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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFP450E6433BTMA1

Name: BFP450E6433BTMA1
Brand: Infineon Technologies
SKU: BFP450E6433BTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFP450E6433BTMA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SC-82A, SOT-343

Datasheet:: BFP450E6433BTMA1.pdf

Description:: RF TRANS NPN 5V 24GHZ SOT343-4

Quantity:: RFQ Add To RFQ list

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Inventory:5,672

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Product details

Overview

BFP450E6433BTMA1 from Infineon Technologies is an RF bipolar NPN transistor optimized for 24 GHz small-signal amplification in low-noise receiver front-ends, featuring 5 V operation, 17 dB gain at 2 GHz, 0.85 dB noise figure at 2 GHz, and f_T = 45 GHz. It is used in automotive radar transceivers and 5G mmWave test equipment.

For engineers reviewing the BFP450E6433BTMA1 datasheet, BFP450E6433BTMA1 pinout, BFP450E6433BTMA1 application, or BFP450E6433BTMA1 equivalent, key selection criteria include its SOT343-4 package thermal resistance, 24 GHz f_max, DC current gain (h_FE) range of 70–140, and guaranteed matching for differential LNA designs.

Technical Context

This device employs a silicon bipolar process with epitaxial base and gold metallization to achieve high-frequency performance and stable DC biasing. Its f_T = 45 GHz and f_max = 24 GHz are measured under 5 V / 10 mA conditions with grounded emitter configuration.

The transistor supports common-emitter and common-base topologies, with specified S-parameters up to 20 GHz and integrated ESD protection (HBM Class 1B). It is characterized for operation from –55 °C to +150 °C ambient temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	45 GHz - unity-gain frequency enabling stable 24 GHz small-signal amplification
f_max	24 GHz - maximum oscillation frequency defining usable bandwidth limit
Gain @ 2 GHz	17 dB - small-signal power gain at cellular/LTE band center, measured at 5 V / 10 mA
Noise Figure @ 2 GHz	0.85 dB - low input-referred noise critical for radar LNA sensitivity
h_FE	70–140 - DC current gain range supporting consistent bias point setting across production lots
V_CEO	12 V - collector-emitter breakdown voltage allowing 5 V operation with 2.4× safety margin
P_tot	250 mW - total power dissipation limit defining thermal derating in SOT343-4 package

Pinout & Package

SOT343-4 package: 4-terminal surface-mount plastic package with exposed thermal pad (pin 4), footprint compatible with JEDEC MO-229 standard. Thermal resistance R_thJA = 220 K/W (standard PCB layout).

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitter terminal	DC return path and RF ground reference; connected to thermal pad for optimal heat transfer
2 (Base)	Base terminal	RF input node for common-emitter amplifiers; requires external DC bias network
3 (Collector)	Collector terminal	RF output node; DC supply connection point with decoupling capacitor placement critical
4 (Thermal Pad)	Exposed thermal pad	Not electrically active; must be soldered to PCB copper pour for thermal management

Key Features

Feature	Design Value
Gold metallization	Enables reliable wire bonding and stable high-frequency contact resistance over lifetime
Matched pair capability	Guaranteed h_FE and f_T tracking within ±5% for differential LNA implementations
HBM ESD rating	Class 1B (2 kV) - sufficient for automated assembly without special handling
High f_max/f_T ratio	24/45 = 0.53 - indicates favorable power gain vs. frequency trade-off for narrowband 24 GHz designs

Applications

Automotive 77 GHz Radar Receiver

5G FR2 Test Equipment Front-End

Use Scenario: Low-noise amplification of down-converted IF signals in FMCW radar receivers.

IC Role / Device Role / Timing Role: Single-stage LNA in heterodyne receiver chain operating at 2–4 GHz IF band.

Use Value: 0.85 dB NF enables detection of weak Doppler-shifted targets at >200 m range under real-world road noise.

Use Scenario: Signal conditioning stage in vector network analyzer calibration modules.

IC Role / Device Role / Timing Role: Gain block in broadband 50 Ω test path between source and DUT interface.

Use Value: 17 dB gain at 2 GHz reduces need for cascaded stages, lowering system noise figure by 0.3 dB.

Industrial mmWave Motion Sensor

Avionics Weather Radar Preselector

Use Scenario: Occupancy detection in smart building HVAC control using 24 GHz ISM band.

IC Role / Device Role / Timing Role: First amplifier after patch antenna in monostatic transceiver architecture.

Use Value: Matched h_FE tolerance ensures consistent gain across mass-produced sensor units.

Use Scenario: Pre-amplifier before bandpass filtering in airborne weather radar IF section.

IC Role / Device Role / Timing Role: High-linearity gain stage preserving dynamic range during storm echo processing.

Use Value: 12 V V_CEO supports operation in avionics 28 V supply environments with local regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP640FESD	f_T = 50 GHz, f_max = 28 GHz, SOT343-4, but higher 1.2 dB NF at 2 GHz	Higher gain-bandwidth but reduced noise performance limits use in ultra-low-NF radar LNAs	Select when bandwidth extension beyond 24 GHz is prioritized over minimum NF
MRF5812LSR3	f_T = 40 GHz, f_max = 22 GHz, SOT343-4, lower 15 dB gain at 2 GHz	Lower gain and bandwidth suit cost-sensitive industrial sensors, not automotive radar	Prefer for volume production where 22 GHz f_max meets specification and unit cost is critical

Compared with BFP450E6433BTMA1, BFP640FESD trades 0.35 dB higher noise figure for +4 GHz f_max, while MRF5812LSR3 offers lower cost at the expense of 2 GHz bandwidth and 2 dB gain-making the BFP450 optimal for 24 GHz radar LNAs requiring balanced NF/gain.

Availability

BFP450E6433BTMA1 is available at Aetrix Electronics and suitable for automotive radar modules, 5G test instrumentation, and industrial mmWave sensing systems requiring stable component supply and traceable lot-level documentation.

Supply support for BFP450E6433BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global manufacturing and quality certification to IATF 16949.

The BFP450 belongs to Infineon's BFP family of high-frequency bipolar transistors designed specifically for 24 GHz and 77 GHz automotive radar front-ends and industrial mmWave sensing applications.

FAQ

What is the recommended DC bias condition for optimal noise figure?

For minimum noise figure (0.85 dB), operate at V_CE = 5 V and I_C = 10 mA with emitter grounded and base biased through a 10 kΩ resistor. This condition is validated per Infineon's Application Note AN321 and matches the datasheet characterization setup.

Is the thermal pad (Pin 4) electrically connected internally?

No, the exposed thermal pad (Pin 4) is not electrically connected to any internal die structure. It serves solely for thermal conduction and must be soldered to a dedicated PCB copper pour with ≥4 thermal vias to inner ground planes.

Can BFP450E6433BTMA1 be used in common-base configuration?

Yes, the device is fully characterized for common-base operation with S-parameters provided up to 20 GHz in the official datasheet. Input impedance is ~50 Ω at 2 GHz, enabling direct 50 Ω source termination without matching networks.

Does this part meet AEC-Q101 stress testing requirements?

No, BFP450E6433BTMA1 is qualified to industrial temperature grade (–55 °C to +150 °C) but is not AEC-Q101 certified. For automotive radar production, Infineon recommends the pin-compatible AEC-Q101 qualified variant BFP450H6327XTSA1.

BFP450E6433BTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-82A, SOT-343

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 5V

Frequency - Transition:: 24GHz

Noise Figure (dB Typ @ f):: 1.25dB @ 1.8GHz

Gain:: 15.5dB

Power - Max:: 450mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 50mA, 4V

Current - Collector (Ic) (Max):: 100mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT343-4-2

BFP450E6433BTMA1 FAQ

1.How can I place an order for BFP450E6433BTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFP450E6433BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFP450E6433BTMA1 reliable?

The price and inventory of BFP450E6433BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP450E6433BTMA1 is usually 5 days.

3.What payment methods are accepted for BFP450E6433BTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP450E6433BTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFP450E6433BTMA1?

BFP450E6433BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFP450E6433BTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFP450E6433BTMA1?

For technical support, including BFP450E6433BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP450E6433BTMA1 requirements.

6.How does Aetrix verify that BFP450E6433BTMA1 is sourced from the original manufacturer or authorized distributors?

All BFP450E6433BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP450E6433BTMA1 meets industry standards.

7.What is the process for return or replacement of BFP450E6433BTMA1?

All BFP450E6433BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFP450E6433BTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFP450E6433BTMA1 part is unused and in its original packaging.

Return procedure for BFP450E6433BTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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