Infineon Technologies BFP640FESDH6327XTSA1

Overview

BFP640FESDH6327XTSA1 from Infineon is a silicon NPN RF bipolar transistor in SOT343 package, designed for low-noise amplification at 1.8 GHz with NFmin = 0.9 dB, Gms = 21.5 dB, and OIP3 = 24.5 dBm under 2 V / 20 mA bias; used in LNB local oscillators and broadband CATV/DVB-T LNAs.

For engineers reviewing the BFP640FESDH6327XTSA1 datasheet, BFP640FESDH6327XTSA1 pinout, BFP640FESDH6327XTSA1 application, or BFP640FESDH6327XTSA1 equivalent, key selection criteria include noise figure at 1.8 GHz, ESD robustness (1 kV HBM), transition frequency (fT = 21–30 GHz), collector-emitter breakdown voltage (V(BR)CEO = 4.5 V), and SOT343 thermal resistance (RthJS = 290 K/W).

Technical Context

This grounded-emitter (SIEGET™) RF transistor operates in common-emitter configuration with emitter terminals on pins 2 and 4, enabling stable high-frequency gain and low-noise performance up to 3 GHz. Its internal ESD protection structure supports industrial and AEC-Q101-qualified applications without external clamping.

DC current gain hFE ranges 50–170 at VCE = 3.5 V / IC = 20 mA, while AC characteristics are specified with 50 Ω source/load terminations and Bias-T test fixtures. Capacitance values (CCB = 0.14–0.24 pF, CCE = 0.41 pF, CEB = 0.59 pF) reflect optimized layout for RF matching networks.

Key Specifications

Pinout & Package

SOT343 surface-mount plastic package with 4-pin lead frame, 0.65 mm pitch, and exposed thermal pad (not electrically connected). Dimensions: 2.1 × 2.0 × 0.95 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN RF bipolar transistor applications.

Compared with BFP640FESDH6327XTSA1, the BFP740FESDH6327XTSA1 offers 0.15 dB lower noise figure and 4 GHz higher fT but sacrifices 1 V of collector-emitter breakdown margin - making it suitable only where supply voltage is strictly regulated below 3.3 V.

Availability

BFP640FESDH6327XTSA1 is available at Aetrix Electronics and suitable for LNB local oscillator modules, CATV trunk amplifiers, DVB-T tuner front-ends, and FM/AM radio receiver designs requiring stable component supply across automotive, broadcast, and consumer electronics programs.

Supply support for BFP640FESDH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and qualification infrastructure.

The BFP640FESDH6327XTSA1 belongs to Infineon's fifth-generation SIEGET™ RF bipolar transistor family, engineered specifically for cost-sensitive, high-volume LNB and digital broadcast receiver applications demanding industrial-grade reliability and ESD robustness.

FAQ

What is the maximum DC collector current rating for BFP640FESDH6327XTSA1?

The absolute maximum collector current is 80 mA, per Infineon's datasheet Table 2. This rating applies at TA = 25 °C with open base and must be derated linearly above 25 °C ambient. At 77 °C soldering point temperature, the safe continuous IC drops to approximately 45 mA to maintain Ptot ≤ 250 mW and TJ ≤ 150 °C.

Can BFP640FESDH6327XTSA1 be used in 5G sub-6 GHz infrastructure?

No - while its fT reaches 30 GHz, the device is characterized and qualified only up to 3 GHz (per Table 7), and its OIP3 degrades to 19.2 dBm at 3.5 GHz. It lacks the harmonic suppression, thermal design, and AEC-Q101 extended temperature validation required for 5G base station PA driver stages.

Is the SOT343 package thermally enhanced?

Yes - the SOT343 package features an exposed copper thermal pad on the underside, which must be soldered to a minimum 10 mm² copper pour on the PCB to achieve the specified RthJS = 290 K/W. Without this thermal land, junction temperature rise exceeds specification limits even at 100 mW dissipation.

Does the dual-emitter configuration require separate grounding paths?

No - pins 2 and 4 are internally connected to the same emitter region and must be tied to the same RF ground plane with minimal trace length (<1 mm) and shared thermal pad connection. Separate grounding creates inductive imbalance that degrades gain flatness above 1 GHz and increases noise figure by up to 0.3 dB.