Infineon Technologies BFP490E6327

Overview

BFP490E6327 from Infineon Technologies is an NPN silicon RF transistor optimized for low-noise amplification up to 5 GHz, featuring 12 dB gain at 1.8 GHz, 1.1 dB noise figure at 1.8 GHz, and 15 V collector-emitter voltage rating; used in GSM/UMTS/LTE front-end receiver modules.

For engineers reviewing the BFP490E6327 datasheet, BFP490E6327 pinout, BFP490E6327 application, or BFP490E6327 equivalent, key selection criteria include noise figure vs. frequency, gain flatness across band, bias stability under temperature variation, and S-parameter matching for 50 Ω systems.

Technical Context

This device employs a planar epitaxial base structure with gold metallization for high-frequency reliability. Its f_T of 25 GHz and f_max of 45 GHz support wideband operation in sub-6 GHz wireless infrastructure and mobile handsets.

Designed for common-emitter configuration with fixed bias, it delivers linear small-signal performance without integrated matching networks-requiring external input/output impedance tuning per application frequency.

Key Specifications

Pinout & Package

Package: SOT-343 (SC-82AB), 4-pin plastic surface-mount package with exposed emitter pad for thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFP490E6327, BFP640FESD trades 0.2 dB NF for 20 GHz higher f_max, while MMA040707-12 sacrifices 0.3 dB NF to deliver +2 dBm P_1dB-making each optimal for distinct RF linearity vs. sensitivity trade-offs.

Availability

BFP490E6327 is available at Aetrix Electronics and suitable for GSM/UMTS/LTE receiver design, 5G sub-6 GHz test instrumentation, and ISM-band wireless sensor nodes requiring stable component supply and consistent RF performance across production batches.

Supply support for BFP490E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

BFP490E6327 belongs to Infineon's BFP family of discrete RF transistors, engineered specifically for high-gain, low-noise amplification in cellular and wireless infrastructure applications up to 6 GHz.

FAQ

What is the recommended DC bias condition for optimal noise figure at 1.8 GHz?

Optimal noise figure of 1.1 dB is achieved at V_CE = 5 V, I_C = 10 mA, with base bias set via 10 kΩ resistor to V_BB = 1.2 V. This condition balances thermal stability and RF performance; deviations beyond ±1 mA I_C increase NF by ≥0.15 dB due to base resistance modulation.

Does BFP490E6327 require external matching networks for 50 Ω system integration?

Yes-BFP490E6327 has non-50 Ω S-parameters: S11 = 0.75∠–120° and S22 = 0.62∠110° at 1.8 GHz. External LC matching networks are mandatory on both input and output to achieve >15 dB return loss and maximize gain; typical designs use series-shunt topology with 1–3 nH inductors and 0.5–2 pF capacitors.

Is the SOT-343 package lead-free and RoHS compliant?

Yes-BFP490E6327 uses lead-free solderable terminations and complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The package contains no intentionally added lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE, and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1).

Can BFP490E6327 be operated in common-base configuration?

Yes-BFP490E6327 supports common-base operation with verified S-parameters up to 3 GHz. In this mode, it achieves 10 dB higher reverse isolation (>45 dB) and improved high-frequency stability, though gain drops to 8 dB at 1.8 GHz and noise figure rises to 1.8 dB; bias must be reconfigured with grounded base and AC-coupled emitter.