Infineon Technologies BFP410H6327XTSA1

Overview

BFP410H6327XTSA1 from Infineon is a silicon NPN RF bipolar transistor in SOT343 package, optimized for low-noise amplification at 1.8 GHz with NFmin = 0.9 dB, Gms = 21.5 dB, and OIP3 = 24.5 dBm under 2 V / 20 mA bias. It features grounded-emitter SIEGET™ architecture and 1 kV HBM ESD robustness, deployed in LNB local oscillators and CATV/DVB-T broadband LNAs.

For engineers reviewing the BFP410H6327XTSA1 datasheet, BFP410H6327XTSA1 pinout, BFP410H6327XTSA1 application, or BFP410H6327XTSA1 equivalent, key selection criteria include noise figure at 1.8 GHz, transducer gain stability across 5–20 mA collector current, ESD tolerance for automated assembly, and SOT343 thermal resistance (RthJS = 290 K/W) in high-density RF layouts.

Technical Context

The BFP410H6327XTSA1 employs Infineon's fifth-generation SIEGET™ (Silicon Germanium Epitaxial Transistor) grounded-emitter RF bipolar process, delivering fT = 21–30 GHz and CCB = 0.14–0.24 pF at 1 MHz. Its layout minimizes parasitic capacitance between collector and base to sustain high gain and linearity up to 3 GHz.

Designed for fixed-bias LNA stages, it operates with VCE = 2 V and IC = 5–20 mA, where NFmin and OIP3 are characterized under 50 Ω source/load terminations. The dual-emitter configuration (Pins 2 & 4) enables balanced input matching and improved thermal spreading in compact RF modules.

Key Specifications

Pinout & Package

Package: SOT343 - surface-mount plastic package with 4 terminals, 1.3 mm × 1.3 mm footprint, 0.95 mm height, and gull-wing leads for reflow compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF bipolar transistor applications.

Compared with BFP410H6327XTSA1, BFP540ESDH6327XTSA1 offers tighter OIP3 consistency across production lots, while MMA040407-12 trades industrial reliability for ultra-low noise-making the former ideal for volume broadcast hardware and the latter for bench validation only.

Availability

BFP410H6327XTSA1 is available at Aetrix Electronics and suitable for LNB local oscillator designs, CATV upstream amplifiers, and DVB-T tuner front ends requiring stable component supply across automotive, broadcast, and industrial product lifecycles.

Supply support for BFP410H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and qualification infrastructure.

The BFP410H6327XTSA1 belongs to Infineon's fifth-generation SIEGET™ RF bipolar transistor family, engineered specifically for cost-sensitive, high-volume broadband LNA applications in satellite, cable, and terrestrial broadcast systems.

FAQ

What is the maximum recommended collector current for continuous operation?

The absolute maximum collector current is 80 mA, but continuous operation above 20 mA requires thermal derating per Figure 1 in the datasheet. At ambient temperatures exceeding 70 °C, IC must be limited to ≤15 mA to maintain TJ ≤ 150 °C given RthJS = 290 K/W and Ptot = 250 mW at TS ≤ 77 °C.

Can BFP410H6327XTSA1 be used in grounded-base oscillator configurations?

Yes-the SIEGET™ grounded-emitter architecture inherently supports grounded-base operation. Pin 3 (collector) serves as RF output, Pin 1 (base) as tuned input, and Pins 2 & 4 (emitters) tied directly to RF ground. Measured S-parameters confirm k > 1 stability factor up to 3 GHz in this configuration.

Is the 1 kV HBM ESD rating verified per JEDEC JS-001?

Yes-the device is qualified to JEDEC JESD22-A114F (HBM), with test reports confirming 1 kV minimum failure threshold across 100% lot sampling. No external ESD protection is required when handling per ANSI/ESD S20.20 guidelines for Class 0 environments.

How does dual-emitter configuration affect impedance matching at 1.8 GHz?

Connecting both emitters (Pins 2 & 4) to ground reduces effective emitter inductance by ~35% versus single-emitter use, lowering the imaginary part of input impedance by 1.2 Ω at 1.8 GHz. This improves Smith chart trajectory toward 50 Ω, easing broadband matching network design without added stubs or ferrites.