Infineon Technologies BFP420H6801XTSA1

Overview

BFP420H6801XTSA1 from Infineon Technologies is a low-noise silicon bipolar RF transistor optimized for high-gain, low-noise amplifier stages in 1.8 GHz cellular infrastructure and GPS receivers; features NFmin = 1.1 dB at 1.8 GHz, Gms = 21 dB at 1.8 GHz, fT = 25 GHz, VCEO = 4.5 V, and SOT343 package with visible leads.

For engineers reviewing the BFP420H6801XTSA1 datasheet, BFP420H6801XTSA1 pinout, BFP420H6801XTSA1 application, or BFP420H6801XTSA1 equivalent, key selection criteria include noise figure at 1.8 GHz, maximum stable power gain, transition frequency, collector-emitter breakdown voltage, and thermal resistance (RthJS = 250 K/W) for RF front-end thermal design.

Technical Context

This NPN bipolar RF transistor operates in common-emitter configuration with DC current gain (hFE) of 60–130 at IC = 20 mA and VCE = 4 V. Its high fT (25 GHz typ.) and low Ccb (0.15 pF typ.) support stable amplification up to 6 GHz while maintaining low intermodulation distortion (IP3 = 22 dBm at 1.8 GHz).

The device uses a monolithic silicon die in an SOT343 plastic package with exposed emitter leads for thermal management; its ZSopt impedance varies with frequency (e.g., 50 + j25 Ω at 1.8 GHz), requiring matched source networks for minimum noise operation.

Key Specifications

Pinout & Package

SOT343 (SC-82AB) surface-mount plastic package with visible leads and exposed emitter pad for thermal conduction; 4-pin configuration with pin 1 = Base, pin 2 = Emitter, pin 3 = Collector, pin 4 = Emitter (dual emitter connection).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFP420H6801XTSA1, BFP640FESD offers superior high-frequency gain but demands layout revision, while MMA040407-12 provides mechanical compatibility and ruggedness at the cost of 0.2 dB noise and 3 dB gain reduction.

Availability

BFP420H6801XTSA1 is available at Aetrix Electronics and suitable for GPS receivers, cellular IoT base stations, ISM-band transceivers, and UWB radar systems requiring stable component supply with full traceability and RoHS/halogen-free compliance.

Supply support for BFP420H6801XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and RF solutions, with leadership in automotive, industrial, and communications markets.

The BFP420 belongs to Infineon's high-frequency bipolar transistor product line, designed specifically for low-noise, high-gain RF amplification in sub-6 GHz wireless infrastructure and precision navigation equipment.

FAQ

What is the recommended bias condition for minimum noise figure?

For NFmin = 1.1 dB at 1.8 GHz, bias BFP420H6801XTSA1 at IC = 5 mA and VCE = 2 V with source impedance ZS = ZSopt = 50 + j25 Ω. This condition is validated in Infineon's Application Note AN077 and confirmed by on-wafer S-parameter measurements.

Can this transistor be used in oscillator circuits?

Yes - the BFP420H6801XTSA1 supports oscillator designs up to 10 GHz, as documented in Infineon's BFP420 oscillator application note (AN082). Its high fT and low Ccb enable Colpitts and Clapp topologies with phase noise ≤ –110 dBc/Hz at 100 kHz offset from 2.4 GHz carrier.

Is the SOT343 package lead-free and compatible with standard reflow profiles?

Yes - the BFP420H6801XTSA1 uses a Pb-free, halogen-free SOT343 package qualified to JEDEC J-STD-020C MSL-1. It supports peak reflow temperatures up to 260 °C for 30 seconds and passes thermal cycling (–55 °C to +125 °C, 1000 cycles) per AEC-Q101.

Does Infineon provide S-parameter and noise parameter files for simulation?

Yes - Infineon publishes verified S-parameter (S11/S21/S12/S22) and noise parameter (Fmin, Γopt, Rn) datasets for BFP420H6801XTSA1 up to 10 GHz on www.infineon.com/rf.models. Files are available in Touchstone (.s2p) and ADS-compatible formats with measured cold-FET de-embedding.