Infineon Technologies BFP620H7764XTSA1

Overview

BFP620H7764XTSA1 from Infineon is a silicon NPN RF bipolar transistor in SOT343 package, designed for low-noise amplification at 1.8 GHz with NFmin = 0.9 dB, Gms = 21.5 dB, and OIP3 = 24.5 dBm under 2 V / 20 mA bias; used in LNB local oscillators and broadband CATV/DVB-T LNAs.

For engineers reviewing the BFP620H7764XTSA1 datasheet, BFP620H7764XTSA1 pinout, BFP620H7764XTSA1 application, or BFP620H7764XTSA1 equivalent, key selection criteria include noise figure at 1.8 GHz, ESD robustness (1 kV HBM), transition frequency (fT = 21–30 GHz), DC current gain (hFE = 50–170), and thermal resistance (RthJS = 290 K/W).

Technical Context

This grounded-emitter SIEGET™ RF transistor operates with VCE = 2 V and IC up to 20 mA for optimal noise and gain performance at 1.8 GHz. Its fT of 21–30 GHz supports operation into UHF and low microwave bands, while CCB = 0.14–0.24 pF and CEB = 0.59 pF define high-frequency impedance matching requirements.

The device features integrated ESD protection (1 kV HBM typical) without degrading RF performance, and is qualified per JEDEC JESD47/JESD22 and AEC-Q101 for industrial and automotive-grade reliability. Thermal design must respect RthJS = 290 K/W and Ptot ≤ 250 mW at TS ≤ 77 °C.

Key Specifications

Pinout & Package

SOT343 surface-mount plastic package with 4 terminals: 1 mm × 1 mm footprint, 0.95 mm height, lead pitch 0.65 mm, and exposed emitter pad for thermal and RF grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF bipolar transistor applications.

Compared with BFP620H7764XTSA1, BFP540ESDH6327XTSA1 offers identical RF performance and reliability in the same package, while BFP640H6327XTSA1 trades 0.2 dB higher noise for +1.5 dB OIP3 and +2 GHz fT-making it preferable for driver or IF amplifier roles where gain flatness and distortion headroom outweigh minimum noise.

Availability

BFP620H7764XTSA1 is available at Aetrix Electronics and suitable for LNB local oscillators, CATV broadband LNAs, and DVB-T tuner front-ends requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for BFP620H7764XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BFP620H7764XTSA1 belongs to Infineon's fifth-generation SIEGET™ RF bipolar transistor family, engineered specifically for cost-sensitive, high-volume RF front-ends demanding simultaneous low noise, high gain, and robust ESD tolerance.

FAQ

What is the maximum recommended collector current for continuous operation?

The absolute maximum collector current is 80 mA, but for reliable continuous operation at TA = 25 °C, IC must be limited to 20 mA to maintain specified NFmin = 0.9 dB and avoid thermal runaway. At higher currents, fT increases but NF degrades beyond 1.4 dB and OIP3 saturates.

Can BFP620H7764XTSA1 replace BFP540ESD in existing designs?

Yes-BFP620H7764XTSA1 and BFP540ESDH6327XTSA1 share identical die, SOT343 package, pinout (B-E-C-E), and all electrical specifications per Infineon's Rev. 3.0 datasheet. The only differences are reel size and top-side marking; no layout or bias changes are required.

Is external ESD protection required despite the 1 kV HBM rating?

No external ESD protection is required during board assembly or normal operation. The integrated structure meets 1 kV HBM (JEDEC JS-001-2017) and is qualified per AEC-Q101. However, handling must follow ESD-safe protocols (wrist strap, grounded work surface) before soldering.

What is the recommended PCB layout practice for optimal RF performance?

Use coplanar microstrip with 50 Ω characteristic impedance; connect both emitter pins (Pins 2 and 4) directly to a solid ground plane via multiple vias; place DC blocking capacitors within 2 mm of base/collector; minimize trace length to <3 mm for RF paths; and isolate bias lines with ferrite beads to prevent supply noise injection.