Infineon Technologies BFP720H6327XTSA1

Overview

BFP720H6327XTSA1 from Infineon Technologies is an NPN silicon bipolar RF transistor optimized for low-noise amplification up to 6 GHz, featuring a typical noise figure of 0.55 dB at 2 GHz, gain of 18.5 dB at 2 GHz, and output power of 14.5 dBm at 2 GHz with 1% EVM under LTE signal conditions. It operates from a 3.3 V supply and delivers high linearity in 5G FR1 front-end modules.

For engineers reviewing the BFP720H6327XTSA1 datasheet, BFP720H6327XTSA1 pinout, BFP720H6327XTSA1 application, or BFP720H6327XTSA1 equivalent, key selection criteria include its guaranteed f_T ≥ 45 GHz, S-parameters validated to 6 GHz, thermal resistance R_thJA = 220 K/W in SOT-343 package, and suitability for wideband LNA designs requiring < 0.6 dB NF below 3 GHz.

Technical Context

This transistor employs a high-speed Si bipolar process with epitaxial base and gold-metallized emitter, enabling stable small-signal gain across 0.1–6 GHz. Its f_max exceeds 70 GHz, supporting broadband matching networks without peaking compensation.

The device is characterized with DC bias (V_CE = 3.3 V, I_C = 10 mA), and S-parameter data provided per JEDEC JESD-78 test conditions. It supports Class-A operation with defined stability factors (K > 1, Δ < 1) across full frequency range.

Key Specifications

Pinout & Package

Supplied in SOT-343 (SC-88) plastic surface-mount package with 3 active terminals and 1 exposed thermal pad (pin 4). Package dimensions: 2.1 × 2.0 × 0.95 mm, lead pitch 0.65 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise RF transistor applications.

Compared with BFP640FESD and MMA041107, the BFP720H6327XTSA1 offers the best noise-performance trade-off for 5G UE and Wi-Fi 6E client LNAs, balancing ultra-low NF, adequate gain, and proven stability without requiring external ESD components.

Availability

BFP720H6327XTSA1 is available at Aetrix Electronics and suitable for 5G mobile devices, Wi-Fi 6E client equipment, and automotive V2X receivers requiring stable component supply with full traceability and no obsolescence risk through 2030.

Supply support for BFP720H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and RF solutions for automotive, industrial, and communications markets.

BFP720H6327XTSA1 belongs to Infineon's BFP family of high-frequency bipolar transistors, engineered specifically for low-noise, high-linearity RF amplification in sub-6 GHz wireless infrastructure and terminal equipment.

FAQ

What is the recommended DC bias condition for optimal noise figure?

The BFP720H6327XTSA1 achieves its specified 0.55 dB noise figure at V_CE = 3.3 V and I_C = 10 mA. Deviating from this point increases NF by ≥0.15 dB per ±2 mA change in collector current. Bias network must use RF chokes with ≥100 Ω impedance above 100 MHz to prevent signal leakage.

Can this transistor be used in push-pull configuration?

No - the BFP720H6327XTSA1 is a single-NPN device rated for Class-A operation only. Push-pull requires matched complementary pairs (NPN+PNP) with identical f_T, h_FE, and thermal characteristics, which are not offered in this series. Use discrete dual-transistor packages like BFP740F for balanced topologies.

Is the thermal pad (pin 4) electrically isolated?

No - the thermal pad is internally bonded to the emitter terminal and must be soldered to the PCB ground plane. It serves both thermal conduction and RF grounding functions. Floating or voltage-biased connection violates JEDEC MO-203-4 mechanical specification and degrades noise performance by >0.3 dB.

Does Infineon provide S-parameter files for this part?

Yes - ASCII Touchstone (.s2p) files covering 0.1–6 GHz are published on the official Infineon product page for BFP720H6327XTSA1, measured at V_CE = 3.3 V, I_C = 10 mA, and 25 °C ambient. Files include full covariance data for statistical EM simulation in ADS and Cadence AWR.