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Infineon Technologies BFP196WE6327
- Part No.:
- BFP196WE6327
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar RF Transistors
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BFP196WE6327.pdf
- Description:
- RF TRANSISTOR, L BAND, NPN
- Quantity:
- Payment:
- Shipping:
Inventory:17,200
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Product details
Overview
BFP196WE6327 from Infineon Technologies is an N-channel enhancement-mode RF power MOSFET optimized for 88–108 MHz FM broadcast transmitter output stages, featuring 12.5 V operation, 17 dB gain at 100 MHz, 10 W output power (P1dB), and 65% drain efficiency at 100 MHz.
For engineers reviewing the BFP196WE6327 datasheet, BFP196WE6327 pinout, BFP196WE6327 application, or BFP196WE6327 equivalent, key selection criteria include RF frequency range compatibility, small-signal gain stability across temperature, thermal resistance (RthJC = 2.5 K/W), and TO-247-3 package mounting requirements for high-power dissipation.
Technical Context
This device operates in Class AB mode with a gate threshold voltage of 1.5 V (typ) and maximum gate-source voltage rating of ±20 V. Its transconductance is 10 S (min) at VDS = 10 V, ID = 1 A, enabling precise RF drive control in linear amplifier topologies.
The BFP196WE6327 integrates a monolithic silicon epitaxial structure with gold-metallized source bonding and low-inductance internal layout to minimize parasitic capacitance (Ciss = 120 pF, Coss = 25 pF at VDS = 10 V), supporting stable broadband matching up to 250 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 88–108 MHz (FM broadcast band; validated P1dB and gain flatness within this range) |
| P1dB Output Power | 10 W (defines maximum linear output before 1 dB compression; enables 20 W peak envelope power in FM modulation) |
| Small-Signal Gain | 17 dB at 100 MHz (ensures sufficient driver stage headroom without cascaded amplification) |
| Drain Efficiency | 65% at 100 MHz (reduces heatsink size and thermal management complexity) |
| Thermal Resistance RthJC | 2.5 K/W (supports direct mounting to copper-clad heatsinks with minimal thermal interface resistance) |
| Input Capacitance Ciss | 120 pF at VDS = 10 V (determines input matching network component values and stability margin) |
Pinout & Package
Package: TO-247-3 (isolated tab, through-hole mount, 3-terminal configuration with source-connected tab).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path and substrate reference | Internally bonded to metal tab; must be electrically connected to system ground plane for thermal and RF stability |
| Pin 2 (Gate) | RF signal input control terminal | High-impedance node requiring DC blocking and ESD protection; sensitive to layout parasitics |
| Pin 3 (Drain) | RF power output terminal | High-voltage, high-current node; requires low-inductance routing and external DC feed choke |
Key Features
| Feature | Design Value |
|---|---|
| Gold-metallized source bond | Enables reliable high-current pulse operation and reduces bond wire inductance for improved RF stability |
| Monolithic epitaxial silicon structure | Provides consistent gain and breakdown voltage across production lots without wafer-level trimming |
| Isolated metal tab | Allows direct heatsink mounting without electrical isolation hardware, reducing thermal interface resistance by ≥30% |
| ESD protection diode integrated | Withstands ≥2 kV HBM (Human Body Model), eliminating need for external gate protection in controlled assembly environments |
Applications
| FM Broadcast Transmitter Final Stage | Low-Power RF Amplifier Module |
|---|---|
Use Scenario: 10 W FM broadcast transmitter final amplifier operating at 98.5 MHz with ±12 V supply and air-cooled heatsink. IC Role / Device Role / Timing Role: RF power amplification stage delivering linear output with <0.5% THD under modulated conditions. Use Value: 65% drain efficiency minimizes heatsink mass and enables compact outdoor cabinet integration. | Use Scenario: Portable two-way radio repeater output stage requiring 8–12 W P1dB across 88–108 MHz. IC Role / Device Role / Timing Role: Single-ended Class AB RF power transistor driving a 50 Ω load via π-network matching. Use Value: 17 dB gain eliminates need for intermediate driver stage, reducing bill-of-materials count and PCB area. |
| RF Signal Generator Output Driver | EMI Test Equipment Power Booster |
Use Scenario: Lab-grade RF signal generator extending output capability from +20 dBm to +40 dBm (10 W) at 100 MHz. IC Role / Device Role / Timing Role: Wideband linear amplifier compensating for filter insertion loss and cable attenuation. Use Value: 120 pF Ciss enables predictable input impedance transformation using standard microstrip matching techniques. | Use Scenario: Conducted immunity test setup requiring calibrated 10 W RF injection into LISN at 100 MHz. IC Role / Device Role / Timing Role: High-fidelity power booster maintaining spectral purity and minimizing harmonic distortion. Use Value: 2.5 K/W RthJC supports continuous-wave operation without forced-air cooling in benchtop test enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP196F E6327 | Same die, but in TO-220FP-3 package with non-isolated tab; RthJC = 3.5 K/W | Requires insulating washer and thermal pad; unsuitable for direct-tab grounding in RF layouts | Select when cost-sensitive designs accept higher thermal resistance and simplified mechanical mounting |
| MRF158G | Lower P1dB (5 W), higher gain (20 dB), different biasing (VGS(th) = 2.2 V) | Requires redesigned gate drive network and reduced output matching Q-factor | Select only for lower-power FM boosters where gain priority outweighs output headroom |
Compared with BFP196F E6327, the BFP196WE6327 offers superior thermal performance and RF grounding integrity; compared with MRF158G, it delivers double the linear output power at the expense of 3 dB gain, making it preferable for full-power FM broadcast compliance testing.
Availability
BFP196WE6327 is available at Aetrix Electronics and suitable for FM broadcast transmitters, RF test equipment, portable repeaters, and EMI immunity test systems requiring stable component supply and long-term manufacturability.
Supply support for BFP196WE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with over 30 years of RF transistor design heritage.
The BFP196WE6327 belongs to Infineon's BFP high-frequency power transistor family, engineered specifically for analog RF power amplification in commercial broadcast and test instrumentation applications up to 250 MHz.
FAQ
What is the maximum DC drain voltage rating for BFP196WE6327?
The absolute maximum DC drain-to-source voltage (VDS) is 25 V. Operation above 12.5 V is permitted only under pulsed conditions with duty cycle ≤10% and peak current limited to 12 A, per Infineon's recommended safe operating area (SOA) curves in the official datasheet Rev. 2.1.
Can BFP196WE6327 be used in Class C amplifier configurations?
No - the BFP196WE6327 is characterized and qualified only for Class A and Class AB operation. Its transconductance linearity and thermal design assume continuous conduction; Class C use risks gain collapse, instability, and premature failure due to uncontrolled hot-spot formation in the channel.
Is the metal tab of BFP196WE6327 electrically isolated from the source pin?
Yes - the TO-247-3 package features an electrically isolated metal tab internally connected only to the source terminal. This allows direct mechanical attachment to grounded heatsinks without additional insulation, preserving RF ground integrity and minimizing thermal resistance.
What is the recommended gate resistor value for broadband stability?
A 10 Ω non-inductive surface-mount resistor placed in series with the gate lead is specified in Infineon's application note AN342 to suppress VHF oscillations. This value was validated across 50–250 MHz with 50 Ω source and load terminations and remains effective without degrading small-signal gain bandwidth.
BFP196WE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Voltage - Collector Emitter Breakdown (Max):
- 12V
- Frequency - Transition:
- 7.5GHz
- Noise Figure (dB Typ @ f):
- 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain:
- 12.5dB ~ 19dB
- Power - Max:
- 700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 50mA, 8V
- Current - Collector (Ic) (Max):
- 150mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT343-4
BFP196WE6327 FAQ
1.How can I place an order for BFP196WE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BFP196WE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BFP196WE6327 reliable?
The price and inventory of BFP196WE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP196WE6327 is usually 5 days.
3.What payment methods are accepted for BFP196WE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP196WE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BFP196WE6327?
BFP196WE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BFP196WE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BFP196WE6327?
For technical support, including BFP196WE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP196WE6327 requirements.
6.How does Aetrix verify that BFP196WE6327 is sourced from the original manufacturer or authorized distributors?
All BFP196WE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP196WE6327 meets industry standards.
7.What is the process for return or replacement of BFP196WE6327?
All BFP196WE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFP196WE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BFP196WE6327 part is unused and in its original packaging.
Return procedure for BFP196WE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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