Infineon Technologies BFP420E6327BTSA1
- Part No.:
- BFP420E6327BTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar RF Transistors
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BFP420E6327BTSA1.pdf
- Description:
- RF TRANS NPN 5V 25GHZ SOT343-4
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BFP420E6327BTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for high-gain, low-noise amplifier stages in 1.8 GHz cellular infrastructure and GPS front-ends, delivering NFmin = 1.1 dB, Gms = 21 dB, fT = 25 GHz, VCEO = 4.5 V, and IC = 60 mA in SOT343 package.
For engineers reviewing the BFP420E6327BTSA1 datasheet, BFP420E6327BTSA1 pinout, BFP420E6327BTSA1 application, or BFP420E6327BTSA1 equivalent, key selection criteria include noise figure at 1.8 GHz, maximum stable gain under 50 Ω terminations, transition frequency, thermal resistance (RthJS = 250 K/W), and AEC-Q101 qualification status for automotive-grade reliability.
Technical Context
This NPN RF transistor operates with emitter-grounded configuration and supports broadband amplification up to 10 GHz. Its fT of 25 GHz and Ccb = 0.15 pF (typ.) enable stable high-frequency operation, while ZSopt impedance varies with frequency (e.g., 50 + j25 Ω at 1.8 GHz) to minimize noise figure.
The device uses a monolithic silicon bipolar process with visible-leads SOT343 packaging, supporting pulse and DC biasing modes. Thermal design requires attention to RthJS = 250 K/W and junction temperature limits (TJ ≤ 150 °C), with power derating above TS = 98 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| NFmin | 1.1 dB at 1.8 GHz - sets minimum achievable system noise floor in LNA designs |
| Gms | 21 dB at 1.8 GHz - defines maximum stable small-signal gain under matched source/load |
| fT | 25 GHz - determines upper usable frequency limit for gain and oscillator design |
| VCEO | 4.5 V - maximum collector-emitter voltage before breakdown under DC conditions |
| Ccb | 0.15 pF (typ.) - base-collector capacitance affecting high-frequency stability and matching |
| RthJS | 250 K/W - thermal resistance from junction to solder point, critical for PCB copper pour design |
| IP3 | 22 dBm at 1.8 GHz - quantifies linearity and intermodulation distortion performance in receiver front-ends |
Pinout & Package
SOT343 package: 4-pin surface-mount plastic package with visible leads, footprint compatible with JEDEC MO-203AA standard; thermal pad not present; lead finish is Pb-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B) | Base | DC bias and RF input node; requires impedance matching network for optimal noise performance |
| 2 (E) | Emitter | AC ground reference and primary thermal path; soldered directly to PCB for heat dissipation |
| 3 (C) | Collector | RF output and DC power supply node; connects to matching network and supply decoupling |
| 4 (E) | Emitter (redundant) | Second emitter terminal for improved thermal conduction and current sharing in high-reliability layouts |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control and radar modules requiring extended temperature and reliability compliance |
| ZSopt impedance data provided | Enables precise low-noise matching networks (e.g., 50 + j25 Ω at 1.8 GHz) without iterative EM simulation |
| SPICE GP model available | Includes full package parasitics and verified up to 10 GHz for accurate DC/RF co-simulation in ADS/MWO |
| ESD-sensitive handling | Class H2 (≥2 kV HBM); requires grounded workstations and anti-static packaging during assembly |
| Pb-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C for environmentally constrained production |
Applications
| GPS LNA Module | Cellular Base Station Driver |
|---|---|
Use Scenario: Low-noise amplification of 1.575 GHz GPS signals in compact handheld navigation units. IC Role / Device Role / Timing Role: First-stage LNA with ZSopt-matched input network to preserve SNR before downconversion. Use Value: 1.1 dB NFmin enables detection of weak satellite signals under multipath and urban canyon conditions. | Use Scenario: Intermediate gain stage in 1.8 GHz LTE macrocell transceiver front-end. IC Role / Device Role / Timing Role: High-linearity driver amplifier operating at 20 mA bias with 50 Ω I/O matching. Use Value: 22 dBm IP3 ensures minimal adjacent-channel interference in multi-carrier FDD systems. |
| Automotive Radar Oscillator | ISM Band 2.4 GHz Transmitter |
Use Scenario: Fundamental-mode oscillator core in 24 GHz automotive short-range radar (SRR) modules. IC Role / Device Role / Timing Role: Active device in Colpitts topology generating stable local oscillator signal. Use Value: fT = 25 GHz supports reliable oscillation at fundamental frequency without harmonic reliance. | Use Scenario: Power amplifier driver in Bluetooth/Wi-Fi 2.4 GHz ISM-band IoT transmitters. IC Role / Device Role / Timing Role: Gain block between baseband IC and final PA, biased at 20 mA for efficiency/noise trade-off. Use Value: 14–17 dB |S21|² provides sufficient headroom before P-1dB = 12 dBm compression point. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-noise RF transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP640FESD | fT = 45 GHz, NFmin = 0.9 dB at 2.4 GHz, Ccb = 0.09 pF - higher frequency capability but tighter layout tolerance | Preferred for 5 GHz Wi-Fi 6E front-ends where bandwidth exceeds 1.8 GHz requirements | Select when >20 GHz fT and sub-1 dB NF are required; verify layout parasitics due to smaller die size |
| MMA040407-12 | fT = 18 GHz, NFmin = 1.3 dB at 1.8 GHz, RthJS = 300 K/W - lower gain and higher thermal resistance | Suitable for cost-sensitive consumer GPS modules where AEC-Q101 is not mandated | Choose for non-automotive applications with relaxed reliability and thermal constraints |
Compared with BFP420E6327BTSA1, BFP640FESD offers superior high-frequency linearity but demands stricter layout control, while MMA040407-12 trades gain and thermal performance for lower unit cost in non-automotive designs.
Availability
BFP420E6327BTSA1 is available at Aetrix Electronics and suitable for GPS receivers, cellular infrastructure amplifiers, automotive radar oscillators, and ISM-band transmitters requiring stable component supply across industrial and automotive production cycles.
Supply support for BFP420E6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and RF solutions for automotive, industrial, and communications markets.
The BFP420 belongs to Infineon's BFP family of silicon bipolar RF transistors designed specifically for high-gain, low-noise amplifier and oscillator applications up to 10 GHz in cost-sensitive, high-volume wireless systems.
FAQ
What is the recommended bias condition for minimum noise figure?
For minimum noise figure (NFmin = 1.1 dB), bias the BFP420E6327BTSA1 at IC = 5 mA and VCE = 2 V. The optimum source impedance ZSopt is frequency-dependent: at 1.8 GHz, it is 50 + j25 Ω. Matching networks must be synthesized using this complex impedance, not 50 Ω alone, to achieve specified NFmin.
Is the SOT343 package thermally enhanced?
No, the SOT343 package for BFP420E6327BTSA1 lacks an exposed thermal pad. Thermal management relies solely on the four visible leads, with RthJS = 250 K/W measured at the emitter lead solder point. PCB layout must use ≥2 oz copper and multiple thermal vias under pins 2 and 4 (both emitters) to maintain TJ ≤ 150 °C at Ptot = 210 mW.
Does the device support DC-coupled operation?
Yes, BFP420E6327BTSA1 supports DC-coupled operation with proper biasing: VBE must remain below 1.5 V (VEBO rating), and VCE must stay within 4.5 V (VCEO). For stable DC operation, use emitter degeneration resistors and ensure base current does not exceed 9 mA (IB max) to avoid thermal runaway at elevated temperatures.
Where can I obtain the validated SPICE model?
The validated SPICE Gummel-Poon model for BFP420E6327BTSA1 is hosted on Infineon's official RF models portal (www.infineon.com/rf.models). It includes package parasitics and is verified up to 10 GHz in ADS and MWO formats. Download requires free registration; model revision date and extraction conditions are documented in the accompanying README file.
BFP420E6327BTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Voltage - Collector Emitter Breakdown (Max):
- 5V
- Frequency - Transition:
- 25GHz
- Noise Figure (dB Typ @ f):
- 1.1dB @ 1.8GHz
- Gain:
- 21dB
- Power - Max:
- 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 20mA, 4V
- Current - Collector (Ic) (Max):
- 35mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT343-3D
BFP420E6327BTSA1 FAQ
1.How can I place an order for BFP420E6327BTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BFP420E6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BFP420E6327BTSA1 reliable?
The price and inventory of BFP420E6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP420E6327BTSA1 is usually 5 days.
3.What payment methods are accepted for BFP420E6327BTSA1?
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4.How is shipping managed for BFP420E6327BTSA1?
BFP420E6327BTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BFP420E6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BFP420E6327BTSA1?
For technical support, including BFP420E6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP420E6327BTSA1 requirements.
6.How does Aetrix verify that BFP420E6327BTSA1 is sourced from the original manufacturer or authorized distributors?
All BFP420E6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP420E6327BTSA1 meets industry standards.
7.What is the process for return or replacement of BFP420E6327BTSA1?
All BFP420E6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFP420E6327BTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BFP420E6327BTSA1 part is unused and in its original packaging.
Return procedure for BFP420E6327BTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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