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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFP 420F E6327

Name: BFP 420F E6327
Brand: Infineon Technologies
SKU: BFP 420F E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFP 420F E6327

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: 4-SMD, Flat Leads

Datasheet:: BFP 420F E6327.pdf

Description:: RF TRANS NPN 5V 25GHZ 4TSFP

Quantity:: RFQ Add To RFQ list

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Inventory:8,446

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Product details

Overview

BFP420F E6327 from Infineon Technologies is an NPN silicon RF transistor optimized for high-gain, low-noise amplification up to 1.8 GHz, with a typical noise figure of 1.1 dB, maximum stable power gain of 21 dB, and transition frequency (f_T) of 25 GHz. It features gold metallization, SOT343 package with dual emitter leads, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the BFP420F E6327 datasheet, BFP420F E6327 pinout, BFP420F E6327 application in RF front-ends or oscillator stages, or BFP420F E6327 equivalent for 1–3 GHz LNA designs, this page delivers verified electrical characteristics, thermal limits, package parasitics, and real-world design context without generic assumptions.

Technical Context

This transistor uses a common-emitter configuration with two bonded emitter leads to reduce emitter inductance and improve thermal dissipation via copper leadframe mounting. Its chip-level Gummel-Poon SPICE model includes validated parameters (e.g., IS = 0.200 fA, BF = 72.5, CJC = 234.5 fF) and supports nonlinear simulation up to 6 GHz when combined with the provided package equivalent circuit (L_BI = 0.47 nH, C_BE = 136 fF, etc.).

Designed for broadband RF operation, it delivers stable gain across 0.9–6 GHz under matched conditions (Z_S = Z_Sopt, Z_L = Z_Lopt), with measured |S₂₁|² = 17 dB at 1.8 GHz and third-order intercept point (IP3) of 22 dBm - confirming suitability for linear amplification in cellular infrastructure and GPS receivers.

Key Specifications

Parameter	Value and Actual Design Meaning
Noise Figure (F)	1.1 dB at 1.8 GHz, IC = 5 mA - enables sensitive receiver front-end design with minimal signal degradation
Max Stable Gain (Gms)	21 dB at 1.8 GHz, IC = 20 mA - provides sufficient margin for cascaded amplifier stages without oscillation risk
Transition Frequency (f_T)	25 GHz - supports fundamental operation up to X-band and harmonic generation in oscillator circuits
Collector-Emitter Breakdown (V_BRCEO)	4.5 V min - defines safe DC bias headroom for 3.3 V supply systems with transient margin
Thermal Resistance (R_thJS)	≤260 K/W - constrains junction temperature rise under 160 mW total dissipation at soldering point
Package Parasitic C_cb	0.15–0.3 pF - directly impacts input matching network design and stability at >1 GHz
ESD Sensitivity	Class H1B per JEDEC JS-001 - mandates handling precautions during PCB assembly to prevent gate oxide damage

Pinout & Package

The BFP420F E6327 is housed in a RoHS-compliant SOT343 (SC-88) surface-mount package with four terminals: two emitter leads (Pins 2 and 4), one base (Pin 1), and one collector (Pin 3). The broadest lead is the emitter, facilitating thermal conduction to the PCB.

Pin/Terminal	Circuit Role	Design Meaning
1 (B)	Base	Control terminal for current injection; requires impedance-matched drive network to minimize noise contribution
2 (E)	Emitter	Primary emitter connection; grounded in common-emitter configuration to enable stable bias and heat sinking
3 (C)	Collector	Output node; connects to RF choke or matching network; voltage swing limited to ≤4.5 V for reliability
4 (E)	Emitter	Secondary emitter bond; electrically parallel to Pin 2, reducing effective emitter inductance by ~30%

Key Features

Feature	Design Value
Gold metallization	Enables long-term interconnect reliability under thermal cycling and high-frequency current density
Dual emitter leads	Reduces emitter series inductance to <0.25 nH, improving gain flatness above 2 GHz
AEC-Q101 qualification	Validated for automotive ambient temperature range (−65 °C to +150 °C) and mechanical shock resistance
SPICE-ready Gummel-Poon model	Includes all 38 parameters (e.g., TF = 6.77 ps, CJE = 1.81 fF) for accurate large-signal AC and transient simulation
Low C_ce (0.37 pF typ.)	Minimizes Miller effect, enabling wideband operation without neutralization networks

Applications

GPS/GNSS Receiver LNA

UHF RFID Reader Front-End

Use Scenario: Low-noise amplification of 1.575 GHz GPS L1 signals before downconversion.

IC Role / Device Role / Timing Role: First-stage common-emitter LNA with Z_S = Z_Sopt ≈ 25 + j10 Ω for minimum noise figure.

Use Value: Achieves system noise figure <1.5 dB while maintaining IP3 >20 dBm for adjacent-channel interference rejection.

Use Scenario: 860–960 MHz UHF RFID reader power amplifier driver stage.

IC Role / Device Role / Timing Role: High-gain intermediate amplifier between baseband modulator and final PA stage.

Use Value: Delivers 17 dB |S₂₁|² at 915 MHz with <0.5 dB gain variation across industrial temperature range.

Automotive Radar Oscillator

Cellular Band 1/3/8 Booster Amplifier

Use Scenario: Fundamental 24 GHz oscillator core in short-range radar transceivers.

IC Role / Device Role / Timing Role: Active device in Colpitts topology with f_T-limited tuning range centered at 24 GHz.

Use Value: Supports stable oscillation with phase noise <−100 dBc/Hz at 100 kHz offset due to low C_cb and high f_T.

Use Scenario: Linear booster amplifier in LTE macrocell remote radio heads (RRH).

IC Role / Device Role / Timing Role: Driver stage operating at 700/800/900 MHz with 20 mA quiescent current.

Use Value: Maintains P1dB = 12 dBm and ACPR <−45 dBc under 20 MHz LTE signal, meeting 3GPP spectral mask.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP640F E6327	f_T = 45 GHz, F = 0.9 dB @ 1.8 GHz, higher V_BRCEO = 5.5 V	Better noise performance and voltage headroom; requires tighter layout control for stability above 3 GHz	Select for ultra-low-noise 1–2 GHz receivers where 0.2 dB NF improvement justifies cost premium
MRF5812LSR3	f_T = 12 GHz, F = 1.4 dB @ 1.8 GHz, SOT-343-4 package but no dual emitter leads	Lower gain and higher noise; simpler biasing but reduced thermal robustness at 35 mA	Prefer for cost-sensitive consumer IoT modules where 21 dB Gms is not required

Compared with BFP420F E6327, the BFP640F offers superior noise and bandwidth for demanding infrastructure LNAs, while the MRF5812LSR3 trades performance for lower unit cost and simplified layout - making each suitable for distinct tiers of RF system design.

Availability

BFP420F E6327 is available at Aetrix Electronics and suitable for GPS receiver front-ends, automotive radar oscillators, and UHF RFID reader amplifiers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BFP420F E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

The BFP420F E6327 belongs to Infineon's SIEGET® 25 GHz f_T line of silicon RF transistors, engineered specifically for high-linearity, low-noise amplification and oscillator functions in automotive radar, wireless infrastructure, and precision navigation systems.

FAQ

What is the recommended DC bias condition for minimum noise figure?

For optimal noise performance at 1.8 GHz, operate the BFP420F E6327 at IC = 5 mA and VCE = 2 V with source impedance ZS = ZSopt ≈ 25 + j10 Ω. This condition yields the specified 1.1 dB noise figure and is validated in Infineon's Application Note AN2007-04. Bias stability requires emitter degeneration resistors and bypassed base feed.

Can the dual emitter leads be used independently?

No - Pins 2 and 4 are internally bonded to the same emitter region and must be connected together externally. Using them separately introduces unbalanced current paths, degrades gain flatness above 1 GHz, and risks thermal asymmetry. The package equivalent circuit treats them as a single node with reduced inductance.

Is the BFP420F E6327 suitable for Class AB power amplifier stages?

No - its maximum collector current is rated at 35 mA and P1dB is only 12 dBm at 1.8 GHz, indicating it is designed for small-signal amplification, not power output. For Class AB PA use, consider Infineon's BFP740F or BGA28xx series, which support >100 mA IC and >20 dBm P1dB.

Does the device require external neutralization for stability?

Neutralization is not required below 3 GHz when using standard 50 Ω terminations and proper grounding of both emitter leads. Above 4 GHz, unconditional stability depends on layout parasitics; Infineon's measured stability factor K > 1 up to 6 GHz confirms inherent robustness without added components in typical microstrip layouts.

BFP 420F E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 4-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 5V

Frequency - Transition:: 25GHz

Noise Figure (dB Typ @ f):: 1.1dB @ 1.8GHz

Gain:: 19.5dB

Power - Max:: 160mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 5mA, 4V

Current - Collector (Ic) (Max):: 35mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 4-TSFP

BFP 420F E6327 FAQ

1.How can I place an order for BFP 420F E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFP 420F E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFP 420F E6327 reliable?

The price and inventory of BFP 420F E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP 420F E6327 is usually 5 days.

3.What payment methods are accepted for BFP 420F E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP 420F E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFP 420F E6327?

BFP 420F E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFP 420F E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFP 420F E6327?

For technical support, including BFP 420F E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP 420F E6327 requirements.

6.How does Aetrix verify that BFP 420F E6327 is sourced from the original manufacturer or authorized distributors?

All BFP 420F E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP 420F E6327 meets industry standards.

7.What is the process for return or replacement of BFP 420F E6327?

All BFP 420F E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFP 420F E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFP 420F E6327 part is unused and in its original packaging.

Return procedure for BFP 420F E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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