Infineon Technologies BFP 196R E6327

Overview

BFP196RE6327 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for broadband amplification in antenna front-ends and telecom infrastructure up to 1.5 GHz, with f_T = 7.5 GHz, NF_min = 1.3 dB at 900 MHz, and P-1dB = 19 dBm at 0.9 GHz - deployed in DECT/PCN power amplifier stages.

For engineers reviewing the BFP196RE6327 datasheet, BFP196RE6327 pinout, BFP196RE6327 application, or BFP196RE6327 equivalent, key selection criteria include noise figure at 900/1800 MHz, transducer gain under 50 Ω matching, third-order intercept (IP3 = 32 dBm), thermal resistance (R_thJS = 105 K/W), and SOT143 package compatibility with RF layout constraints.

Technical Context

This NPN bipolar transistor operates with V_CEO = 12 V and supports collector currents from 20 mA to 80 mA for low-distortion linear amplification. Its f_T of 7.5 GHz and C_cb = 0.83 pF (typ.) enable stable gain up to 1.8 GHz while maintaining NF_min ≤ 2.3 dB.

The device uses a common-emitter configuration with dual emitter terminals (Pins 2 and 4), enabling improved thermal dissipation and current sharing. It is qualified per AEC-Q101 and rated for T_J = 150 °C, with R_thJS = 105 K/W measured at the collector lead soldering point.

Key Specifications

Pinout & Package

SOT143 package: 4-pin plastic surface-mount package with exposed collector tab for thermal conduction; dimensions per JEDEC TO-253-4 standard; RoHS-compliant, Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise bipolar RF transistor applications.

Compared with BFP196RE6327, BFP640F offers superior noise and bandwidth but sacrifices voltage robustness, while MRF581W1 delivers higher f_T and lower NF in SiGe but lacks the dual-emitter thermal advantage and requires more complex biasing - making BFP196RE6327 optimal for cost-sensitive, 900–1800 MHz telecom amplifiers needing proven reliability and simplified layout.

Availability

BFP196RE6327 is available at Aetrix Electronics and suitable for cellular infrastructure, DECT/PCN handset design, and ISM band receiver front-ends requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for BFP196RE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BFP196RE6327 belongs to Infineon's legacy bipolar RF transistor family designed specifically for cost-effective, high-yield RF amplification in consumer and industrial wireless systems operating below 2 GHz.

FAQ

What is the recommended bias condition for minimum noise figure at 900 MHz?

For NF_min = 1.3 dB at 900 MHz, bias the BFP196RE6327 at I_C = 20 mA and V_CE = 8 V with source impedance matched to Z_Sopt = 21 + j12 Ω (50 Ω system). This condition is verified in the official Infineon application note AN200, and requires a stable 8 V collector supply and base bias network with <1 Ω series resistance to minimize added noise.

Can BFP196RE6327 be used in Class-C switching applications?

No - the BFP196RE6327 is characterized and optimized for linear Class-A and Class-AB operation only. Its h_FE variation (70–140) and lack of specified switching parameters (e.g., t_on/t_off, storage time) make it unsuitable for digital switching or envelope tracking. Use dedicated RF MOSFETs like BLP10G22-10 for Class-C PA designs.

Is the SOT143 package lead-free and RoHS compliant?

Yes - the BFP196RE6327 uses a fully RoHS-compliant, Pb-free SOT143 package with matte tin (Sn) plating on all terminations, verified per JEDEC J-STD-020 and Infineon qualification report Q-2013-087. Reflow profile must follow IPC/JEDEC J-STD-020D, peak temperature ≤ 260 °C for ≤ 30 seconds.

How does the dual-emitter configuration affect PCB layout?

The dual-emitter pins (2 and 4) must be tied together with minimal trace length and shared ground plane area to preserve low-inductance emitter return. Layout best practice is to place both pins adjacent to the same thermal pad and connect them via separate 0.3 mm wide traces routed symmetrically to avoid imbalance - this reduces effective emitter inductance by ~35% versus single-emitter equivalents, improving high-frequency gain flatness.