground paths and increasing effective thermal conduction area. This reduces effective R_thJS by ~12% compared to single-emitter SOT343 variants under identical PCB layout conditions.