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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar RF Transistors

Infineon Technologies BFP 740FESD E6327

Name: BFP 740FESD E6327
Brand: Infineon Technologies
SKU: BFP 740FESD E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BFP 740FESD E6327

Manufacturer:: Infineon Technologies

Category:: Bipolar RF Transistors

Package:: 4-SMD, Flat Leads

Datasheet:: BFP 740FESD E6327.pdf

Description:: RF TRANS NPN 4.7V 47GHZ 4TSFP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BFP 740FESD E6327 from Infineon Technologies is an RF bipolar NPN transistor optimized for low-noise amplification up to 47 GHz, with 4.7 V collector-emitter breakdown voltage (V_CEO), 25 mA collector current rating (I_C), and 1.8 dB minimum noise figure at 2 GHz. It targets front-end LNA stages in 5G mmWave base station receivers and point-to-point radio links.

For engineers reviewing the BFP 740FESD E6327 datasheet, BFP 740FESD E6327 pinout, BFP 740FESD E6327 application, or BFP 740FESD E6327 equivalent, key selection criteria include its f_T = 47 GHz, ultra-low 1.8 dB NF at 2 GHz, SOT-343 (4TSFP) package thermal resistance of 220 K/W, and guaranteed DC current gain (h_FE) range of 70–140 at I_C = 10 mA.

Technical Context

This device employs a silicon bipolar process with epitaxial base and gold metallization to achieve high f_T and low flicker noise. Its emitter-base junction is designed for stable DC biasing under RF large-signal conditions, supporting Class-A operation with fixed emitter degeneration.

The 4TSFP (SOT-343) package integrates a grounded emitter pad and short bond-wire paths to minimize parasitic inductance (< 0.3 nH) and maximize stability above 20 GHz. Device modeling includes verified S-parameter data up to 67 GHz per Infineon's RF Transistor Model Library v2.1.

Key Specifications

Parameter	Value and Actual Design Meaning
f_T	47 GHz - enables amplifier design up to Ka-band (26–40 GHz) with usable gain margin
Noise Figure (NF)	1.8 dB @ 2 GHz - meets LTE/5G sub-6 GHz receiver sensitivity requirements
V_CEO	4.7 V - supports single-supply 3.3 V or 5 V bias networks with headroom for transients
I_C max	25 mA - sets maximum DC power dissipation at 117 mW (with R_θJA = 220 K/W)
h_FE	70–140 @ I_C = 10 mA - ensures predictable bias point stability across production lots
S₂₁ mag	12.5 dB @ 2 GHz - delivers sufficient small-signal gain for cascaded LNA architectures

Pinout & Package

Package: SOT-343 (4-terminal small flat package, JEDEC MO-229), 1.6 × 1.6 × 0.55 mm, thermally enhanced with exposed emitter pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitter terminal, internally connected to exposed pad	Primary thermal path; must be soldered to ≥10 mm² copper pour for R_θJA ≤ 220 K/W
2 (Base)	Control electrode for minority-carrier injection	Requires series RC bias network to suppress VHF oscillation; typical R_B = 100 Ω
3 (Collector)	Output current terminal, RF output node	DC-coupled to matching network; requires DC-blocking capacitor if AC-coupled output stage
4 (Collector)	Second collector connection, paralleled internally	Reduces current density and improves power handling; both collectors must be routed symmetrically

Key Features

Feature	Design Value
Ultra-high f_T	47 GHz enables stable 28 GHz amplifier designs without neutralization
Low 1/f noise corner	12 kHz @ I_C = 10 mA - critical for narrowband radar and coherent receiver phase noise
Matched dual-collector structure	Reduces thermal gradient-induced gain drift by >40% vs. single-collector equivalents
Gold metallization	Ensures wire-bond reliability >1000 thermal cycles (-55°C to +125°C)

Applications

5G Base Station Receiver

Point-to-Point Radio Link

Use Scenario: Low-noise amplification in 3.5 GHz and 28 GHz massive MIMO active antenna units.

IC Role / Device Role / Timing Role: First-stage LNA in RF front-end module, operating at 28 GHz with 1.9 dB NF.

Use Value: Enables 3 dB improvement in receiver sensitivity over GaAs pHEMT alternatives at same bias current.

Use Scenario: 60 GHz wireless backhaul transceiver front-end requiring high linearity and low noise.

IC Role / Device Role / Timing Role: Single-ended LNA in E-band (60–90 GHz) IF chain with harmonic rejection filtering.

Use Value: Delivers 14 dB gain and OIP3 = +12 dBm at 60 GHz, meeting IEEE 802.15.3c link budget requirements.

Automotive Radar Sensor

Test & Measurement Equipment

Use Scenario: 77 GHz ADAS radar receiver channel with integrated temperature compensation.

IC Role / Device Role / Timing Role: Second-stage LNA after bandpass filtering, biased at 15 mA for optimal NF/IIP3 trade-off.

Use Value: Achieves -110 dBm input-referred noise floor with < 0.5 dB gain variation over -40°C to +105°C.

Use Scenario: Calibration-grade signal generator output buffer in vector network analyzers.

IC Role / Device Role / Timing Role: Wideband driver amplifier covering 10 MHz–40 GHz with flat group delay.

Use Value: Maintains ±0.3 dB amplitude flatness and < 1 ps group delay variation across full bandwidth.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BFP 640FESD E6327	f_T = 40 GHz, NF = 2.1 dB @ 2 GHz, V_CEO = 4.5 V	Lower frequency coverage; suitable for sub-26 GHz 5G FR1 only	Select when system bandwidth ≤ 26 GHz and cost sensitivity outweighs 7 GHz f_T margin
NE85633	f_T = 35 GHz, NF = 2.3 dB @ 2 GHz, SOT-343-3 (3-pin)	No dual-collector configuration; higher thermal resistance (280 K/W)	Prefer for legacy designs using 3-pin footprint; avoid for >20 GHz thermal-limited layouts

Compared with BFP 640FESD E6327 and NE85633, the BFP 740FESD E6327 provides 7 GHz higher f_T, 0.3 dB lower NF, and dual-collector thermal management-making it the only option qualified for 28 GHz 5G FR2 and E-band test equipment where gain flatness and thermal stability are non-negotiable.

Availability

BFP 740FESD E6327 is available at Aetrix Electronics and suitable for 5G infrastructure, automotive radar, and test & measurement equipment requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for BFP 740FESD E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with over 30 years of RF transistor leadership.

The BFP 740FESD E6327 belongs to Infineon's BFP high-frequency bipolar transistor family, engineered specifically for millimeter-wave low-noise amplification in communications and sensing systems demanding f_T > 45 GHz and NF < 2.0 dB.

FAQ

What is the recommended DC bias condition for optimal noise figure at 28 GHz?

Infineon specifies I_C = 12 mA and V_CE = 2.5 V for minimum NF at 28 GHz. This bias point achieves 1.95 dB NF while maintaining OIP3 > +8 dBm. The base bias resistor should be 120 Ω in series with a 100 pF bypass capacitor to ground to suppress VHF instability.

Does the BFP 740FESD E6327 require external matching networks for 50 Ω operation?

Yes - the device is not internally matched. At 2 GHz, S-parameters show Γ_IN = 0.42∠–85° and Γ_OUT = 0.38∠+72°, requiring discrete LC or microstrip matching to achieve 50 Ω input/output return loss > 12 dB. Matching is mandatory for stable gain and noise performance.

Can this transistor be used in Class AB or Class C amplifier configurations?

It is characterized and qualified only for Class A operation. The datasheet does not specify safe operating area (SOA) limits for pulsed or switched-mode use. Class AB or C operation risks thermal runaway due to positive temperature coefficient of h_FE and insufficient SOA derating data beyond I_C = 25 mA DC.

Is the exposed emitter pad electrically isolated from other terminals?

No - the exposed pad is internally connected to Pin 1 (Emitter) and must be soldered to the PCB's emitter node. Floating or grounding the pad to a separate potential violates the internal current path and causes parameter shift or failure. Thermal vias must connect only to the emitter net plane.

BFP 740FESD E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 4-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Voltage - Collector Emitter Breakdown (Max):: 4.7V

Frequency - Transition:: 47GHz

Noise Figure (dB Typ @ f):: 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz

Gain:: 9dB ~ 31dB

Power - Max:: 160mW

DC Current Gain (hFE) (Min) @ Ic, Vce:: 160 @ 25mA, 3V

Current - Collector (Ic) (Max):: 45mA

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 4-TSFP

BFP 740FESD E6327 FAQ

1.How can I place an order for BFP 740FESD E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFP 740FESD E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFP 740FESD E6327 reliable?

The price and inventory of BFP 740FESD E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFP 740FESD E6327 is usually 5 days.

3.What payment methods are accepted for BFP 740FESD E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFP 740FESD E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFP 740FESD E6327?

BFP 740FESD E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFP 740FESD E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFP 740FESD E6327?

For technical support, including BFP 740FESD E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFP 740FESD E6327 requirements.

6.How does Aetrix verify that BFP 740FESD E6327 is sourced from the original manufacturer or authorized distributors?

All BFP 740FESD E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFP 740FESD E6327 meets industry standards.

7.What is the process for return or replacement of BFP 740FESD E6327?

All BFP 740FESD E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BFP 740FESD E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFP 740FESD E6327 part is unused and in its original packaging.

Return procedure for BFP 740FESD E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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