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Infineon Technologies BFP405E6327BTSA1

Part No.:
BFP405E6327BTSA1
Manufacturer:
Infineon Technologies
Category:
Bipolar RF Transistors
Package:
SC-82A, SOT-343
Datasheet:
AetrixBFP405E6327BTSA1.pdf
Description:
RF TRANS NPN 5V 25GHZ SOT343-4
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,078

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Product details

Overview

BFP405E6327BTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for oscillator and amplifier stages up to 12 GHz. It delivers NFmin = 1.25 dB at 1.8 GHz, Gms = 23 dB at 1.8 GHz, fT = 25 GHz (typ), and operates at IC = 5 mA, VCE = 2 V in SOT343 package - used in GPS L1-band front-end LNAs and low-power 2.4 GHz ISM transceivers.

For engineers reviewing the BFP405E6327BTSA1 datasheet, BFP405E6327BTSA1 pinout, BFP405E6327BTSA1 application, or BFP405E6327BTSA1 equivalent, key selection criteria include verified noise figure at 1.8 GHz, S-parameter support up to 6 GHz, SPICE GP model availability, SOT343 thermal resistance (RthJS = 530 K/W), and AEC-Q101 qualification status.

Technical Context

This NPN RF transistor uses epitaxial base technology to achieve high fT and low Ccb (0.05 pF typ) with emitter-grounded configuration. Its noise-optimized design targets ZSopt matching rather than 50 Ω input, requiring external matching networks for minimum noise operation.

DC biasing is constrained by VCEO = 4.5 V max and IC ≤ 25 mA, with thermal derating above TS = 110 °C. The device supports pulsed RF operation with tp ≥ 100 ns and duty cycle D = 0, validated via RthJS = 530 K/W and pulse load curves.

Key Specifications

ParameterValue and Actual Design Meaning
NFmin1.25 dB at 1.8 GHz - sets lower bound for system noise floor in GPS/ISM receivers
Gms23 dB at 1.8 GHz - maximum stable power gain achievable with matched terminations
fT25 GHz (typ) at IC = 10 mA, VCE = 3 V - enables fundamental oscillation up to 12 GHz
Ccb0.05 pF (typ) at VCB = 2 V - minimizes Miller effect in common-emitter amplifiers
RthJS530 K/W - defines thermal bottleneck between junction and PCB solder point
IP315 dBm at 1.8 GHz - quantifies linearity for two-tone intermodulation in narrowband receivers
P-1dB5 dBm at 1.8 GHz - output power where gain compresses by 1 dB under 50 Ω match

Pinout & Package

SOT343 (SC-82AB) surface-mount plastic package with visible leads, RoHS-compliant and halogen-free. Four-terminal configuration with dual emitter pins for improved grounding and thermal path.

Pin/TerminalCircuit RoleDesign Meaning
1 (B)BaseRF input node requiring impedance-matched network for noise optimization
2 (E)Emitter 1Primary DC return and RF ground reference; connected to PCB thermal pad
3 (C)CollectorRF output node; requires DC blocking and matching to 50 Ω or ZLopt
4 (E)Emitter 2Secondary emitter connection for enhanced grounding and reduced parasitic inductance

Key Features

FeatureDesign Value
Low-noise oscillator capabilityValidated oscillation up to 12 GHz with phase noise < −110 dBc/Hz @ 100 kHz offset
SPICE GP model with package parasiticsIncludes extracted S-parameters, noise parameters, and flicker noise up to 6 GHz
AEC-Q101 qualifiedQualified for automotive-grade reliability per stress test conditions including HTGB, HTRB, and TCT
Thermal-aware packagingSOT343 leadframe design enables direct thermal conduction from emitter leads to PCB copper

Applications

GPS L1 Band LNA2.4 GHz ISM Transceiver Front-End

Use Scenario: Low-noise amplification of 1.575 GHz GPS signals in portable navigation devices with tight power budgets.

IC Role / Device Role / Timing Role: First-stage LNA operating at IC = 2 mA, VCE = 2 V with ZS = ZSopt for minimum system noise figure.

Use Value: Achieves 1.25 dB NFmin while consuming only 4 mW DC power, extending battery life without degrading C/N₀ ratio.

Use Scenario: Receive-path amplifier in Bluetooth LE and Zigbee modules requiring high linearity at low supply current.

IC Role / Device Role / Timing Role: Single-ended RF amplifier biased at IC = 5 mA, VCE = 2 V with 50 Ω input/output matching.

Use Value: Delivers 18.5 dB |S21|² gain and 15 dBm IP3 within 75 mW total dissipation, enabling robust coexistence in dense 2.4 GHz environments.

UWB Pulse GeneratorAutomotive Radar Local Oscillator

Use Scenario: Ultra-wideband pulse generation for short-range radar and proximity sensing in consumer electronics.

IC Role / Device Role / Timing Role: Class-C oscillator core generating sub-nanosecond pulses at fundamental frequencies up to 6 GHz.

Use Value: Leverages 25 GHz fT and low Ccb to sustain sharp pulse edges with minimal timing jitter (< 1 ps RMS).

Use Scenario: Local oscillator buffer stage in 77 GHz automotive radar transceivers using harmonic multiplication.

IC Role / Device Role / Timing Role: Fundamental 10–12 GHz oscillator driving active multiplier chain; operated at IC = 10 mA, VCE = 3 V.

Use Value: AEC-Q101 qualification ensures stable phase noise performance across −40 °C to +125 °C ambient, critical for Doppler accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BFP640FESDfT = 45 GHz (typ), Ccb = 0.035 pF, NFmin = 0.95 dB @ 1.8 GHz, but VCEO = 3.5 VHigher gain and lower noise, but lower breakdown voltage limits headroom in high-dynamic-range receiversSelect when NF < 1.0 dB is required and supply rail ≤ 3.3 V
MRF581fT = 12 GHz (typ), NFmin = 1.4 dB @ 1.8 GHz, P-1dB = 10 dBm, SOT-343 compatibleLower frequency limit and higher compression point suit wideband IF amplifiers over 500 MHz–3 GHzSelect when linearity > 10 dBm P-1dB is prioritized over ultra-low noise

Compared with BFP405E6327BTSA1, BFP640FESD trades voltage headroom for superior noise and gain, while MRF581 sacrifices noise performance for higher output power - making each optimal for distinct RF stage roles in receiver chains.

Availability

BFP405E6327BTSA1 is available at Aetrix Electronics and suitable for GPS receivers, 2.4 GHz ISM transceivers, UWB pulse generators, and automotive radar local oscillators requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BFP405E6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and R&D centers.

The BFP405 belongs to Infineon's high-frequency bipolar transistor product line, designed specifically for low-noise, high-frequency oscillator and amplifier applications in wireless infrastructure, automotive radar, and precision navigation systems.

FAQ

What is the recommended bias point for minimum noise figure?

For NFmin = 1.25 dB at 1.8 GHz, operate at IC = 2 mA and VCE = 2 V with source impedance ZS = ZSopt (15 + j10 Ω at 1.8 GHz). This requires an external matching network - not 50 Ω - and is validated in the device's noise parameter files on Infineon's RF models website.

Is the BFP405E6327BTSA1 suitable for 5G sub-6 GHz front-ends?

No - while its fT reaches 25 GHz, the device's Gms drops below 10 dB above 3.5 GHz, and IP3 degrades significantly beyond 2.5 GHz. It is optimized for 0.9–2.4 GHz bands (GPS, ISM, LTE B1/B3), not n77/n78 5G FR1 bands requiring > 3.5 GHz linear gain.

Does the SOT343 package include an exposed thermal pad?

No - the SOT343 package has no exposed thermal pad. Thermal conduction relies solely on the four leads, with RthJS = 530 K/W measured at the emitter lead solder point. PCB layout must maximize copper area under pins 2 and 4 (both emitters) to improve heat dissipation.

Where can I obtain the noise parameter files for simulation?

Noise parameters (Fmin, Γopt, Rn) and full S-parameter datasets up to 6 GHz are available in Touchstone (.s2p) and ADS/MWO formats at www.infineon.com/rf.models. The SPICE GP model includes all noise data and is validated against measured on-wafer S-parameters.

BFP405E6327BTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-82A, SOT-343
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
5V
Frequency - Transition:
25GHz
Noise Figure (dB Typ @ f):
1.25dB @ 1.8GHz
Gain:
23dB
Power - Max:
75mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 5mA, 4V
Current - Collector (Ic) (Max):
25mA
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT343-3D

BFP405E6327BTSA1 FAQ

1.How can I place an order for BFP405E6327BTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFP405E6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFP405E6327BTSA1 reliable?

The price and inventory of BFP405E6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP405E6327BTSA1 is usually 5 days.

3.What payment methods are accepted for BFP405E6327BTSA1?

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFP405E6327BTSA1?

For technical support, including BFP405E6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP405E6327BTSA1 requirements.

6.How does Aetrix verify that BFP405E6327BTSA1 is sourced from the original manufacturer or authorized distributors?

All BFP405E6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP405E6327BTSA1 meets industry standards.

7.What is the process for return or replacement of BFP405E6327BTSA1?

All BFP405E6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFP405E6327BTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFP405E6327BTSA1 part is unused and in its original packaging.

Return procedure for BFP405E6327BTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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