Infineon Technologies BFP620E7764BTSA1
- Part No.:
- BFP620E7764BTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bipolar RF Transistors
- Package:
- SC-82A, SOT-343
- Datasheet:
-
BFP620E7764BTSA1.pdf
- Description:
- RF TRANS NPN 2.8V 65GHZ SOT343-4
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BFP620E7764BTSA1 from Infineon is an NPN silicon-germanium (SiGe:C) RF transistor optimized for low-voltage, high-linearity wireless front-end amplification. It delivers 14.5 dBm OP1dB output power at 1.8 GHz, 0.7 dB NFmin at 1.8 GHz, and 21.5 dB maximum stable gain (Gms) at 1.8 GHz in a SOT343 package-ideal for CDMA and WLAN receiver LNA stages.
For engineers reviewing the BFP620E7764BTSA1 datasheet, BFP620E7764BTSA1 pinout, BFP620E7764BTSA1 application, or BFP620E7764BTSA1 equivalent, key selection criteria include its 65 GHz fT, 0.12 pF Ccb, AEC-Q101 qualification, RoHS-compliant SOT343 footprint, and verified SPICE GP model supporting DC-to-10 GHz simulation.
Technical Context
This SiGe:C transistor uses heterojunction bipolar technology to achieve high fT (65 GHz typ.) and ultra-low noise performance while maintaining robust linearity under low VCE (1.5–2.3 V). Its Gummel-Poon SPICE model includes package parasitics and is validated up to 10 GHz for accurate AC, noise, and intermodulation prediction.
The device operates with ZS = ZSopt for minimum noise and ZL = ZLopt for maximum gain, supporting matched 50 Ω system design. Its ESD-sensitive classification (HBM Class 2) and AEC-Q101 qualification confirm suitability for automotive-grade RF modules requiring reliability under thermal cycling and vibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| fT | 65 GHz typical - enables stable amplification up to 6 GHz with margin for layout parasitics |
| NFmin | 0.7 dB at 1.8 GHz - ensures high sensitivity in sub-2 GHz receiver front ends |
| Gms | 21.5 dB at 1.8 GHz - provides sufficient gain for single-stage LNA designs without cascading |
| OP1dB | 14.5 dBm at 1.8 GHz - supports linear operation with CDMA/WLAN signal peaks |
| Ccb | 0.12 pF typical at 2 V - minimizes Miller effect and improves stability in common-emitter configurations |
| VCEO | 2.3 V at TA > 0°C - defines safe DC bias ceiling for low-voltage 1.8–2.3 V supply rails |
| hFE | 110–270 at IC = 50 mA - ensures consistent current drive across process variation |
Pinout & Package
Package: SOT343 (3-pin variant with dual emitter leads), surface-mount, lead-free, RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base (B) | Control electrode for current injection; requires DC bias network and RF matching |
| 2 | Emitter (E) | Common reference node; dual emitter pins (2 & 4) reduce lead inductance for RF grounding |
| 3 | Collector (C) | RF output node; connects to matching network and supply decoupling |
| 4 | Emitter (E) | Second emitter terminal for low-inductance RF return path; must be tied to same ground potential as Pin 2 |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive RF modules including temperature cycling, mechanical shock, and ESD robustness |
| SPICE GP model with package parasitics | Enables accurate pre-layout simulation of DC bias, S-parameters, noise figure, and IP3 up to 10 GHz |
| Dual emitter terminals (Pins 2 & 4) | Reduces effective emitter inductance by ~50%, improving high-frequency gain and stability |
| 0.7 dB NFmin at 1.8 GHz | Directly enables < −110 dBm receiver sensitivity in 20 MHz WLAN channels |
| RoHS-compliant SOT343 | Compatible with lead-free reflow profiles (peak 260°C) and automated optical inspection |
Applications
| CDMA Cellular Receiver LNA | WLAN 2.4 GHz Front-End Amplifier |
|---|---|
Use Scenario: Low-noise amplification of 824–894 MHz CDMA signals in handset transceivers with 1.8 V supply. IC Role / Device Role / Timing Role: First-stage LNA with matched input impedance and minimal added noise before downconversion. Use Value: 0.7 dB NFmin and 21.5 dB Gms enable >15 dB noise figure margin over system requirement at 850 MHz. | Use Scenario: High-linearity receive-path amplification in IEEE 802.11b/g access point RF modules. IC Role / Device Role / Timing Role: Single-transistor LNA operating at 2.4 GHz with 50 Ω input/output matching. Use Value: 14.5 dBm OP1dB prevents compression from adjacent-channel interference in dense 2.4 GHz ISM band environments. |
| Automotive Telematics GNSS Front-End | ISM Band Sensor Transceiver LNA |
Use Scenario: GPS/GNSS LNA stage in AEC-Q101-compliant telematics control units operating at −40°C to +105°C ambient. IC Role / Device Role / Timing Role: Cold-temperature-stable LNA with low VCEO derating and validated junction temperature margin. Use Value: AEC-Q101 qualification and 150°C TJ rating ensure uninterrupted operation during engine-bay thermal transients. | Use Scenario: Sub-GHz sensor node receiver (e.g., 868/915 MHz) in industrial IoT gateways requiring low power and high dynamic range. IC Role / Device Role / Timing Role: Battery-powered LNA biased at IC = 5 mA for 0.7 dB NFmin and <1 mW quiescent dissipation. Use Value: 1.3 dB NFmin at 6 GHz and 65 GHz fT support future multi-band firmware upgrades without hardware change. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN SiGe RF transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BFP640FESD | Higher fT (75 GHz), lower Ccb (0.09 pF), but higher NFmin (0.9 dB @ 1.8 GHz) | Better for >3 GHz wideband amplifiers; less optimal for ultra-low-noise sub-2 GHz receivers | Select when bandwidth >4 GHz and noise margin >0.2 dB is acceptable |
| NE85633 | Lower fT (30 GHz), higher VCEO (3.5 V), no AEC-Q101 qualification | Suitable for cost-sensitive consumer WLAN, not automotive or industrial harsh environments | Select only for non-automotive, non-temperature-critical 2.4 GHz applications |
Compared with BFP620E7764BTSA1, BFP640FESD trades 0.2 dB noise penalty for 10 GHz fT headroom, while NE85633 sacrifices AEC-Q101 compliance and high-frequency gain for lower cost and higher voltage tolerance.
Availability
BFP620E7764BTSA1 is available at Aetrix Electronics and suitable for CDMA cellular receivers, WLAN 2.4 GHz front-ends, automotive GNSS modules, and ISM-band sensor transceivers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BFP620E7764BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and RF solutions, with global R&D and manufacturing infrastructure.
The BFP620 belongs to Infineon's SiGe:C RF transistor product line, engineered specifically for high-performance, low-voltage wireless receiver front-ends in cellular, WLAN, and automotive telematics applications.
FAQ
What is the recommended DC bias condition for minimum noise figure?
At TA = 25°C, the minimum noise figure (0.7 dB at 1.8 GHz) is achieved with IC = 5 mA, VCE = 1.5 V, and source impedance matched to ZSopt (typically 15 + j10 Ω). Biasing above 5 mA increases noise; below 2 mA degrades gain flatness. The dual-emitter configuration requires both Pins 2 and 4 to be grounded through low-inductance paths.
Is the BFP620E7764BTSA1 pin-compatible with other SOT343 RF transistors?
No-BFP620E7764BTSA1 uses a proprietary SOT343 pinout (1=B, 2=E, 3=C, 4=E) that differs from standard SOT343 logic ICs or MOSFETs. Its dual-emitter layout is specific to RF optimization and requires PCB footprint verification against Infineon's mechanical drawing PG-SOT343-4. Pin compatibility cannot be assumed even with same package code.
Does the SPICE GP model include thermal effects or self-heating behavior?
The official Infineon SPICE GP model includes extracted DC and RF parameters up to 10 GHz but does not model dynamic thermal coupling or junction temperature rise during pulsed operation. For thermal analysis, users must combine the model with external thermal networks using RthJS ≤ 300 K/W and Ptot = 185 mW at TS ≤ 95°C per the datasheet derating curves.
How does AEC-Q101 qualification impact board-level reliability testing?
AEC-Q101 qualification confirms the BFP620E7764BTSA1 passes accelerated stress tests including HTSL (1000 hrs at 150°C), TC (1000 cycles −40°C to +125°C), and ESD (HBM ≥2 kV). This eliminates need for duplicate board-level thermal cycling or HBM validation-reducing qualification time by ~6 weeks for automotive Tier 1 suppliers implementing GNSS or V2X modules.
BFP620E7764BTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-82A, SOT-343
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Voltage - Collector Emitter Breakdown (Max):
- 2.8V
- Frequency - Transition:
- 65GHz
- Noise Figure (dB Typ @ f):
- 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
- Gain:
- 21.5dB
- Power - Max:
- 185mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 110 @ 50mA, 1.5V
- Current - Collector (Ic) (Max):
- 80mA
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT343-3D
BFP620E7764BTSA1 FAQ
1.How can I place an order for BFP620E7764BTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BFP620E7764BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BFP620E7764BTSA1 reliable?
The price and inventory of BFP620E7764BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP620E7764BTSA1 is usually 5 days.
3.What payment methods are accepted for BFP620E7764BTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP620E7764BTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BFP620E7764BTSA1?
BFP620E7764BTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BFP620E7764BTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BFP620E7764BTSA1?
For technical support, including BFP620E7764BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP620E7764BTSA1 requirements.
6.How does Aetrix verify that BFP620E7764BTSA1 is sourced from the original manufacturer or authorized distributors?
All BFP620E7764BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP620E7764BTSA1 meets industry standards.
7.What is the process for return or replacement of BFP620E7764BTSA1?
All BFP620E7764BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BFP620E7764BTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BFP620E7764BTSA1 part is unused and in its original packaging.
Return procedure for BFP620E7764BTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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