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Infineon Technologies BFP460H6327XTSA1
- Part No.:
- BFP460H6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar RF Transistors
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BFP460H6327XTSA1.pdf
- Description:
- RF TRANS NPN 5.8V 22GHZ SOT343-4
- Quantity:
- Payment:
- Shipping:
Inventory:787
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Product details
Overview
BFP460H6327XTSA1 from Infineon is a silicon NPN RF bipolar transistor in SOT343 package, designed for low-noise amplification at 1.8 GHz with NFmin = 0.9 dB, Gms = 21.5 dB, and OIP3 = 24.5 dBm under 2 V / 20 mA bias; used in LNB local oscillators and broadband CATV/DVB-T LNAs.
For engineers reviewing the BFP460H6327XTSA1 datasheet, BFP460H6327XTSA1 pinout, BFP460H6327XTSA1 application, or BFP460H6327XTSA1 equivalent, key selection criteria include noise figure at 1.8 GHz, ESD robustness (1 kV HBM), transition frequency (fT ≥ 21 GHz), DC current gain (hFE = 50–170), and SOT343 thermal resistance (RthJS = 290 K/W).
Technical Context
This grounded-emitter RF transistor uses Infineon's SIEGET™ architecture to optimize noise performance and stability. Its high fT (21–30 GHz) and low CCB (0.14–0.24 pF) support wideband operation up to 3 GHz while maintaining gain flatness and linearity.
The device integrates an on-chip ESD protection structure rated to 1 kV HBM, enabling robust handling in automated assembly without external protection. Bias conditions are optimized for 2 V collector-emitter voltage and 5–20 mA collector current across RF bands.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| NFmin | 0.9 dB at 1.8 GHz, 2 V, 5 mA - enables ultra-low-noise front-end amplification in sensitive RF receivers |
| Gms | 21.5 dB at 1.8 GHz, 2 V, 20 mA - delivers high small-signal gain for cascaded LNA stages |
| OIP3 | 24.5 dBm at 1.8 GHz, 2 V, 20 mA - supports strong interference rejection in multi-channel CATV/DAB systems |
| fT | 21–30 GHz - ensures usable gain margin beyond 2.4 GHz ISM and 3G/4G LTE bands |
| hFE | 50–170 at VCE = 3.5 V, IC = 20 mA - provides stable DC bias control for RF matching networks |
| RthJS | 290 K/W - defines thermal derating limit for continuous-wave operation at TS ≤ 77 °C |
| ESD rating | 1 kV HBM - eliminates need for external ESD clamps in PCB layout |
Pinout & Package
SOT343 surface-mount plastic package with 4-pin configuration: compact footprint (2.1 × 2.0 × 0.95 mm), lead-free, RoHS-compliant, and qualified per JEDEC JESD22 and AEC-Q101.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (B) | Base | RF input node; requires DC blocking and impedance-matching network for optimal noise performance |
| 2 (E) | Emitter | AC ground reference; connected directly to RF ground plane to minimize parasitic inductance |
| 3 (C) | Collector | RF output node; biased at 2 V via RF choke; feeds into interstage matching or filter |
| 4 (E) | Emitter | Second emitter terminal for improved thermal dissipation and grounding symmetry in high-frequency layout |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise architecture | SIEGET™ grounded-emitter topology reduces base resistance and minimizes flicker noise contribution |
| High linearity | OIP3 = 24.5 dBm at 1.8 GHz enables two-tone testing in DVB-T headend amplifiers without distortion |
| ESD-hardened design | Integrated 1 kV HBM protection eliminates discrete TVS diodes and saves board space in LNB modules |
| Industrial qualification | AEC-Q101 and JEDEC JESD47 compliance ensures reliability in outdoor CATV infrastructure and automotive telematics |
Applications
| LNB Local Oscillator | CATV Broadband LNA |
|---|---|
Use Scenario: Low-phase-noise signal generation in satellite TV downconverters operating at 950–2150 MHz. IC Role / Device Role / Timing Role: NPN RF transistor configured as grounded-emitter oscillator core with integrated ESD protection. Use Value: NFmin = 0.9 dB and fT > 21 GHz enable stable oscillation with minimal close-in phase noise and low supply current. | Use Scenario: First-stage amplification in 5–1002 MHz CATV distribution amplifiers. IC Role / Device Role / Timing Role: Low-noise, high-gain active device in 50 Ω matched cascade with SAW filters and AGC stages. Use Value: OIP3 = 24.5 dBm prevents intermodulation distortion across 80+ QAM channels under full load. |
| DVB-T Tuner Front-End | FM/AM Radio Receiver LNA |
Use Scenario: Signal conditioning in terrestrial digital TV tuners receiving 470–862 MHz DVB-T signals. IC Role / Device Role / Timing Role: Single-transistor LNA stage with 2 V bias and 20 mA quiescent current. Use Value: Gms = 21.5 dB and CCB = 0.14 pF ensure wideband gain flatness and minimal group delay variation. | Use Scenario: High-selectivity front-end amplification in analog broadcast receivers covering 87.5–108 MHz FM and 526–1606 kHz AM bands. IC Role / Device Role / Timing Role: Dual-band LNA with external LC matching networks tuned for both bands. Use Value: hFE = 110 (typ.) and fT > 30 GHz allow stable gain control across two decades of frequency with single bias point. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP540ESDH6327XTSA1 | Identical SOT343 package, same NFmin (0.9 dB), but higher OIP3 (24.5 dBm vs. 23.5 dBm) and fT (21–30 GHz vs. 18–26 GHz) | Preferred for DVB-T headends requiring higher linearity; identical pinout and biasing | Select when OIP3 > 24 dBm is required at 1.8 GHz with no layout change |
| MRF581W1 | TO-92 package, lower fT (12 GHz), higher VCEO (12 V), no integrated ESD protection | Suitable for legacy AM/FM designs where board space is not constrained and external ESD protection is acceptable | Choose only if thermal budget allows TO-92 mounting and system-level ESD design is already implemented |
Compared with BFP540ESDH6327XTSA1, the BFP460H6327XTSA1 offers slightly lower OIP3 and fT but identical noise performance and ESD robustness; versus MRF581W1, it delivers superior high-frequency gain and eliminates external ESD components at the cost of higher assembly precision.
Availability
BFP460H6327XTSA1 is available at Aetrix Electronics and suitable for LNB modules, CATV distribution amplifiers, DVB-T tuners, and FM/AM radio receivers requiring stable component supply across industrial temperature ranges (−55 °C to +150 °C junction).
Supply support for BFP460H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The BFP460H6327XTSA1 belongs to Infineon's fifth-generation SIEGET™ RF bipolar transistor family, engineered specifically for low-noise, high-linearity amplification in consumer and industrial broadcast receiver front-ends.
FAQ
What is the maximum recommended collector-emitter voltage for continuous operation?
The absolute maximum VCEO is 4.5 V at TA = 25 °C with open base. For reliable long-term operation, Infineon specifies 3.5 V as the maximum recommended DC bias voltage to maintain hFE stability and prevent thermal runaway under varying ambient conditions.
Does this transistor require external ESD protection in PCB layout?
No. The BFP460H6327XTSA1 integrates on-die ESD protection rated to 1 kV HBM, validated per JEDEC JESD22-A114. External TVS diodes are unnecessary unless system-level ESD requirements exceed IEC 61000-4-2 Level 4 (8 kV contact).
Can it be used in 5G sub-6 GHz infrastructure applications?
While its fT reaches 30 GHz, the BFP460H6327XTSA1 is characterized and qualified for 1.8–3 GHz operation with verified NFmin and OIP3 at those frequencies. It is not specified for 3.3–4.2 GHz 5G NR bands, and gain compression behavior above 3.5 GHz is not documented.
What is the thermal derating limit above 77 °C soldering point temperature?
Total power dissipation must be linearly derated above TS = 77 °C using RthJS = 290 K/W. At TS = 100 °C, Ptot must not exceed 172 mW; at TS = 125 °C, maximum allowable Ptot drops to 103 mW to maintain TJ ≤ 150 °C.
BFP460H6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Voltage - Collector Emitter Breakdown (Max):
- 5.8V
- Frequency - Transition:
- 22GHz
- Noise Figure (dB Typ @ f):
- 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
- Gain:
- 12.5dB ~ 26.5dB
- Power - Max:
- 230mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 90 @ 20mA, 3V
- Current - Collector (Ic) (Max):
- 70mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT343-3D
BFP460H6327XTSA1 FAQ
1.How can I place an order for BFP460H6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BFP460H6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BFP460H6327XTSA1 reliable?
The price and inventory of BFP460H6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP460H6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BFP460H6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP460H6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BFP460H6327XTSA1?
BFP460H6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BFP460H6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BFP460H6327XTSA1?
For technical support, including BFP460H6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP460H6327XTSA1 requirements.
6.How does Aetrix verify that BFP460H6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BFP460H6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP460H6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BFP460H6327XTSA1?
All BFP460H6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFP460H6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BFP460H6327XTSA1 part is unused and in its original packaging.
Return procedure for BFP460H6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BFP460H6327XTSA1 Tags
-
BFR182WH6327XTSA1
Infineon Technologies
-
BFR92PE6327HTSA1
Infineon Technologies
-
BFR360FH6327XTSA1
Infineon Technologies
-
BFR193FH6327XTSA1
Infineon Technologies
-
BFU550AR
NXP USA Inc.
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BFR460L3E6327XTMA1
Infineon Technologies
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MMBTH81
onsemi
-
BFU520WX
NXP USA Inc.
-
BFP840FESDH6327XTSA1
Infineon Technologies
-
BFP650H6327XTSA1
Infineon Technologies
-
BFU520AR
NXP USA Inc.
-
BFS483H6327XTSA1
Infineon Technologies
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