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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFP 196R E6501

Name: BFP 196R E6501
Brand: Infineon Technologies
SKU: BFP 196R E6501
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFP 196R E6501

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: TO-253-4, TO-253AA

Datasheet:: BFP 196R E6501.pdf

Description:: RF TRANS NPN 12V 7.5GHZ SOT143-4

Quantity:: RFQ Add To RFQ list

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Inventory:9,689

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Product details

Overview

BFP196R E6501 from Infineon Technologies is a low-noise silicon bipolar RF transistor designed for broadband amplifier stages in antenna front-ends and telecom infrastructure up to 1.5 GHz; features f_T = 7.5 GHz, NF_min = 1.3 dB at 900 MHz, V_CEO = 12 V, I_C = 150 mA, and SOT143 package.

For engineers reviewing the BFP196R E6501 datasheet, BFP196R E6501 pinout, BFP196R E6501 application, or BFP196R E6501 equivalent, key selection criteria include noise figure at 900 MHz, transducer gain under 50 Ω matching, third-order intercept point (IP3), thermal resistance (R_thJS = 105 K/W), and AEC-Q101 qualification status for automotive-grade reliability.

Technical Context

This NPN bipolar transistor operates in common-emitter configuration with emitter-grounded or base-grounded biasing options; its high f_T and low C_cb (0.83 pF typ.) support stable broadband amplification from 0.2 MHz to 1.8 GHz.

Designed for Class-A small-signal amplification, it delivers G_ma = 16.5 dB at 900 MHz and IP3 = 32 dBm under matched 50 Ω terminations-enabling linear operation in DECT/PCN power amplifier stages and low-distortion LNA designs.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	7.5 GHz typical - enables stable gain up to 1.8 GHz with margin for layout parasitics
NF_min	1.3 dB at 900 MHz - critical for antenna pre-amplifier sensitivity in GSM/DECT receivers
G_ma	16.5 dB at 900 MHz - defines maximum available gain under conjugate matching
IP3	32 dBm at 0.9 GHz - supports high linearity in multi-carrier base station front-ends
R_thJS	105 K/W - limits junction temperature rise to ≤150 °C at P_tot = 700 mW with proper PCB copper area
V_CEO	12 V - sets maximum supply rail for single-stage RF amplifiers without breakdown risk
I_C max	150 mA - defines DC bias headroom for 50–80 mA operating points used in low-noise design

Pinout & Package

Package: SOT143 - surface-mount plastic package with four leads, optimized for RF performance and thermal dissipation via collector lead soldering point.

Pin/Terminal	Circuit Role	Design Meaning
1	Collector	Main current output terminal; connected to RF output matching network and heatsinking trace
2	Emitter	AC ground reference; tied directly to low-inductance ground plane for stability
3	Base	Input control node; requires DC bias network and RF input coupling capacitor
4	Emitter	Second emitter connection for improved thermal path and reduced emitter inductance

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive ambient temperature range (−65 °C to +150 °C) and thermal cycling
RoHS-compliant packaging	Pb-free SOT143 construction meets EU Directive 2011/65/EU without exemption waivers
Low C_cb (0.83 pF typ.)	Minimizes Miller effect, enabling wideband stability without neutralization networks
High h_FE (70–140)	Ensures consistent DC bias setting across production lots at I_C = 50 mA, V_CE = 8 V
ESD-sensitive handling	Class H2 (≥2 kV HBM); requires grounded workstation and anti-static packaging during assembly

Applications

Cellular Base Station Front-End

DECT Cordless Phone PA

Use Scenario: Low-noise amplification of 900 MHz receive signals in macrocell BTS antenna interface modules.

IC Role / Device Role / Timing Role: First-stage LNA with Z_Sopt matching to achieve NF_min = 1.3 dB and G_ma = 16.5 dB.

Use Value: Enables receiver sensitivity improvement by ≥2 dB over higher-NF alternatives, extending cell coverage radius.

Use Scenario: Final-stage power amplifier in 1880–1900 MHz DECT handset transmitters.

IC Role / Device Role / Timing Role: Class-A linear amplifier delivering +19 dBm P_−1dB with IP3 = 32 dBm at 0.9 GHz.

Use Value: Meets ETSI EN 300 175-3 spectral mask requirements without external predistortion.

GSM/GPRS Mobile Antenna Tuner

ISM Band IoT Gateway Receiver

Use Scenario: Adaptive impedance-matching amplifier in tunable antenna systems for dual-band GSM (900/1800 MHz).

IC Role / Device Role / Timing Role: Broadband gain block supporting 0.2–1.8 GHz operation with <1.5 dB NF variation across band.

Use Value: Maintains consistent SNR across frequency-agile antenna configurations without re-tuning.

Use Scenario: 868 MHz sub-GHz receiver front-end in European smart meter gateways.

IC Role / Device Role / Timing Role: Low-current (I_C = 20 mA) LNA configured for 1.3 dB NF and 13 dB |S₂₁|² at 50 Ω.

Use Value: Extends battery life while meeting EN 300 220-1 sensitivity thresholds for 1% duty-cycle LPWAN protocols.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP640	f_T = 25 GHz, NF_min = 0.85 dB at 1.8 GHz, SOT343 package (3-pin)	Higher-frequency optimization (up to 3.5 GHz); lower noise but reduced DC current capability (I_C max = 60 mA)	Select for 2.4 GHz WiFi LNA where bandwidth exceeds BFP196R's 1.5 GHz limit
MRF581	V_CEO = 25 V, P_1dB = 23 dBm, TO-92 package, no AEC-Q101 qualification	Higher-power Class-A operation (up to 200 mA), but lacks automotive qualification and has higher NF (2.1 dB)	Select for non-automotive 900 MHz repeater PA where voltage headroom >12 V is required

Compared with BFP196R E6501, BFP640 offers superior noise and bandwidth for modern 2.4 GHz systems but sacrifices DC drive capability and automotive compliance; MRF581 provides higher voltage tolerance and output power but trades off noise performance and qualification rigor-making BFP196R optimal for cost-sensitive, AEC-Q101–required 900 MHz telecom front-ends.

Availability

BFP196R E6501 is available at Aetrix Electronics and suitable for cellular base station front-ends, DECT cordless phone power amplifiers, and ISM-band IoT gateway receivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BFP196R E6501 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and manufacturing facilities.

The BFP196R E6501 belongs to Infineon's legacy RF bipolar transistor product line, engineered specifically for high-linearity, low-noise amplification in 0.2–1.8 GHz telecommunications infrastructure and consumer wireless devices.

FAQ

What is the recommended bias condition for minimum noise figure?

For NF_min = 1.3 dB at 900 MHz, operate at I_C = 20 mA and V_CE = 8 V with source impedance Z_S = Z_Sopt ≈ 12 + j15 Ω. This condition is verified per datasheet Figure 9 and requires precise bias network design to avoid degradation from base resistance or thermal drift.

Is the BFP196R E6501 suitable for 5G sub-6 GHz applications?

No-its f_T = 7.5 GHz and verified AC performance only extend to 1.8 GHz. At 3.5 GHz, gain drops below 6 dB and noise figure exceeds 3.5 dB, failing 5G NR FR1 receiver sensitivity requirements. Use BFP640 or BGA2867 instead for sub-6 GHz bands.

How does the dual-emitter configuration improve RF performance?

The SOT143 package uses two separate emitter leads (Pins 2 and 4) to reduce total emitter series inductance by ~40%, improving high-frequency stability and allowing wider bandwidth without neutralization. This also lowers thermal resistance path from junction to PCB via dual low-inductance ground connections.

Does Aetrix Electronics provide tape-and-reel packaging for automated assembly?

Yes-BFP196R E6501 is supplied in EIA-481-compliant 8 mm tape (3,000 units/reel) with embossed carrier and cover tape, compatible with Fuji CP-7, Yamaha YSM20, and Universal Instruments Genesis pick-and-place systems. Reel ID marking includes full part number and date code.

BFP 196R E6501 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-253-4, TO-253AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 12V

Frequency - Transition:: 7.5GHz

Noise Figure (dB Typ @ f):: 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

Gain:: 10.5dB ~ 16.5dB

Power - Max:: 700mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 50mA, 8V

Current - Collector (Ic) (Max):: 150mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT-143-3D

BFP 196R E6501 FAQ

1.How can I place an order for BFP 196R E6501 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFP 196R E6501 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFP 196R E6501 reliable?

The price and inventory of BFP 196R E6501 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP 196R E6501 is usually 5 days.

3.What payment methods are accepted for BFP 196R E6501?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP 196R E6501 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFP 196R E6501?

BFP 196R E6501 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFP 196R E6501 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFP 196R E6501?

For technical support, including BFP 196R E6501 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP 196R E6501 requirements.

6.How does Aetrix verify that BFP 196R E6501 is sourced from the original manufacturer or authorized distributors?

All BFP 196R E6501 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP 196R E6501 meets industry standards.

7.What is the process for return or replacement of BFP 196R E6501?

All BFP 196R E6501 units undergo pre-shipment inspection (PSI). If there is an issue with BFP 196R E6501, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFP 196R E6501 part is unused and in its original packaging.

Return procedure for BFP 196R E6501:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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