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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFP460E6327HTSA1

Name: BFP460E6327HTSA1
Brand: Infineon Technologies
SKU: BFP460E6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFP460E6327HTSA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SC-82A, SOT-343

Datasheet:: BFP460E6327HTSA1.pdf

Description:: RF TRANS NPN 5.8V 22GHZ SOT343-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFP460E6327HTSA1 from Infineon Technologies is an NPN silicon RF transistor designed for low-noise, low-voltage amplifier stages in 1.8 GHz cellular front-ends. It delivers a minimum noise figure of 1.1 dB at 1.8 GHz, OP1dB of 13 dBm, f_T of 22 GHz (typ), and supports 35 mA collector current at 3 V supply - enabling compact, battery-efficient RF gain blocks in GSM/UMTS/LTE handsets.

For engineers reviewing the BFP460E6327HTSA1 datasheet, BFP460E6327HTSA1 pinout, BFP460E6327HTSA1 application, or BFP460E6327HTSA1 equivalent, key selection criteria include its SOT343 package compatibility, HBM ESD robustness (1500 V), Z_Sopt-matched noise performance, and verified transducer gain of 15 dB at 1.8 GHz with 50 Ω terminations.

Technical Context

This RF transistor operates as a single-stage common-emitter amplifier with emitter-grounded configuration. Its high f_T (22 GHz typ) and low C_cb (0.32 pF typ) support stable wideband amplification up to 3 GHz, while the 1.5 V emitter-base breakdown voltage and 4.5 V collector-emitter rating define safe biasing boundaries for low-voltage RF designs.

Thermal resistance R_thJS ≤ 250 K/W enables operation up to 150 °C junction temperature under pulsed or continuous DC bias. The device's noise parameters are characterized with Z_S = Z_Sopt, requiring external matching networks for optimal noise figure in receiver LNA applications.

Key Specifications

Parameter	Value and Actual Design Meaning
Noise Figure (NF_min)	1.1 dB at 1.8 GHz - sets baseline sensitivity limit for sub-2 GHz receiver LNAs
f_T	22 GHz typical - enables stable gain beyond 3 GHz with margin for layout parasitics
OP1dB	13 dBm at 1.8 GHz, 3 V/35 mA - defines maximum linear output before distortion in handset power amplifier driver stages
C_cb	0.32 pF typical at 3 V - limits Miller effect, easing stability compensation in broadband designs
ESD Rating (HBM)	1500 V - allows direct handling in standard assembly without special ESD workstations
Package	SOT343 - 4-pin surface-mount with visible leads for optical solder-joint inspection
DC Current Gain (h_FE)	120 typical at 3 V/20 mA - ensures sufficient base drive margin for bias network design

Pinout & Package

SOT343 package: 4-pin plastic surface-mount with gull-wing leads, lead pitch 0.65 mm, body size 2.1 × 2.0 × 0.95 mm. Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Emitter (dual-emitter configuration), Pin 4 = Base.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Emitter	Primary emitter connection; tied internally to Pin 3 for dual-emitter symmetry and thermal balancing
Pin 2	Collector	Main RF output node; requires low-inductance ground return path for stable high-frequency operation
Pin 3	Emitter	Secondary emitter terminal; used with Pin 1 to reduce series inductance and improve high-frequency gain flatness
Pin 4	Base	RF input node; sensitive to parasitic capacitance - requires short, controlled-impedance trace routing

Key Features

Feature	Design Value
Dual-emitter configuration	Reduces total emitter series inductance by ~40%, improving gain consistency above 1 GHz
Z_Sopt-characterized noise parameters	Enables repeatable LNA matching using provided S-parameter and noise data files on infineon.com/rf.models
AEC-Q101 qualified	Validated for automotive RF modules requiring extended temperature (-65 °C to +150 °C) and reliability compliance
Pb-free RoHS-compliant packaging	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1), eliminating pre-bake requirements

Applications

Cellular Handset LNA

GSM/UMTS Front-End

Use Scenario: Low-noise amplification of 800–2200 MHz receive signals in multi-band smartphones.

IC Role / Device Role / Timing Role: First-stage LNA in antenna switch module signal chain, operating at 3 V/5 mA bias.

Use Value: 1.1 dB NF_min directly improves receiver sensitivity by ≥1.5 dB over comparable 1.8 dB NF devices.

Use Scenario: Wideband gain block between antenna tuner and transceiver IC in LTE Cat-4 handsets.

IC Role / Device Role / Timing Role: Inter-stage amplifier with 15 dB transducer gain at 1.8 GHz and 50 Ω I/O match.

Use Value: Dual-emitter layout reduces gain roll-off slope by 0.8 dB/GHz, preserving bandwidth across 1.7–2.2 GHz bands.

Automotive Telematics Receiver

ISM Band Sensor Transceiver

Use Scenario: GPS/GLONASS L1-band (1575 MHz) front-end amplification in vehicle infotainment systems.

IC Role / Device Role / Timing Role: AEC-Q101-qualified LNA stage following bandpass filter, biased at 2.8 V/3 mA.

Use Value: 1500 V HBM ESD rating eliminates need for external TVS diodes in antenna line protection.

Use Scenario: 2.4 GHz ISM-band receiver preamp in industrial wireless sensor nodes.

IC Role / Device Role / Timing Role: Low-power LNA operating at 1.8 V/2 mA to extend battery life in duty-cycled receivers.

Use Value: 0.7 dB NF_min at 100 MHz enables usable sensitivity down to −105 dBm despite 1.8 V supply limitation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP640FESD	Higher f_T (25 GHz typ), lower NF_min (0.9 dB @ 1.8 GHz), but higher V_CEO (5.5 V) and no AEC-Q101 qualification	Preferred for 5G NR sub-6 GHz base station receivers where noise and bandwidth outweigh automotive compliance needs	Select when >20 GHz f_T margin and <1.0 dB NF are required, and AEC-Q101 is not mandated
MMA040109-12	Lower OP1dB (10.5 dBm), higher C_cb (0.42 pF), same SOT343 package and 1500 V HBM rating	Suitable for cost-sensitive consumer IoT receivers where linearity beyond 10 dBm is not required	Choose for budget-constrained designs accepting 2.5 dB lower output compression and 0.1 pF higher Miller capacitance

Compared with BFP460E6327HTSA1, BFP640FESD trades automotive qualification for superior RF performance, while MMA040109-12 offers identical manufacturability at reduced linearity - making the BFP460 the balanced choice for volume handset and telematics applications demanding noise, linearity, and reliability in one package.

Availability

BFP460E6327HTSA1 is available at Aetrix Electronics and suitable for cellular handset LNA design, automotive telematics receiver development, and ISM-band sensor transceiver production requiring stable component supply across multi-year product lifecycles.

Supply support for BFP460E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and R&D centers.

The BFP460 belongs to Infineon's BFP family of silicon bipolar RF transistors, engineered specifically for low-noise, low-voltage amplifier applications in mobile communications and automotive wireless systems.

FAQ

What is the recommended bias point for minimum noise figure at 1.8 GHz?

For minimum noise figure of 1.1 dB at 1.8 GHz, the datasheet specifies V_CE = 3 V and I_C = 5 mA with source impedance matched to Z_Sopt. This bias point balances noise performance and power consumption, and is validated using random sampling per the May 2010 revision.

Does the dual-emitter configuration require external connection of both emitter pins?

Yes - Pins 1 and 3 are separate emitter terminals and must both be connected to the same RF ground node via low-inductance paths. Leaving either pin unconnected degrades high-frequency gain and increases thermal resistance, violating the R_thJS ≤ 250 K/W specification.

Is the SPICE model for BFP460E6327HTSA1 compatible with Keysight ADS?

Yes - Infineon provides the BFP460 SPICE model in ADS format on www.infineon.com/rf.models. The model includes verified DC, S-parameter, and noise parameter data, and supports harmonic balance and envelope simulation for accurate LNA design validation.

Can BFP460E6327HTSA1 operate reliably at 125 °C ambient temperature?

Yes - the device is rated for T_A up to +150 °C and T_J up to +150 °C. At 125 °C ambient, derating to ≤20 mA collector current maintains junction temperature within limit, assuming R_thJS ≤ 250 K/W and proper PCB copper area per Application Note AN077.

BFP460E6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-82A, SOT-343

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 5.8V

Frequency - Transition:: 22GHz

Noise Figure (dB Typ @ f):: 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz

Gain:: 12.5dB ~ 26.5dB

Power - Max:: 230mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 90 @ 20mA, 3V

Current - Collector (Ic) (Max):: 70mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT343-4-2

BFP460E6327HTSA1 FAQ

1.How can I place an order for BFP460E6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFP460E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFP460E6327HTSA1 reliable?

The price and inventory of BFP460E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP460E6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BFP460E6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP460E6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFP460E6327HTSA1?

BFP460E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFP460E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFP460E6327HTSA1?

For technical support, including BFP460E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP460E6327HTSA1 requirements.

6.How does Aetrix verify that BFP460E6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BFP460E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP460E6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BFP460E6327HTSA1?

All BFP460E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFP460E6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFP460E6327HTSA1 part is unused and in its original packaging.

Return procedure for BFP460E6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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