Infineon Technologies BFP196WH6740

Overview

BFP196WH6740 from Infineon Technologies is a low-noise silicon bipolar RF transistor designed for broadband amplifier stages in antenna front-ends and telecom infrastructure up to 1.5 GHz, with f_T = 7.5 GHz, NF_min = 1.3 dB at 900 MHz, I_C = 150 mA max, V_CEO = 12 V, and SOT343 package. It serves as a low-distortion gain block in DECT/PCN base stations and receiver LNA stages.

For engineers reviewing the BFP196WH6740 datasheet, BFP196WH6740 pinout, BFP196WH6740 application, or BFP196WH6740 equivalent, key selection criteria include noise figure at 900 MHz, transducer gain under 50 Ω matching, third-order intercept point (IP3 = 32 dBm), thermal resistance (R_thJS = 115 K/W), and AEC-Q101 qualification status.

Technical Context

This NPN bipolar RF transistor operates in common-emitter configuration with emitter-grounded biasing for optimal noise performance. Its high f_T enables stable gain beyond 1 GHz, while C_cb = 0.86 pF (typ) and C_eb = 3.9 pF (typ) support broadband impedance matching across 0.9–1.8 GHz bands.

Designed for fixed-bias or emitter-degenerated topologies, it delivers G_ma = 19 dB at 900 MHz and P_-1dB = 19 dBm output compression under 50 Ω terminations. The device requires ESD-safe handling per AEC-Q101 Class 2 requirements.

Key Specifications

Pinout & Package

SOT343 (SC-82AB) 4-pin plastic surface-mount package with visible leads; RoHS-compliant and halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise bipolar RF transistor applications.

Compared with BFP181W and MRF581, BFP196WH6740 offers the best balance of noise performance (1.3 dB), gain (19 dB), and thermal capability (115 K/W) in the SOT343 footprint-making it optimal for space-constrained, high-linearity telecom LNAs requiring AEC-Q101 compliance.

Availability

BFP196WH6740 is available at Aetrix Electronics and suitable for cellular base station LNAs, DECT/PCN power amplifiers, and ISM band receiver front-ends requiring stable component supply, AEC-Q101 qualification, and RoHS/halogen-free compliance.

Supply support for BFP196WH6740 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and R&D centers.

The BFP196WH6740 belongs to Infineon's BFP series of silicon bipolar RF transistors, engineered specifically for high-linearity, low-noise amplification in 0.8–2.0 GHz telecommunications infrastructure and portable radio systems.

FAQ

What is the recommended bias condition for minimum noise figure?

For NF_min = 1.3 dB at 900 MHz, operate at I_C = 20 mA and V_CE = 8 V with source impedance Z_S = Z_Sopt ≈ 15 + j12 Ω. This condition is verified per Infineon's application note AN205 and requires external matching network implementation on PCB.

Does BFP196WH6740 support pulsed RF operation?

Yes - the device supports pulsed operation with duty cycle D = 0 and pulse width t_p ≥ 100 ns, where P_totmax/P_totDC reaches 10× at t_p = 10 µs. Thermal derating follows the R_thJS vs. t_p curve in Figure 4 of the datasheet.

Is the SOT343 package lead-free and compatible with standard reflow profiles?

Yes - BFP196WH6740 uses a Pb-free, halogen-free SOT343 package qualified for JEDEC J-STD-020D reflow, with peak temperature ≤ 260°C and time above liquidus ≤ 60 seconds. Lead finish is matte tin (Sn) over NiPdAu.

How does AEC-Q101 qualification impact its use in industrial applications?

AEC-Q101 qualification confirms robustness against temperature cycling (-55°C to +150°C), mechanical shock, and ESD (HBM ≥ 2 kV). While intended for automotive, this validation provides enhanced reliability assurance for industrial telecom equipment operating in extended ambient ranges.