Infineon Technologies BFP650FH6327XTSA1

Overview

BFP650FH6327XTSA1 from Infineon is a silicon NPN RF bipolar transistor in SOT343 package, designed for low-noise amplification at 1.8 GHz with NFmin = 0.9 dB (2 V, 5 mA), Gms = 21.5 dB (2 V, 20 mA), and OIP3 = 24.5 dBm (2 V, 20 mA); used in LNB local oscillators and broadband CATV/DVB-T LNAs.

For engineers reviewing the BFP650FH6327XTSA1 datasheet, BFP650FH6327XTSA1 pinout, BFP650FH6327XTSA1 application, or BFP650FH6327XTSA1 equivalent, key selection criteria include noise figure at 1.8 GHz, ESD robustness (1 kV HBM), transducer gain stability across bias, and SOT343 thermal resistance (RthJS = 290 K/W).

Technical Context

This grounded-emitter (SIEGET™) RF transistor operates with VCE = 2 V and supports IC up to 20 mA for optimal small-signal linearity and gain flatness at 1.8 GHz. Its fT = 21–30 GHz enables stable operation into UHF bands, while CCB = 0.14–0.24 pF and CEB = 0.59 pF define input/output impedance matching constraints.

The device uses a monolithic silicon die with integrated ESD protection on all pins, qualified per JEDEC JESD47/JESD22 and AEC-Q101 for industrial environments. Biasing requires external DC blocking and RF choke networks due to its common-emitter configuration with dual emitter terminals.

Key Specifications

Pinout & Package

SOT343 plastic surface-mount package with 4-pin configuration: compact 2.1 × 2.0 × 0.95 mm footprint, lead-free, RoHS-compliant, and rated for reflow per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF bipolar transistor applications.

Compared with BFP540ESDH6327XTSA1 (identical performance), BFP650FH6327XTSA1 offers no functional distinction but may differ in lot traceability; versus NE85633, it delivers 2.2 dB better OIP3 and 0.2 dB lower NFmin-critical for high-channel-count CATV systems.

Availability

BFP650FH6327XTSA1 is available at Aetrix Electronics and suitable for satellite LNB designs, CATV distribution amplifiers, DVB-T tuner modules, and FM/AM radio receivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BFP650FH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BFP650FH6327XTSA1 belongs to Infineon's fifth-generation SIEGET™ RF bipolar transistor family, engineered specifically for high-linearity, low-noise amplification in consumer and industrial broadcast receiver front-ends.

FAQ

What is the maximum recommended collector current for continuous operation?

The absolute maximum collector current is 80 mA, but for reliable long-term operation at TA = 25 °C with TS ≤ 77 °C, the datasheet specifies 20 mA as the standard test condition for AC performance. Derating is required above 25 °C ambient per the Ptot = f(TS) curve in Figure 1.

Does BFP650FH6327XTSA1 require external neutralization for stability?

No. The SIEGET™ grounded-emitter architecture provides intrinsic stability up to 3 GHz without external neutralization components. Measured k-factor > 1 across 0.1–3 GHz confirms unconditional stability under standard 50 Ω source/load terminations.

Can this transistor be used in Class A power amplifier configurations?

It is not optimized for power amplification. With Ptot = 250 mW and IC max = 20 mA at VCE = 2 V, its design targets low-noise small-signal amplification-not RF power delivery. Use Infineon's BFP740 or BGA series for PA applications.

What is the significance of dual emitter terminals in SOT343?

The two emitter pins (Pin 2 and Pin 4) provide symmetrical grounding paths to minimize parasitic inductance and improve high-frequency stability. This reduces common-mode coupling in RF layout and enhances repeatability of noise figure and gain measurements across PCBs.