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Infineon Technologies BFP420E6327

Part No.:
BFP420E6327
Manufacturer:
Infineon Technologies
Category:
Bipolar RF Transistors
Package:
SC-82A, SOT-343
Datasheet:
AetrixBFP420E6327.pdf
Description:
RF TRANSISTOR, X BAND, NPN
Quantity:
Payment:
Payment
Shipping:
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Inventory:139,427

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Product details

Overview

BFP420E6327 from Infineon Technologies is an NPN silicon RF transistor optimized for high-gain, low-noise amplifier stages and oscillator circuits up to 10 GHz. It delivers a noise figure of 1.1 dB at 1.8 GHz, maximum stable power gain of 21 dB at 1.8 GHz, and a transition frequency (fT) of 25 GHz, housed in a Pb-free SOT343 package with gold metallization for reliability in wireless infrastructure and automotive radar front-ends.

For engineers reviewing the BFP420E6327 datasheet, BFP420E6327 pinout, BFP420E6327 application, or BFP420E6327 equivalent, key selection criteria include its 1.1 dB noise figure at 1.8 GHz, 21 dB Gms, fT = 25 GHz, SOT343 thermal resistance (RthJS ≤ 260 K/W), and AEC-Q101 qualification for automotive-grade RF signal chains.

Technical Context

This device operates as a high-frequency NPN bipolar junction transistor with gold-metallized emitter-base-collector interconnects, enabling stable RF performance beyond 5 GHz. Its fT = 25 GHz and Ccb = 0.15 pF (typ.) support wideband amplification while maintaining low interelectrode capacitance and high transconductance.

The BFP420E6327 is characterized under pulsed DC conditions (IC = 20 mA, VCE = 2 V) for RF metrics including |S21|² = 17 dB and IP3 = 22 dBm at 1.8 GHz, with ZSopt and ZLopt terminations defined for minimum noise and maximum gain configurations.

Key Specifications

ParameterValue and Actual Design Meaning
Noise figure (F)1.1 dB at 1.8 GHz - enables sensitive receiver front-end design in LTE/5G base stations
Transition frequency (fT)25 GHz - supports stable amplification up to Ka-band frequencies
Max stable power gain (Gms)21 dB at 1.8 GHz - provides high small-signal gain without oscillation risk
Collector-emitter voltage (VCEO)4.5 V - defines safe DC bias headroom for 3.3 V RF supply rails
Thermal resistance (RthJS)≤260 K/W - limits junction temperature rise under 160 mW dissipation in SOT343
ESD ratingAEC-Q101 qualified - ensures robustness against human-body-model discharges in automotive assembly
PackageSOT343 - 4-pin surface-mount footprint with exposed collector pad for thermal management

Pinout & Package

SOT343 is a leadless, thermally enhanced plastic package with four terminals and an exposed collector pad on the bottom side for improved heat transfer. Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector, Pin 4 = Emitter (dual-emitter configuration).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1BaseRF input control node; requires impedance-matched 50 Ω source for optimal noise performance
Pin 2EmitterAC ground reference; dual-emitter layout improves thermal symmetry and current sharing
Pin 3CollectorRF output node and primary thermal path; soldered to PCB copper pour for RthJS ≤ 260 K/W
Pin 4EmitterSecond emitter terminal - internally tied to Pin 2; used for symmetric layout or grounding flexibility

Key Features

FeatureDesign Value
Gold metallizationEnables long-term bond-wire reliability and corrosion resistance in humid or high-temperature environments
AEC-Q101 qualificationValidated for automotive radar and infotainment RF modules requiring extended temperature cycling and ESD immunity
ZSopt impedance profileDefined source impedance (e.g., 50 + j25 Ω at 1.8 GHz) enables repeatable low-noise matching network design
Nonlinear SPICE model availabilityAccurate behavioral simulation up to 10 GHz supports pre-layout gain compression and IP3 prediction

Applications

5G Massive MIMO Active AntennaAutomotive 77 GHz Radar LNA

Use Scenario: Low-noise amplification of 3.5 GHz and 28 GHz signals in beamforming antenna arrays.

IC Role / Device Role / Timing Role: First-stage LNA in distributed RF front-end; configured for ZSopt matching to minimize system noise figure.

Use Value: 1.1 dB F at 1.8 GHz and 25 GHz fT allow scalable design across sub-6 GHz and mmWave bands using same process node.

Use Scenario: Receiver chain amplification in 77 GHz ADAS radar modules operating at −40 °C to +125 °C ambient.

IC Role / Device Role / Timing Role: High-reliability LNA stage before mixer; leverages AEC-Q101 qualification and gold metallization.

Use Value: RthJS ≤ 260 K/W and Tj = 150 °C rating ensure thermal stability during sustained radar pulse operation.

Wi-Fi 6E Front-End ModuleUWB Impulse Radio Transceiver

Use Scenario: Power amplification and harmonic suppression in 5.925–7.125 GHz unlicensed band transmitters.

IC Role / Device Role / Timing Role: Driver amplifier with 21 dB Gms and 22 dBm IP3; biased at IC = 20 mA, VCE = 2 V.

Use Value: Low Ccb (0.15 pF typ.) and high fT reduce second-harmonic distortion critical for OFDMA channel fidelity.

Use Scenario: Ultra-wideband pulse amplification in 3.1–10.6 GHz medical imaging and secure ranging systems.

IC Role / Device Role / Timing Role: Wideband gain block with flat |S21|² response from 1–6 GHz; uses dual-emitter symmetry for balanced pulse fidelity.

Use Value: 17 dB |S21|² at 1.8 GHz and verified S-parameter data up to 10 GHz enable time-domain pulse integrity modeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NE85633fT = 20 GHz, F = 1.3 dB at 1.8 GHz, SOT343 packageLower gain and higher noise limit use in cost-sensitive consumer Wi-Fi LNA stagesSelect when 0.2 dB noise penalty is acceptable and fT margin > 5 GHz is not required
BFP640fT = 45 GHz, F = 0.9 dB at 1.8 GHz, SOT343 package, higher P-1dB (14 dBm)Higher linearity and bandwidth suit 28 GHz 5G FR2 and satellite commsChoose for mmWave designs needing >30 GHz usable bandwidth and <1 dB noise figure

Compared with NE85633 and BFP640, the BFP420E6327 offers balanced trade-offs between noise, gain, and thermal robustness-ideal for 1.8–6 GHz infrastructure amplifiers where AEC-Q101 compliance and 25 GHz fT provide sufficient margin without over-spec'ing.

Availability

BFP420E6327 is available at Aetrix Electronics and suitable for 5G base station radios, automotive radar modules, and Wi-Fi 6E front-end designs requiring stable component supply across multi-year production cycles.

Supply support for BFP420E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and RF solutions for automotive, industrial, and communications markets.

The BFP420E6327 belongs to Infineon's SIEGET® 25 GHz fT line-designed specifically for high-linearity, low-noise RF amplification in cellular infrastructure and automotive radar front-ends.

FAQ

What is the recommended bias condition for minimum noise figure?

At TA = 25°C, the BFP420E6327 achieves its specified 1.1 dB noise figure at IC = 5 mA and VCE = 2 V with source impedance ZS = ZSopt (e.g., 50 + j25 Ω at 1.8 GHz). This condition is validated per Infineon's characterization methodology and requires precise impedance matching networks-not standard 50 Ω termination.

Is the SOT343 package lead-free and RoHS compliant?

Yes, the BFP420E6327 is manufactured in a Pb-free (RoHS-compliant) SOT343 package per Infineon's documentation. The "E6327" suffix denotes tape-and-reel packaging with RoHS-compliant finish; no lead-containing variants are standard for this orderable part number.

Can the dual-emitter configuration be used independently?

No-Pins 2 and 4 are internally shorted as a single emitter node. The dual-terminal layout serves mechanical symmetry and thermal balance, not functional separation. Using them as independent emitters would violate internal construction and invalidate all published RF parameters.

Does Infineon provide S-parameter files for this transistor?

Yes, Infineon publishes verified S-parameter datasets (including noise parameters) for the BFP420E6327 up to 10 GHz on www.infineon.com/rf.models. These files are generated from typical devices and intended for linear and nonlinear simulation-no additional license or registration is required for download.

BFP420E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-82A, SOT-343
Packaging:
Bulk
Product Status:
Active
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
5V
Frequency - Transition:
25GHz
Noise Figure (dB Typ @ f):
1.1dB @ 1.8GHz
Gain:
21dB
Power - Max:
160mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 20mA, 4V
Current - Collector (Ic) (Max):
35mA
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT343-4

BFP420E6327 FAQ

1.How can I place an order for BFP420E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFP420E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFP420E6327 reliable?

The price and inventory of BFP420E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP420E6327 is usually 5 days.

3.What payment methods are accepted for BFP420E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP420E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFP420E6327?

BFP420E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFP420E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFP420E6327?

For technical support, including BFP420E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP420E6327 requirements.

6.How does Aetrix verify that BFP420E6327 is sourced from the original manufacturer or authorized distributors?

All BFP420E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP420E6327 meets industry standards.

7.What is the process for return or replacement of BFP420E6327?

All BFP420E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFP420E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFP420E6327 part is unused and in its original packaging.

Return procedure for BFP420E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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