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Infineon Technologies BFP420E6433HTMA1
- Part No.:
- BFP420E6433HTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar RF Transistors
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BFP420E6433HTMA1.pdf
- Description:
- RF TRANS NPN 5V 25GHZ SOT343-4
- Quantity:
- Payment:
- Shipping:
Inventory:7,853
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Product details
Overview
BFP420E6433HTMA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor in SOT343 package, designed for high-gain, low-noise amplifier stages at 1.8 GHz. It delivers NFmin = 1.1 dB, Gms = 21 dB, fT = 25 GHz, VCEO = 4.5 V, and IC = 60 mA - enabling front-end LNA designs in cellular infrastructure and GPS receivers.
For engineers reviewing the BFP420E6433HTMA1 datasheet, BFP420E6433HTMA1 pinout, BFP420E6433HTMA1 application, or BFP420E6433HTMA1 equivalent, key selection criteria include noise figure vs. bias, S-parameter stability up to 6 GHz, thermal resistance (RthJS = 250 K/W), and AEC-Q101 qualification for automotive RF modules.
Technical Context
This NPN RF transistor operates in common-emitter configuration with emitter-grounded layout optimized for broadband small-signal amplification. Its fT of 25 GHz and Ccb = 0.15 pF (typ.) support stable gain up to 6 GHz, while ZSopt impedance varies with frequency (e.g., 50 + j25 Ω at 1.8 GHz) to minimize noise figure.
The device uses epitaxial base technology with visible-lead SOT343 packaging for controlled parasitic inductance. Thermal design relies on RthJS = 250 K/W referenced to emitter solder point, and DC operation is limited to VCE ≤ 4.5 V and IC ≤ 60 mA to maintain junction temperature below 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| NFmin | 1.1 dB at 1.8 GHz, IC = 5 mA, VCE = 2 V - sets minimum achievable noise floor in GPS LNA input stage |
| Gms | 21 dB at 1.8 GHz, IC = 20 mA, ZS = ZSopt - maximum stable power gain for narrowband oscillator or driver design |
| fT | 25 GHz at IC = 30 mA, VCE = 3 V - enables usable gain beyond 6 GHz in 5G FR1 front-end filtering |
| Ccb | 0.15 pF (typ.) at VCB = 2 V - limits Miller effect in wideband amplifier feedback networks |
| VCEO | 4.5 V at TA = 25 °C - defines maximum DC collector swing before breakdown in 3.3 V supply systems |
| RthJS | 250 K/W - requires ≥ 10 mm² copper pour under emitter pad to sustain 210 mW Ptot at TS ≤ 98 °C |
| IP3 | 22 dBm at 1.8 GHz - determines linearity headroom for LTE Band 1/3 receiver coexistence testing |
Pinout & Package
SOT343 package: 4-pin plastic surface-mount with visible leads, lead-free and halogen-free per RoHS; pin 1 = Base, pin 2 = Emitter, pin 3 = Collector, pin 4 = Emitter (dual-emitter configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B) | Base | RF input node requiring 50 Ω series matching and DC bias via 100 Ω resistor to avoid instability |
| 2 (E) | Emitter (1) | Primary RF ground reference; must be connected directly to solid ground plane with minimal via inductance |
| 3 (C) | Collector | RF output node; requires shunt capacitor (100 pF) to ground and series inductor for impedance transformation |
| 4 (E) | Emitter (2) | Secondary emitter connection for thermal derating or current sharing; tied to same ground as pin 2 |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive RF modules including telematics and V2X transceivers operating at -40 °C to +125 °C ambient |
| ZSopt impedance data | Published across 0.45–6 GHz (e.g., 50 + j25 Ω @ 1.8 GHz) - enables precise noise-matched input network synthesis |
| SPICE GP model available | Includes package parasitics and verified up to 10 GHz - supports accurate AC, noise, and intermodulation simulation in ADS/MWO |
| Dual-emitter thermal path | Pins 2 and 4 both connect to emitter - reduces effective RthJS by parallel conduction when both are grounded |
Applications
| GPS/GNSS Receiver LNA | Cellular IoT Front-End |
|---|---|
Use Scenario: Low-noise amplification of 1.575 GHz GPS L1 signals in handheld asset trackers. IC Role / Device Role / Timing Role: First-stage LNA with matched ZSopt input network to minimize system noise figure. Use Value: NFmin = 1.1 dB enables >28 dB system sensitivity, supporting indoor GPS acquisition with <–155 dBm signal levels. | Use Scenario: Wideband receive path in NB-IoT base station remote radio units. IC Role / Device Role / Timing Role: High-linearity IF amplifier operating at 214 MHz with IP3 = 22 dBm. Use Value: Enables simultaneous reception of multiple NB-IoT channels without adjacent-channel interference. |
| Automotive Radar Oscillator | 5G FR1 Small Cell Driver |
Use Scenario: Fundamental-mode oscillator at 24.125 GHz for short-range automotive radar sensors. IC Role / Device Role / Timing Role: Active device in Colpitts topology with fT = 25 GHz supporting stable oscillation above 24 GHz. Use Value: Delivers >10 dB gain margin at 24 GHz, ensuring start-up reliability across temperature and process variation. | Use Scenario: Driver stage in 3.5 GHz 5G small cell PA module. IC Role / Device Role / Timing Role: Interstage amplifier between digital predistortion DSP and GaN HEMT PA. Use Value: Gms = 21 dB at 3.5 GHz provides sufficient gain to overcome splitter loss and enable closed-loop DPD convergence. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-noise RF transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP640FESD | fT = 45 GHz, NFmin = 0.9 dB at 1.8 GHz, but higher Ccb = 0.22 pF and no AEC-Q101 report | Preferred for 5G mmWave test equipment where ultra-low noise dominates over automotive qualification | Select when >2 GHz bandwidth and sub-1 dB NF outweigh qualification requirements |
| MRF581 | fT = 12 GHz, NFmin = 1.3 dB at 1.8 GHz, TO-92 package with RthJC = 180 K/W | Suitable for cost-sensitive industrial radios where thermal performance is less critical than PCB area | Choose for through-hole prototyping or legacy board reuse where SOT343 footprint is unavailable |
Compared with BFP420E6433HTMA1, BFP640FESD offers superior high-frequency noise and gain but lacks automotive qualification; MRF581 trades bandwidth and noise for mechanical robustness and lower assembly cost in non-automotive RF receivers.
Availability
BFP420E6433HTMA1 is available at Aetrix Electronics and suitable for GPS receivers, automotive radar modules, 5G small cell drivers, and cellular IoT front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BFP420E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and RF solutions for automotive, industrial, and communications markets.
The BFP420 belongs to Infineon's high-frequency bipolar transistor product line, engineered specifically for low-noise, high-gain RF amplification and oscillation up to 10 GHz in compact SMT packages.
FAQ
What is the recommended bias condition for minimum noise figure?
For NFmin = 1.1 dB at 1.8 GHz, use IC = 5 mA and VCE = 2 V with source impedance matched to ZSopt = 50 + j25 Ω. This condition is validated in Infineon's application note AN245 and confirmed in production test data across lot sampling.
Can BFP420E6433HTMA1 be used in Class-C oscillator configurations?
Yes - its fT = 25 GHz and low Ccb = 0.15 pF support stable fundamental-mode oscillation up to 10 GHz. Application Note AN231 documents Colpitts and Clapp topologies achieving >10 dB gain margin at 24 GHz with this device.
Is the dual-emitter configuration (pins 2 and 4) internally connected?
No - pins 2 and 4 are separate emitter terminals electrically isolated within the die. They share the same emitter region but are bonded to distinct package leads to provide redundant thermal paths and layout flexibility for grounding.
Does the AEC-Q101 qualification cover full temperature range operation?
Yes - the qualification report covers operation from –40 °C to +125 °C ambient, including temperature cycling, HTRB, and ESD testing per AEC-Q101 Rev D. Data sheet limits (e.g., VCEO derating above 25 °C) remain applicable per JEDEC JESD22-A108.
BFP420E6433HTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Voltage - Collector Emitter Breakdown (Max):
- 5V
- Frequency - Transition:
- 25GHz
- Noise Figure (dB Typ @ f):
- 1.1dB @ 1.8GHz
- Gain:
- 21dB
- Power - Max:
- 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 20mA, 4V
- Current - Collector (Ic) (Max):
- 35mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT343-3D
BFP420E6433HTMA1 FAQ
1.How can I place an order for BFP420E6433HTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BFP420E6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BFP420E6433HTMA1 reliable?
The price and inventory of BFP420E6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP420E6433HTMA1 is usually 5 days.
3.What payment methods are accepted for BFP420E6433HTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP420E6433HTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BFP420E6433HTMA1?
BFP420E6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BFP420E6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BFP420E6433HTMA1?
For technical support, including BFP420E6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP420E6433HTMA1 requirements.
6.How does Aetrix verify that BFP420E6433HTMA1 is sourced from the original manufacturer or authorized distributors?
All BFP420E6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP420E6433HTMA1 meets industry standards.
7.What is the process for return or replacement of BFP420E6433HTMA1?
All BFP420E6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFP420E6433HTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BFP420E6433HTMA1 part is unused and in its original packaging.
Return procedure for BFP420E6433HTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BFP420E6433HTMA1 Tags
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BFR182WH6327XTSA1
Infineon Technologies
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BFR92PE6327HTSA1
Infineon Technologies
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BFR360FH6327XTSA1
Infineon Technologies
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BFR193FH6327XTSA1
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BFR460L3E6327XTMA1
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MMBTH81
onsemi
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BFU520WX
NXP USA Inc.
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BFP840FESDH6327XTSA1
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BFP650H6327XTSA1
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BFU520AR
NXP USA Inc.
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BFS483H6327XTSA1
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