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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFP450

Name: BFP450
Brand: Infineon Technologies
SKU: BFP450
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFP450

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: -

Datasheet:: BFP450.pdf

Description:: RF SMALL SIGNAL BIPOLAR TRANSIST

Quantity:: RFQ Add To RFQ list

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Inventory:118,871

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Product details

Overview

BFP450 from Infineon Technologies is a high-linearity, low-noise NPN silicon bipolar RF transistor optimized for driver amplifier and LNA applications up to 3 GHz. It delivers OP1dB = 19 dBm and OIP3 = 31 dBm at 1.9 GHz (V_CE = 3 V, I_C = 90 mA), with NF_min = 1.7 dB and f_T ≈ 24 GHz - enabling energy-efficient front-end designs in 1.9 GHz cordless phones and 2.4 GHz WLAN systems.

For engineers reviewing the BFP450 datasheet, BFP450 pinout, BFP450 application, or BFP450 equivalent, key selection criteria include its SOT343 package compatibility, dual-emitter configuration for bias flexibility, linearity performance at low quiescent current (50–90 mA), and validated suitability for ISM band amplifiers and active antenna LNAs.

Technical Context

The BFP450 employs a high-voltage NPN structure with V_CEO = 4.5 V and I_C_max = 170 mA, supporting robust operation in gain-block and driver stages. Its f_T ≈ 24 GHz and G_ma = 15.5 dB at 1.9 GHz confirm wideband small-signal amplification capability under standard 50 Ω matching conditions.

Designed for low-noise, high-linearity RF signal paths, it achieves NF_min = 1.7 dB at 1.9 GHz with Z_S = Z_opt, and maintains OIP3 ≥ 31 dBm across 900 MHz–2.4 GHz - indicating strong third-order intermodulation suppression in multi-carrier environments.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	≈24 GHz - enables stable small-signal gain up to 3 GHz without parasitic roll-off
OP1dB @ 1.9 GHz	19 dBm at V_CE = 3 V, I_C = 90 mA - defines usable output power before 1-dB compression in 50 Ω systems
OIP3 @ 1.9 GHz	31 dBm at V_CE = 3 V, I_C = 90 mA - quantifies linearity margin for two-tone signals in receiver front-ends
NF_min @ 1.9 GHz	1.7 dB at V_CE = 3 V, I_C = 50 mA - sets lowest achievable noise floor when source-matched
G_ma @ 1.9 GHz	15.5 dB at V_CE = 3 V, I_C = 50 mA - maximum available power gain under conjugate match
V_CEO	4.5 V - supports supply headroom for Class-A/AB driver stages with 3–5 V rails
I_C_max	170 mA - allows thermal-safe operation at high linearity bias points

Pinout & Package

Package: SOT343 - surface-mount plastic package with visible leads, RoHS-compliant and halogen-free, footprint compatible with JEDEC MO-203-AB.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control terminal for forward-biased NPN operation; requires DC bias network for stable class-A operation
2	Emitter (E)	Common emitter node; dual-emitter configuration (pins 2 and 4) enables differential or cascode biasing
3	Collector (C)	RF output/power delivery node; connected to V_CC via RF choke or matching network
4	Emitter (E)	Second emitter terminal - provides layout flexibility for thermal symmetry or AC grounding in broadband designs

Key Features

Feature	Design Value
High linearity at low I_C	OP1dB = 19 dBm and OIP3 = 31 dBm achieved at only 90 mA - reduces power consumption vs. GaAs alternatives
Low-noise optimization	NF_min = 1.7 dB at 1.9 GHz with Z_S = Z_opt - enables high-sensitivity receive paths in GPS and SDARS antennas
Dual-emitter SOT343 layout	Pins 2 and 4 both emitter - simplifies thermal balancing and supports cascode configurations without external emitter ties
25 GHz silicon bipolar process	Infineon's qualified high-volume Si bipolar technology - ensures consistency in RF parametric yield and reliability
AEC-Q101 qualified	Qualified per AEC-Q101 Rev D - supports automotive-grade RF modules requiring extended temperature and lifetime validation

Applications

ISM Band Driver Amplifier

1.9 GHz Cordless Phone PA

Use Scenario: Final-stage driver in 868 MHz ISM transceivers for industrial telemetry and smart metering.

IC Role / Device Role / Timing Role: Linear gain block providing +19 dBm saturated output while maintaining ETSI spectral mask compliance.

Use Value: Enables single-transistor driver stage without external harmonic filtering due to high OIP3 and low distortion at 90 mA bias.

Use Scenario: Power amplifier driver in DECT 2.0 base station transmit chains operating at 1.88–1.90 GHz.

IC Role / Device Role / Timing Role: High-gain, low-phase-noise driver preceding GaAs final PA - minimizes LO pulling and adjacent channel leakage.

Use Value: Delivers 15.5 dB G_ma with NF_min = 1.7 dB, improving overall system noise figure and dynamic range.

2.4 GHz WLAN LNA

Active GPS Antenna Front-End

Use Scenario: First-stage LNA in dual-band 2.4/5 GHz Wi-Fi access point receivers.

IC Role / Device Role / Timing Role: Low-noise, high-input-IP3 amplifier with 50 Ω input match - preserves SNR in crowded 2.4 GHz ISM band.

Use Value: Achieves NF₅₀ ≤ 2.0 dB and OIP3 ≥ 29 dBm at 2.4 GHz, reducing need for cascaded LNAs and lowering BOM cost.

Use Scenario: Integrated LNA in compact GPS/GLONASS active patch antennas for automotive navigation.

IC Role / Device Role / Timing Role: Ultra-low-noise amplifier with Z_opt ≈ 25 + j15 Ω - matched to ceramic GPS antenna impedance for maximum sensitivity.

Use Value: Enables -162 dBm GPS signal acquisition at 1.575 GHz with <1.7 dB NF_min, extending time-to-first-fix in urban canyons.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise, high-linearity RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NE68133	Higher V_CEO = 6 V but lower f_T = 12 GHz; NF_min = 2.0 dB at 1.9 GHz	Preferred for higher-supply (>4.5 V) industrial radios where gain bandwidth is less critical	Select if system requires >5 V supply headroom and tolerates ~2 dB higher noise floor
MRF581	Lower OIP3 = 27 dBm at 1.9 GHz; G_ma = 13.5 dB; not AEC-Q101 qualified	Suitable for cost-sensitive consumer WLAN clients where automotive qualification is unnecessary	Choose for non-automotive 2.4 GHz client devices needing proven manufacturability but no AEC-Q101 traceability

Compared with NE68133 and MRF581, the BFP450 uniquely balances 24 GHz f_T, 1.7 dB NF_min, and AEC-Q101 qualification - making it optimal for automotive-grade 1.9 GHz and 2.4 GHz front-ends demanding simultaneous linearity, noise, and reliability.

Availability

BFP450 is available at Aetrix Electronics and suitable for ISM band driver amplifiers, 1.9 GHz cordless phone PAs, and 2.4 GHz WLAN LNAs requiring stable component supply, consistent RF parametric performance, and automotive-grade lifecycle assurance.

Supply support for BFP450 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and manufacturing infrastructure.

The BFP450 belongs to Infineon's high-frequency silicon bipolar transistor product line, engineered specifically for low-noise, high-linearity RF amplification in wireless infrastructure, consumer connectivity, and automotive telematics.

FAQ

What is the recommended DC bias for optimal noise figure in BFP450?

The BFP450 achieves minimum noise figure (NF_min = 1.7 dB) at V_CE = 3 V and I_C = 50 mA, with source impedance Z_S = Z_opt ≈ 25 + j15 Ω at 1.9 GHz. Bias networks must stabilize this operating point against temperature drift using emitter degeneration resistors or active current sources.

Can BFP450 be used in 5 GHz WLAN applications?

No - while the BFP450 has f_T ≈ 24 GHz, its small-signal gain (G_ma) drops below 6 dB above 3.5 GHz (per Table 5-9), and OIP3 degrades significantly beyond 3 GHz. It is validated for use up to 3 GHz; 5 GHz WLAN requires higher-f_T GaAs or GaN devices.

Is the dual-emitter configuration (pins 2 and 4) internally connected?

No - pins 2 and 4 are separate emitter terminals, not internally shorted. This allows independent AC grounding, differential biasing, or cascode implementation. Layout must treat them as distinct nodes unless externally tied per circuit requirements.

Does BFP450 require external matching networks for 50 Ω systems?

Yes - the BFP450 is not inherently 50 Ω matched. Input (S11) and output (S22) reflection coefficients deviate significantly from 50 Ω across frequency (Figures 5-13 and 5-15); discrete or microstrip matching networks are required to achieve target gain, noise, and return loss in practical PCB layouts.

BFP450 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Transistor Type:: -

Voltage - Collector Emitter Breakdown (Max):: -

Frequency - Transition:: -

Noise Figure (dB Typ @ f):: -

Gain:: -

Power - Max:: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Current - Collector (Ic) (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

BFP450 FAQ

1.How can I place an order for BFP450 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFP450 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFP450 reliable?

The price and inventory of BFP450 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP450 is usually 5 days.

3.What payment methods are accepted for BFP450?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP450 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFP450?

BFP450 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFP450 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFP450?

For technical support, including BFP450 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP450 requirements.

6.How does Aetrix verify that BFP450 is sourced from the original manufacturer or authorized distributors?

All BFP450 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP450 meets industry standards.

7.What is the process for return or replacement of BFP450?

All BFP450 units undergo pre-shipment inspection (PSI). If there is an issue with BFP450, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFP450 part is unused and in its original packaging.

Return procedure for BFP450:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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