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Infineon Technologies BFP450H6433XTMA1
- Part No.:
- BFP450H6433XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar RF Transistors
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BFP450H6433XTMA1.pdf
- Description:
- RF TRANS NPN 5V 24GHZ SOT343-4
- Quantity:
- Payment:
- Shipping:
Inventory:5,151
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Product details
Overview
BFP450H6433XTMA1 from Infineon is a silicon NPN RF bipolar transistor in SOT343 package, designed for low-noise amplification at 1.8 GHz with NFmin = 0.9 dB, Gms = 21.5 dB, OIP3 = 24.5 dBm, and ESD robustness of 1 kV (HBM), deployed in LNB local oscillators and CATV/DVB-T broadband LNAs.
For engineers reviewing the BFP450H6433XTMA1 datasheet, BFP450H6433XTMA1 pinout, BFP450H6433XTMA1 application, or BFP450H6433XTMA1 equivalent, key selection criteria include noise figure at 5 mA bias, transducer gain at 20 mA, output IP3 linearity, ESD tolerance, and SOT343 thermal resistance (RthJS = 290 K/W).
Technical Context
This grounded-emitter SIEGET™ transistor operates with VCE = 2 V and supports RF amplification up to 3 GHz, delivering stable small-signal gain (Gms = 21.5 dB @ 1.8 GHz) and high-frequency transition (fT = 21–30 GHz) under pulsed DC conditions. Its ESD-protected structure enables reliable handling without external protection circuitry.
Designed for impedance-matched 50 Ω systems, it achieves minimum noise figure only with optimized source impedance (Γopt), and its OIP3 performance is validated using 50 Ω terminations across 0.1–6 GHz - critical for intermodulation-limited receiver front-ends in DAB/DMB and FM/AM radio.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| NFmin | 0.9 dB at 1.8 GHz, 2 V, 5 mA - sets baseline sensitivity limit for LNA input stage |
| Gms | 21.5 dB at 1.8 GHz, 2 V, 20 mA - defines small-signal power gain under typical CATV bias |
| OIP3 | 24.5 dBm at 1.8 GHz, 2 V, 20 mA - determines two-tone dynamic range before third-order distortion dominates |
| fT | 21–30 GHz - enables stable gain extension into UHF and low microwave bands |
| ESD HBM | 1 kV typical - allows direct PCB assembly without additional ESD guard rings |
| RthJS | 290 K/W - constrains maximum continuous power dissipation to 250 mW at TS ≤ 77 °C |
Pinout & Package
SOT343 surface-mount plastic package with 4-terminal configuration: compact 2.1 × 2.0 × 0.95 mm footprint, lead-free, RoHS-compliant, rated for industrial temperature range (−55 °C to +150 °C junction).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B) | Base | DC bias and RF input node; requires external matching network for Γopt |
| 2 (E) | Emitter | AC ground reference; dual emitter pins (2 & 4) reduce series inductance for RF stability |
| 3 (C) | Collector | RF output and DC supply node; connects to VCE = 2 V supply via RF choke |
| 4 (E) | Emitter | Second emitter terminal - paralleled with Pin 2 to minimize emitter degeneration in-band |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise architecture | SIEGET™ grounded-emitter topology reduces base resistance and flicker noise, enabling sub-1 dB NF at 1.8 GHz |
| Integrated ESD protection | On-chip diode structure provides 1 kV HBM rating without sacrificing RF performance or requiring external clamps |
| High fT / low CCB trade-off | 0.14–0.24 pF collector-base capacitance supports wideband matching while maintaining >21 GHz fT |
| Pulsed DC characterization | All AC specs (Gms, NFmin, OIP3) measured under pulse conditions to eliminate self-heating artifacts |
Applications
| LNB Local Oscillator Driver | CATV Broadband LNA |
|---|---|
Use Scenario: Amplifies 950–2150 MHz IF signal in satellite TV low-noise block downconverters prior to mixing. IC Role / Device Role / Timing Role: Low-noise voltage-controlled amplifier stage driving mixer LO port with minimal phase noise contribution. Use Value: 0.9 dB NF ensures system noise figure remains below 1.2 dB, preserving carrier-to-noise ratio in weak-signal reception. | Use Scenario: Front-end gain block in 5–1002 MHz cable TV distribution amplifiers. IC Role / Device Role / Timing Role: Single-stage broadband LNA with flat gain response and high OIP3 to suppress ingress distortion. Use Value: 24.5 dBm OIP3 enables >80 dB composite second-order (CSO) and composite triple-beat (CTB) suppression at full channel load. |
| DVB-T Tuner Front-End | FM/AM Radio Receiver LNA |
Use Scenario: First amplification stage in terrestrial digital TV tuners covering 47–862 MHz band. IC Role / Device Role / Timing Role: Matched-input LNA providing 21.5 dB transducer gain with stable S-parameters across VHF/UHF. Use Value: 290 K/W thermal resistance allows sustained 20 mA operation without derating in sealed tuner modules. | Use Scenario: High-selectivity RF preamplifier in analog broadcast receivers (87.5–108 MHz FM, 530–1710 kHz AM). IC Role / Device Role / Timing Role: Low-distortion, low-current gain block operating at 5 mA to extend battery life. Use Value: 0.9 dB NF at 5 mA bias delivers best-in-class sensitivity while drawing <10 mW total DC power. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF bipolar transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP520H6327XTSA1 | Higher NFmin = 0.75 dB @ 1.8 GHz but lower OIP3 = 22.5 dBm; fT = 25 GHz | Better for ultra-low-noise receive-only paths; less suitable for high-dynamic-range CATV | Select when NF dominates over linearity; verify thermal margin at 20 mA due to identical RthJS |
| MRF5812LSR3 | Higher Ptot = 400 mW, TO-253 package; NFmin = 1.1 dB @ 1.8 GHz, OIP3 = 25.2 dBm | Preferred for higher-power LNB drivers or thermally constrained PCBs needing lower junction rise | Choose when board space permits larger package and >250 mW dissipation is required |
Compared with BFP450H6433XTMA1, BFP520 offers superior noise performance at cost of linearity, while MRF5812LSR3 trades package size for higher power headroom and slightly degraded NF - selection depends on whether noise floor, distortion floor, or thermal budget is the limiting factor.
Availability
BFP450H6433XTMA1 is available at Aetrix Electronics and suitable for LNB driver circuits, CATV distribution amplifiers, DVB-T tuner front-ends, and FM/AM radio receivers requiring stable component supply across industrial temperature ranges and long production lifecycles.
Supply support for BFP450H6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, automotive, and security ICs, with global manufacturing and qualification to JEDEC and AEC-Q standards.
The BFP450H6433XTMA1 belongs to Infineon's fifth-generation SIEGET™ RF bipolar transistor family, engineered specifically for cost-sensitive, high-volume broadband LNA and oscillator driver applications in consumer and industrial wireless infrastructure.
FAQ
What is the recommended bias condition for minimum noise figure?
The BFP450H6433XTMA1 achieves NFmin = 0.9 dB at VCE = 2 V, IC = 5 mA, and 1.8 GHz with source impedance matched to Γopt. This requires external bias network design to maintain stable 5 mA collector current while presenting optimal source reflection coefficient - typically implemented using microstrip stub matching or lumped LC networks.
Can this transistor be used in Class-A power amplifier configurations?
No - the BFP450H6433XTMA1 is characterized and qualified exclusively for small-signal linear amplification. Its absolute maximum ratings limit continuous IC to 80 mA and Ptot to 250 mW, and its OIP3 and gain compression data are specified only up to 20 mA. For power amplification, Infineon's BFP640 or BFP740 families are designated alternatives.
Is the SOT343 package lead-free and RoHS compliant?
Yes - the BFP450H6433XTMA1 uses a lead-free, halogen-free SOT343 package qualified to JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), with peak reflow temperature up to 260 °C. The device marking "AUs" indicates standard packaging with 3000 units per reel and tape-and-reel delivery per EIA-481.
How does the dual-emitter pin configuration improve RF performance?
The dual-emitter terminals (Pins 2 and 4) reduce total emitter series inductance by ~30% compared to single-emitter SOT343 variants, lowering high-frequency degeneration and improving stability margin above 1 GHz. This configuration also enhances thermal spreading across the die attach pad, contributing to the specified 290 K/W junction-to-solder-point thermal resistance.
BFP450H6433XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Voltage - Collector Emitter Breakdown (Max):
- 5V
- Frequency - Transition:
- 24GHz
- Noise Figure (dB Typ @ f):
- 1.25dB @ 1.8GHz
- Gain:
- 15.5dB
- Power - Max:
- 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 50mA, 4V
- Current - Collector (Ic) (Max):
- 100mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT343-3D
BFP450H6433XTMA1 FAQ
1.How can I place an order for BFP450H6433XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BFP450H6433XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BFP450H6433XTMA1 reliable?
The price and inventory of BFP450H6433XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP450H6433XTMA1 is usually 5 days.
3.What payment methods are accepted for BFP450H6433XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP450H6433XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BFP450H6433XTMA1?
BFP450H6433XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BFP450H6433XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BFP450H6433XTMA1?
For technical support, including BFP450H6433XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP450H6433XTMA1 requirements.
6.How does Aetrix verify that BFP450H6433XTMA1 is sourced from the original manufacturer or authorized distributors?
All BFP450H6433XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP450H6433XTMA1 meets industry standards.
7.What is the process for return or replacement of BFP450H6433XTMA1?
All BFP450H6433XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFP450H6433XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BFP450H6433XTMA1 part is unused and in its original packaging.
Return procedure for BFP450H6433XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BFP450H6433XTMA1 Tags
-
BFR182WH6327XTSA1
Infineon Technologies
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BFR92PE6327HTSA1
Infineon Technologies
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BFR360FH6327XTSA1
Infineon Technologies
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BFR193FH6327XTSA1
Infineon Technologies
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BFU550AR
NXP USA Inc.
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BFR460L3E6327XTMA1
Infineon Technologies
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MMBTH81
onsemi
-
BFU520WX
NXP USA Inc.
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BFP840FESDH6327XTSA1
Infineon Technologies
-
BFP650H6327XTSA1
Infineon Technologies
-
BFU520AR
NXP USA Inc.
-
BFS483H6327XTSA1
Infineon Technologies
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