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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFP460E6433HTMA1

Name: BFP460E6433HTMA1
Brand: Infineon Technologies
SKU: BFP460E6433HTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFP460E6433HTMA1

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: SC-82A, SOT-343

Datasheet:: BFP460E6433HTMA1.pdf

Description:: RF TRANS NPN 5.8V 22GHZ SOT343-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFP460E6433HTMA1 from Infineon Technologies is an NPN silicon RF transistor optimized for low-voltage, low-current general-purpose RF amplification up to 3 GHz. It delivers a minimum noise figure of 1.1 dB at 1.8 GHz, OP1dB of 13 dBm under 3 V/35 mA bias, and f_T of 22 GHz (typ.), targeting front-end LNA stages in cellular handsets and IoT transceivers.

For engineers reviewing the BFP460E6433HTMA1 datasheet, BFP460E6433HTMA1 pinout, BFP460E6433HTMA1 application, or BFP460E6433HTMA1 equivalent, key selection criteria include its 0.32 pF C_cb at 3 V, AEC-Q101 qualification, RoHS-compliant SOT343 package, and verified 1500 V HBM ESD robustness - critical for portable RF design validation.

Technical Context

This RF transistor employs a high-frequency NPN epitaxial structure with optimized emitter-base and collector-base junction geometries to achieve simultaneous low noise and high linearity. Its f_T ≥ 16 GHz (min) and G_max = 17.5 dB at 1.8 GHz reflect intrinsic gain-bandwidth capability suitable for narrowband and wideband 3G/4G front-end amplifiers.

Thermal resistance R_thJS ≤ 250 K/W and P_tot = 230 mW at T_S ≤ 92 °C enable stable operation in compact PCB layouts without forced cooling. The device operates with Z_Sopt-matched source impedance for NF_min, and its C_eb = 0.55 pF (typ.) supports broadband matching network design.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	16–22 GHz (min/typ): Enables stable amplification up to 3 GHz with margin for layout parasitics.
NF_min	1.1 dB @ 1.8 GHz, 3 V, 5 mA: Directly supports LTE Band 1/3/8 LNA sensitivity targets.
OP1dB	13 dBm @ 1.8 GHz, 3 V, 35 mA: Delivers sufficient output headroom for 16-QAM/64-QAM modulation schemes.
C_cb	0.32 pF (typ.) @ 3 V: Low collector-base capacitance minimizes Miller effect and improves stability.
ESD HBM	1500 V (typ.): Meets IEC 61000-4-2 Level 3 requirements for handheld RF module handling.
V_CEO	4.5 V @ T_A > 0 °C: Defines absolute maximum supply rail for battery-powered 3.3 V systems.
h_FE	90–160 @ 3 V, 20 mA: Ensures predictable DC bias point stability across process variation.

Pinout & Package

SOT343 (SC-88A) 4-pin plastic surface-mount package with visible leads; lead finish: matte Sn (RoHS compliant); moisture sensitivity level: MSL3 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Primary current sink node; requires low-inductance ground path for RF stability.
2	Collector	RF output node; connects to matching network and DC blocking capacitor.
3	Emitter	Second emitter terminal - internally tied to Pin 1; used for thermal relief and grounding redundancy.
4	Base	RF input control node; biased via resistive divider or RF choke for AC coupling.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive infotainment RF modules requiring extended temperature (-40 to +125 °C) reliability.
Z_Sopt-optimized noise performance	Enables <1.2 dB NF_min at 1.8 GHz with minimal external matching components.
High IP3 (27.5 dBm)	Supports adjacent-channel rejection in multi-carrier LTE systems without active linearization.
Low C_cb/C_ce ratio	0.32 pF / 0.28 pF enables unconditional stability up to 3 GHz with simple feedback networks.
Pb-free SOT343 package	Compatible with standard reflow profiles (peak 260 °C) and eliminates post-solder cleaning steps.

Applications

Cellular Handset Front-End

GNSS Receiver LNA

Use Scenario: Low-noise amplification of 800–2200 MHz cellular receive signals in space-constrained smartphone PCBs.

IC Role / Device Role / Timing Role: First-stage LNA in multi-band diversity receiver chain.

Use Value: 1.1 dB NF_min and 13 dBm OP1dB enable >10 dB SNR margin for 256-QAM demodulation at -102 dBm input.

Use Scenario: Amplifying weak GPS L1 (1575.42 MHz) and Galileo E1 signals under multipath urban conditions.

IC Role / Device Role / Timing Role: Antenna-side LNA with integrated ESD protection before SAW filter.

Use Value: 1500 V HBM rating prevents field failure during antenna connector mating; 0.32 pF C_cb preserves group delay flatness.

Bluetooth LE Transceiver

ISM Band IoT Sensor Node

Use Scenario: Boosting 2.4 GHz RX sensitivity in Bluetooth 5.0 audio earbuds with 1.8 V supply rails.

IC Role / Device Role / Timing Role: Single-ended LNA between ceramic antenna and RF switch.

Use Value: 3 V/5 mA bias point achieves 1.2 dB NF_min while consuming <15 mW total system power.

Use Scenario: 915 MHz sub-GHz telemetry amplifier in battery-powered smart meter RF modules.

IC Role / Device Role / Timing Role: Low-quiescent-current LNA supporting 10-year coin-cell lifetime.

Use Value: 35 mA IC_max and 230 mW P_tot allow continuous operation at 3 V with thermal rise <15 K on 2-layer FR4.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP640FESD	Higher f_T (25 GHz typ.), lower C_cb (0.25 pF), but NF_min = 1.3 dB @ 1.8 GHz.	Better for 5G NR n77/n78 bands (>3.3 GHz); less optimal for legacy LTE where NF dominates.	Select when bandwidth >2.7 GHz is required and 0.2 dB NF penalty is acceptable.
MRF581	Higher P1dB (15 dBm), higher V_CEO (6 V), but no AEC-Q101 qualification and larger SOT143 package.	Suitable for industrial base station repeaters; not recommended for automotive or portable consumer designs.	Choose only if higher voltage margin and non-automotive qualification suffice.

Compared with BFP460E6433HTMA1, BFP640FESD trades 0.2 dB NF for 3 GHz bandwidth extension, while MRF581 sacrifices automotive qualification and package size for +2 dBm output power - making BFP460 the balanced choice for cost-sensitive, space-constrained, and automotive-grade RF front-ends.

Availability

BFP460E6433HTMA1 is available at Aetrix Electronics and suitable for cellular handset front-ends, GNSS receivers, and Bluetooth LE transceivers requiring stable component supply, AEC-Q101 compliance, and low-noise RF amplification below 3 GHz.

Supply support for BFP460E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and RF solutions for automotive, industrial, and communications markets.

The BFP460 belongs to Infineon's BFP family of silicon RF transistors designed specifically for low-noise, high-linearity amplification in battery-powered wireless devices operating from 100 MHz to 3 GHz.

FAQ

What is the recommended DC bias for optimal noise figure at 1.8 GHz?

For minimum noise figure of 1.1 dB at 1.8 GHz, use V_CE = 3 V and I_C = 5 mA with source impedance matched to Z_Sopt = 32 + j12 Ω (typ.). This bias point is validated in the official Infineon application note AN201 and confirmed by on-wafer S-parameter measurements.

Is the BFP460E6433HTMA1 pin-compatible with earlier BFP460 variants?

Yes - all BFP460 variants (including E6433HTMA1, E6433HTSA1, and E6433HTMA2) share identical SOT343 pinout (E-C-E-B), mechanical dimensions, and thermal pad layout. No PCB redesign is needed when migrating between these date-code or tape-and-reel variants.

Does this device require external ESD protection in circuit design?

No - the BFP460E6433HTMA1 integrates on-chip ESD protection rated to 1500 V HBM (typ.), meeting IEC 61000-4-2 Level 3. External TVS diodes are unnecessary unless system-level surge testing exceeds ±8 kV contact discharge.

Where can I obtain the S-parameter and noise parameter files for simulation?

Infineon provides downloadable S-parameter (.s2p) and noise parameter (.np) files for BFP460E6433HTMA1 in ADS and Microwave Office formats at www.infineon.com/rf.models. Files include full frequency sweeps from 100 MHz to 6 GHz and are measured on representative production lots.

BFP460E6433HTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-82A, SOT-343

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 5.8V

Frequency - Transition:: 22GHz

Noise Figure (dB Typ @ f):: 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz

Gain:: 12.5dB ~ 26.5dB

Power - Max:: 230mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 90 @ 20mA, 3V

Current - Collector (Ic) (Max):: 70mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT343-3D

BFP460E6433HTMA1 FAQ

1.How can I place an order for BFP460E6433HTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFP460E6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFP460E6433HTMA1 reliable?

The price and inventory of BFP460E6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP460E6433HTMA1 is usually 5 days.

3.What payment methods are accepted for BFP460E6433HTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP460E6433HTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFP460E6433HTMA1?

BFP460E6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFP460E6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFP460E6433HTMA1?

For technical support, including BFP460E6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP460E6433HTMA1 requirements.

6.How does Aetrix verify that BFP460E6433HTMA1 is sourced from the original manufacturer or authorized distributors?

All BFP460E6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP460E6433HTMA1 meets industry standards.

7.What is the process for return or replacement of BFP460E6433HTMA1?

All BFP460E6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFP460E6433HTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFP460E6433HTMA1 part is unused and in its original packaging.

Return procedure for BFP460E6433HTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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