Infineon Technologies BFP540H6327XTSA1

Overview

BFP540H6327XTSA1 from Infineon is a silicon NPN RF bipolar transistor in SOT343 package, designed for low-noise amplification at 1.8 GHz with NFmin = 0.9 dB, Gms = 21.5 dB, OIP3 = 24.5 dBm, and 1 kV HBM ESD robustness. It serves as the active gain element in broadband LNA stages for DVB-T and FM/AM radio front-ends.

For engineers reviewing the BFP540H6327XTSA1 datasheet, BFP540H6327XTSA1 pinout, BFP540H6327XTSA1 application, or BFP540H6327XTSA1 equivalent, key selection criteria include noise figure at 5 mA bias, transducer gain at 20 mA, OIP3 linearity, ESD rating, and SOT343 thermal resistance (RthJS = 290 K/W).

Technical Context

This grounded-emitter SIEGET™ transistor operates in common-emitter configuration with DC bias-dependent RF performance: fT reaches 30 GHz at IC = 50 mA, while CCB = 0.14–0.24 pF and CEB = 0.59 pF define its high-frequency impedance matching behavior. Its 4.5 V VCEO rating supports operation in low-voltage RF signal chains.

The device is qualified per JEDEC JESD47/JESD22 and AEC-Q101 for industrial environments, with thermal derating defined by Ptot = 250 mW at TS ≤ 77 °C and RthJS = 290 K/W. Pulse operation follows Figure 2/3 derating curves for duty cycle and pulse width.

Key Specifications

Pinout & Package

SOT343 plastic surface-mount package with 4-pin configuration: compact 2.1 × 2.0 × 0.95 mm footprint, lead-free, RoHS-compliant, and optimized for 50 Ω microstrip matching on FR4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF bipolar transistor applications.

Compared with BFP640H6327XTSA1 and MMA040707-12, the BFP540H6327XTSA1 offers optimal balance of ultra-low noise (0.9 dB), high linearity (24.5 dBm OIP3), and industrial qualification - making it preferred for cost-sensitive, thermally constrained DVB-T and LNB applications where 30 GHz fT suffices.

Availability

BFP540H6327XTSA1 is available at Aetrix Electronics and suitable for FM/AM radio receivers, DVB-T tuners, satellite LNB modules, and cordless phone RF front-ends requiring stable component supply across production lifecycles.

Supply support for BFP540H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, industrial, and RF solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BFP540H6327XTSA1 belongs to Infineon's fifth-generation SIEGET™ RF bipolar transistor family, engineered specifically for broadband low-noise amplification in consumer and industrial wireless infrastructure where ESD robustness and thermal efficiency are critical.

FAQ

What is the recommended bias condition for minimum noise figure?

The BFP540H6327XTSA1 achieves NFmin = 0.9 dB at VCE = 2 V, IC = 5 mA, with base bias set via resistive divider to maintain stable DC operating point. This condition requires emitter degeneration resistor < 10 Ω to preserve noise performance, and source impedance must be tuned to Γopt = 0.25∠145° per datasheet Figure 12.

Can this transistor be used in 5 V supply applications?

No - the absolute maximum VCEO is 4.5 V with open base, and recommended operating VCE is 2 V. Using 5 V violates absolute maximum ratings and risks junction breakdown. For 5 V systems, use a series resistor or LDO to reduce collector voltage to ≤2 V while maintaining 20 mA IC for gain-critical stages.

Is the SOT343 package lead-free and RoHS compliant?

Yes - the BFP540H6327XTSA1 uses lead-free matte tin plating on copper alloy leads and complies with EU RoHS Directive 2011/65/EU and China RoHS GB/T 26572-2011. The package meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30 °C/60% RH.

How does the dual-emitter pin configuration improve thermal performance?

The two emitter terminals (Pins 2 and 4) provide parallel current paths and doubled thermal conduction area to the PCB ground plane, reducing effective junction-to-solder-point thermal resistance from ~350 K/W (single-emitter) to 290 K/W. This allows full 250 mW power dissipation at lower board temperature rise.