Infineon Technologies BFP420H6740XTSA1

Overview

BFP420H6740XTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor in SOT343 package, designed for high-gain, low-noise amplifier stages at 1.8 GHz. It delivers NFmin = 1.1 dB, Gms = 21 dB, fT = 25 GHz, and supports oscillators up to 10 GHz in mobile front-end and GPS receiver applications.

For engineers reviewing the BFP420H6740XTSA1 datasheet, BFP420H6740XTSA1 pinout, BFP420H6740XTSA1 application, or BFP420H6740XTSA1 equivalent, key selection criteria include noise figure at 1.8 GHz, maximum stable power gain, transition frequency, collector-emitter breakdown voltage, and thermal resistance RthJS = 250 K/W.

Technical Context

This NPN RF transistor operates with VCE = 2–4 V and IC = 5–20 mA bias points optimized for minimal noise and maximum stable gain. Its fT of 25 GHz and Ccb ≤ 0.3 pF enable broadband amplification from 0.9 to 6 GHz while maintaining ZSopt impedance matching across frequency bands.

The device uses a monolithic silicon epitaxial structure with visible-lead SOT343 packaging, qualified per AEC-Q101 for automotive-grade reliability. ESD sensitivity (Class 1C) requires handling per JEDEC JS-001, and thermal design must account for RthJS = 250 K/W referenced to emitter solder point.

Key Specifications

Pinout & Package

SOT343 package: 4-pin plastic surface-mount with visible leads, lead-free and halogen-free, footprint compatible with JEDEC MO-193AA.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFP420H6740XTSA1, BFP640FESD offers superior high-frequency noise performance but requires tighter layout control, while MRF5812 trades SMT scalability and thermal efficiency for mechanical robustness in non-automated assembly.

Availability

BFP420H6740XTSA1 is available at Aetrix Electronics and suitable for GPS receivers, cellular front-ends, ISM-band oscillators, and automotive radar modules requiring stable component supply across industrial and automotive production cycles.

Supply support for BFP420H6740XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon bipolar and GaAs RF transistor technologies.

The BFP420 belongs to Infineon's high-frequency silicon bipolar transistor product line, engineered specifically for low-noise, high-gain RF amplification and oscillator circuits in sub-6 GHz wireless infrastructure and mobile terminals.

FAQ

What is the recommended DC bias condition for minimum noise figure?

For NFmin = 1.1 dB at 1.8 GHz, use IC = 5 mA and VCE = 2 V with source impedance ZS = ZSopt ≈ 50 + j25 Ω. This bias point is validated in the datasheet and reflected in the SPICE GP model. Higher collector currents increase gain but degrade noise figure beyond 10 mA.

Is the BFP420H6740XTSA1 suitable for 5G NR sub-6 GHz bands?

Yes - its fT = 25 GHz and Gms = 21 dB at 3.5 GHz make it viable for 3.3–4.2 GHz n77/n78 band LNAs. However, IP3 = 22 dBm limits use to low-Power Class 1 receivers; for base station front-ends, consider BFP640FESD with 28 dBm IP3.

How does the dual-emitter configuration affect thermal performance?

Pins 2 and 4 are internally connected emitters, providing parallel thermal paths to PCB copper. This reduces effective RthJS by ~15% versus single-emitter SOT343 variants, enabling 210 mW total dissipation at TS = 98 °C per the datasheet derating curve.

Does Infineon provide S-parameter files for this part?

Yes - S-parameter data (including noise parameters) is available on Infineon's RF models portal (www.infineon.com/rf.models) in Touchstone format (.s2p), covering 0.1–10 GHz with bias-dependent datasets for IC = 5/20 mA and VCE = 2/4 V.