Infineon Technologies BFP460H6433XTMA1

Overview

BFP460H6433XTMA1 from Infineon Technologies is an NPN silicon RF transistor designed for low-noise, low-voltage amplifier stages in 1.8 GHz mobile front-ends. It delivers a minimum noise figure of 1.1 dB at 1.8 GHz (V_CE = 3 V, I_C = 5 mA), OP1dB of 13 dBm under same conditions, and f_T of 22 GHz (typ.), housed in a RoHS-compliant SOT343 package with visible leads.

For engineers reviewing the BFP460H6433XTMA1 datasheet, BFP460H6433XTMA1 pinout, BFP460H6433XTMA1 application, or BFP460H6433XTMA1 equivalent, key selection criteria include its 1.1 dB NF_min at 1.8 GHz, 13 dBm output compression, ESD robustness (1500 V HBM), SOT343 lead visibility, and AEC-Q101 qualification for automotive RF modules.

Technical Context

This device operates as a single-stage RF amplification element in narrowband and wideband receiver paths, optimized for bias stability at low collector-emitter voltages (1.5–4 V) and currents (3–35 mA). Its high f_T (22 GHz typ.) and low C_cb (0.32 pF typ.) support stable gain up to 3 GHz, while Z_Sopt-matched noise performance enables sensitive LNA design in GSM/UMTS bands.

The transistor exhibits strong linearity with IP3 of 27.5 dBm at 1.8 GHz and maintains consistent G_max (17.5 dB typ.) and |S₂₁|² (15 dB typ.) under 50 Ω terminations - critical for minimizing intermodulation distortion in multi-carrier cellular infrastructure and handset power amplifier driver stages.

Key Specifications

Pinout & Package

Package: SOT343 - surface-mount plastic package with visible leads, 1.2 mm × 1.2 mm footprint, 0.95 mm height, and thermal resistance R_thJS ≤ 250 K/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF transistor amplifier applications.

Compared with BFP460H6433XTMA1, BFP640FESD offers superior high-frequency gain but lacks automotive qualification, while MRF5812LSR3 trades noise performance for ruggedness and output power - making the BFP460 optimal for space-constrained, ESD-sensitive, AEC-Q101–mandated automotive RF receivers.

Availability

BFP460H6433XTMA1 is available at Aetrix Electronics and suitable for GPS/GNSS receivers, automotive telematics modules, GSM/UMTS handset front-ends, and industrial ISM-band sensor hubs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BFP460H6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and RF solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The BFP460 belongs to Infineon's BFP family of silicon RF transistors engineered specifically for low-noise, low-voltage amplifier applications in automotive, mobile communications, and industrial wireless systems - emphasizing ESD robustness, thermal stability, and AEC-Q101 compliance.

FAQ

What is the recommended bias condition for minimum noise figure at 1.8 GHz?

For minimum noise figure of 1.1 dB at 1.8 GHz, bias the BFP460H6433XTMA1 at V_CE = 3 V and I_C = 5 mA with source impedance matched to Z_Sopt ≈ 25 + j15 Ω. This condition is verified per Infineon's Application Note AN205 and requires a 3-element L-network for 50 Ω system interface.

Does the SOT343 package support reflow soldering per JEDEC J-STD-020?

Yes - the BFP460H6433XTMA1's Pb-free SOT343 package is rated MSL1 per JEDEC J-STD-020, allowing unlimited floor life and compatibility with standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C) without preconditioning or dry-pack requirements.

Can this transistor be used in common-base configuration for broadband amplification?

Yes - the BFP460H6433XTMA1 supports common-base operation with verified |S₁₂| < −25 dB up to 3 GHz, enabling stable wideband amplification from 100 MHz to 2.5 GHz. Input return loss exceeds 12 dB across this range when terminated in 50 Ω, per measured S-parameter data in Infineon's RF Transistor Databook Rev. 2.1.

Is SPICE modeling supported, and where can the model be obtained?

Yes - Infineon provides a validated SPICE model for BFP460H6433XTMA1 in MWO and ADS formats, including DC, AC, noise, and S-parameter behavior. The latest version is downloadable from www.infineon.com/rf.models under "BFP460" - models reflect typical device characteristics and have been verified against on-wafer measurements at 25°C and 85°C.